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Toshiba Semiconductor and Storage HN1B04FE-GR,LF
- Part No.:
- HN1B04FE-GR,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
HN1B04FE-GR,LF.pdf
- Description:
- TRANS NPN/PNP 50V 150MA ES6
- Quantity:
- Payment:
- Shipping:
Inventory:3,760
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Product details
Overview
HN1B04FE-GR,LF from Toshiba Electronic Devices & Storage Corporation is a dual bipolar transistor array comprising one PNP and one NPN silicon epitaxial transistor in a single ES6 package. It delivers VCEO = ±50 V, IC(max) = ±150 mA, hFE = 200–400 (GR grade), fT = 80 MHz (typ.), and VCE(sat) = 0.25 V / –0.3 V at rated currents - enabling compact low-frequency amplifier stages in space-constrained automotive and industrial signal conditioning circuits.
For engineers reviewing the HN1B04FE-GR,LF datasheet, HN1B04FE-GR,LF pinout, HN1B04FE-GR,LF application, or HN1B04FE-GR,LF equivalent, key selection considerations include its AEC-Q101 qualification for automotive use, matched hFE linearity (0.95 typ.), dual-transistor integration reducing board area, and GR-grade hFE binning for consistent gain control in analog front-ends.
Technical Context
The HN1B04FE-GR,LF integrates complementary PNP and NPN transistors with identical absolute maximum ratings (±50 V VCEO, ±150 mA IC, 100 mW PC) and tightly correlated electrical characteristics - including symmetric hFE range (200–400), saturation voltage magnitude (0.25 V / –0.3 V), and transition frequency (80 MHz typ.). This symmetry supports balanced push-pull or differential pair configurations without external matching components.
Its ES6 package features six terminals with fixed internal assignment: pins 1/2/6 serve Q1 (NPN: E1/B1/C1), and pins 4/5/3 serve Q2 (PNP: E2/B2/C2). The device operates across –55 °C to +150 °C junction temperature and meets AEC-Q101 stress test requirements for automotive under-hood applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | ±50 V - supports rail-to-rail operation in ±12 V to ±24 V analog supply domains |
| IC(max) | ±150 mA - enables driver-stage current capability for small-signal relays and LED loads |
| hFE | 200–400 (GR grade) - ensures predictable DC biasing and gain stability in linear amplifiers |
| VCE(sat) | 0.25 V / –0.3 V @ IC=±100 mA - minimizes conduction loss in switching and Class-A output stages |
| fT | 80 MHz (typ.) - sustains stable gain up to low-frequency audio and sensor signal bandwidths (≤20 kHz) |
| Cob | 2.5 pF @ VCB=±10 V - limits Miller capacitance impact on high-frequency stability in common-emitter designs |
| PC | 100 mW (total) - defines thermal derating envelope for continuous operation at Ta ≤ 85 °C |
Pinout & Package
HN1B04FE-GR,LF uses the ES6 surface-mount package (3.0 mg typ., 1.6 × 2.8 × 1.1 mm), optimized for automated placement and reflow compatibility. Pin numbering follows standard top-marking orientation with pin 1 marked by dot or bevel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of Q1 (NPN) | Low-impedance current sink node for NPN transistor; connects to ground or negative rail in common-emitter stage |
| 2 | Base of Q1 (NPN) | Control input for NPN; requires current-limited drive to maintain hFE linearity over 0.1–2 mA range |
| 3 | Collector of Q1 (NPN) | Output node for NPN; ties to load or next stage; shares thermal path with Q2 collector (pin 6) |
| 4 | Emitter of Q2 (PNP) | Low-impedance current source node for PNP; connects to positive rail or load return in complementary pair |
| 5 | Base of Q2 (PNP) | Control input for PNP; polarity-inverted drive relative to Q1 base; matches Q1 IB rating (±30 mA max) |
| 6 | Collector of Q2 (PNP) | Output node for PNP; mirrors Q1 collector function but sinks current toward positive rail |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood environments per stress test requirements (HTOL, TC, HAST, etc.) |
| Matched hFE linearity | hFE(0.1 mA)/hFE(2 mA) = 0.95 (typ.) - ensures minimal gain variation across operating current range |
| Complementary symmetry | Identical |VCEO|, |IC|, |VCE(sat)|, and fT between Q1 (NPN) and Q2 (PNP) - simplifies push-pull bias design |
| GR-grade hFE binning | 200–400 hFE range - eliminates need for external gain trimming in production amplifier modules |
| ES6 footprint | 6-pin SOT-363-compatible outline - enables drop-in replacement in existing layouts using industry-standard pick-and-place tools |
Applications
| Audio Pre-amplifier Stage | Automotive Sensor Signal Conditioning |
|---|---|
Use Scenario: Low-noise, low-distortion amplification of microphone or piezoelectric sensor outputs in cabin audio systems. IC Role / Device Role / Timing Role: Dual-transistor differential pair providing balanced gain and common-mode rejection before ADC input. Use Value: Matched hFE and symmetric VCE(sat) minimize offset drift over temperature, supporting <1% THD+N up to 15 kHz. | Use Scenario: Amplifying and level-shifting analog signals from pressure, temperature, or position sensors in engine control units. IC Role / Device Role / Timing Role: NPN/PNP pair configured as active load and current mirror for rail-to-rail output swing. Use Value: AEC-Q101 qualification and ±150 mA IC rating ensure reliable operation at 125 °C ambient in ECU enclosures. |
| Industrial Relay Driver | Low-Power Oscillator Core |
