Toshiba Semiconductor and Storage HN1B04FE-GR,LXHF

Overview

HN1B04FE-GR,LXHF from Toshiba Electronic Devices & Storage Corporation is a dual bipolar transistor array containing one PNP and one NPN silicon epitaxial transistor in a single ES6 package. It delivers VCEO = ±50 V, IC = ±150 mA (max), hFE = 120–400, and fT = 80 MHz (typ.), enabling low-frequency amplifier stages in automotive and industrial signal conditioning circuits.

For engineers reviewing the HN1B04FE-GR,LXHF datasheet, HN1B04FE-GR,LXHF pinout, HN1B04FE-GR,LXHF application, or HN1B04FE-GR,LXHF equivalent, key selection criteria include verified AEC-Q101 qualification for automotive use, matched hFE linearity (0.95 typ.), and dual-transistor thermal tracking in a 6-pin surface-mount package.

Technical Context

The HN1B04FE-GR,LXHF integrates complementary PNP and NPN transistors on a single die with shared thermal environment, supporting push-pull and differential amplifier topologies. Its hFE classification GR denotes 200–400 gain range for both devices, and excellent hFE linearity ensures consistent small-signal amplification across IC = 0.1–2 mA.

Rated for ±50 V VCEO and ±150 mA IC, it operates within 100 mW total power dissipation at Ta = 25 °C, with junction temperature up to +150 °C. The device meets AEC-Q101 stress test requirements for automotive applications when ordered as HN1B04FE-GR,LXHF.

Key Specifications

Pinout & Package

HN1B04FE-GR,LXHF uses the ES6 package: 6-pin, 1.6 × 2.8 × 1.0 mm surface-mount plastic molded case, weight 3.0 mg (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual bipolar transistor applications.

Compared with HN1B04FE-Y,LXHF and UMX2NTR, the HN1B04FE-GR,LXHF provides higher guaranteed hFE (200–400) and formal AEC-Q101 validation-critical for automotive signal chain reliability-while maintaining identical pinout and thermal design constraints.

Availability

HN1B04FE-GR,LXHF is available at Aetrix Electronics and suitable for automotive body control modules, industrial analog I/O interfaces, and audio signal conditioning circuits requiring stable component supply and long-term lifecycle support.

Supply support for HN1B04FE-GR,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for automotive, industrial, and consumer applications.

The HN1B04FE series belongs to Toshiba's AEC-Q101-qualified bipolar transistor portfolio, engineered specifically for robust low-frequency amplification and switching in harsh-environment automotive electronics.

FAQ

What is the hFE classification for HN1B04FE-GR,LXHF?

The HN1B04FE-GR,LXHF carries the GR hFE classification, specifying a guaranteed DC current gain range of 200 to 400 at VCE = ±6 V and IC = ±2 mA. This grade ensures higher minimum gain than the Y-class variant, improving bias stability in amplifier and switching applications where gain margin is critical. The HN1B04FE-GR,LXHF maintains this specification across both integrated transistors under identical test conditions.

Is HN1B04FE-GR,LXHF qualified for automotive use?

Yes, HN1B04FE-GR,LXHF is explicitly AEC-Q101 qualified, as confirmed in Toshiba's orderable part number table and reliability documentation. This qualification covers temperature cycling, mechanical shock, humidity bias, and high-temperature operating life testing. The HN1B04FE-GR,LXHF is designated for automotive use in its marking and packaging codes, distinguishing it from general-purpose variants like HN1B04FE-Y,LXHF.

What is the pin configuration of HN1B04FE-GR,LXHF?

HN1B04FE-GR,LXHF uses a standardized 6-pin ES6 package with pin 1 = Emitter of Q1 (NPN), pin 2 = Base of Q1, pin 3 = Collector of Q2 (PNP), pin 4 = Emitter of Q2, pin 5 