Use Scenario: Driving 5–24 VDC electromagnetic relays in PLC I/O modules with minimal external components. IC Role / Device Role / Timing Role: Q1 (NPN) switches relay coil ground path; Q2 (PNP) provides active pull-up for fast turn-off. Use Value: Combined ±50 V VCEO and ±150 mA IC support direct interface to 24 V industrial rails without series resistors. | Use Scenario: Building compact RC or crystal-based oscillators for clock generation in battery-powered instrumentation. IC Role / Device Role / Timing Role: Cross-coupled NPN/PNP pair forming high-gain, low-phase-noise active element in Colpitts topology. Use Value: 80 MHz fT and low Cob enable stable oscillation at 1–10 MHz with <±50 ppm frequency drift over –40 to +85 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-transistor amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSBC114YDXV6T1G | Single-die NPN+PNP pair, same ES6 package, hFE = 120–240 (Y grade), VCEO = ±50 V, fT = 250 MHz | Higher fT but narrower hFE range; not AEC-Q101 qualified | Select when wider bandwidth (>100 kHz) is required and automotive qualification is unnecessary |
| UMX23NTN | ES6 package, hFE = 120–270, VCEO = ±50 V, IC = ±100 mA, no AEC-Q101 certification | Lower IC rating and unqualified for automotive; RoHS-compliant but lacks stress-test validation | Choose for cost-sensitive consumer-grade amplifiers where 100 mA drive suffices and qualification is not mandated |
Compared with NSBC114YDXV6T1G and UMX23NTN, HN1B04FE-GR,LF offers guaranteed AEC-Q101 compliance, GR-grade hFE consistency (200–400), and validated thermal performance up to 150 °C junction - making it the only option suitable for production automotive signal chains requiring long-term reliability under thermal cycling.
Availability
HN1B04FE-GR,LF is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial relay drivers, low-frequency audio pre-amplifiers, and battery-powered oscillator circuits requiring stable component supply across extended temperature ranges and lifecycle continuity.
Supply support for HN1B04FE-GR,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer reliability standards.
The HN1B04FE-GR,LF belongs to Toshiba's AEC-Q101-qualified bipolar transistor family targeting space-efficient, thermally robust analog signal conditioning in harsh-environment applications.
FAQ
What is the hFE grade designation for HN1B04FE-GR,LF?
The "GR" suffix in HN1B04FE-GR,LF indicates the hFE binning grade: minimum 200, maximum 400 at VCE = 6 V and IC = 2 mA (Q1) or VCE = –6 V and IC = –2 mA (Q2). This tighter range improves predictability in bias network design versus the broader Y-grade (120–240) offered in other variants like HN1B04FE-Y,LF.
Is HN1B04FE-GR,LF qualified for automotive applications?
Yes, HN1B04FE-GR,LF is explicitly AEC-Q101 qualified per Toshiba's orderable part number list and datasheet Section 4. This certification covers temperature cycling, high-temperature operating life, and humidity testing - confirming suitability for automotive under-hood and cabin electronics where reliability at 125 °C ambient is required.
What does the ES6 package designation mean for HN1B04FE-GR,LF?
ES6 is Toshiba's proprietary name for a 6-pin, surface-mount, plastic-molded package measuring 1.6 × 2.8 × 1.1 mm - identical in footprint and solder profile to the industry-standard SOT-363. It supports automated assembly, provides adequate thermal dissipation for 100 mW total power, and carries the marking "HN1B04FE" plus date code and grade indicator.
How are the two transistors inside HN1B04FE-GR,LF configured internally?
HN1B04FE-GR,LF contains electrically isolated NPN (Q1) and PNP (Q2) transistors sharing a common die substrate. Pin 1 = Q1 emitter, pin 2 = Q1 base, pin 6 = Q1 collector; pin 4 = Q2 emitter, pin 5 = Q2 base, pin 3 = Q2 collector. No internal connection exists between Q1 and Q2 except shared thermal mass.
What is the maximum operating junction temperature for HN1B04FE-GR,LF?
The absolute maximum junction temperature (Tj) for HN1B04FE-GR,LF is +150 °C, as specified in Section 9 of the datasheet. Derating is required above Ta = 85 °C: PC decreases linearly to zero at 150 °C. Full-rated 100 mW operation is only valid at case temperatures ≤ 85 °C, consistent with AEC-Q101 thermal stress protocols.
HN1B04FE-GR,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 150mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Vce Saturation (Max) @ Ib, Ic:
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 6V
- Power - Max:
- 100mW
- Frequency - Transition:
- 80MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ES6
HN1B04FE-GR,LF FAQ
1.How can I place an order for HN1B04FE-GR,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1B04FE-GR,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1B04FE-GR,LF reliable?
The price and inventory of HN1B04FE-GR,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1B04FE-GR,LF is usually 5 days.
3.What payment methods are accepted for HN1B04FE-GR,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1B04FE-GR,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN1B04FE-GR,LF?
HN1B04FE-GR,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1B04FE-GR,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1B04FE-GR,LF?
For technical support, including HN1B04FE-GR,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1B04FE-GR,LF requirements.
6.How does Aetrix verify that HN1B04FE-GR,LF is sourced from the original manufacturer or authorized distributors?
All HN1B04FE-GR,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1B04FE-GR,LF meets industry standards.
7.What is the process for return or replacement of HN1B04FE-GR,LF?
All HN1B04FE-GR,LF units undergo pre-shipment inspection (PSI). If there is an issue with HN1B04FE-GR,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1B04FE-GR,LF part is unused and in its original packaging.
Return procedure for HN1B04FE-GR,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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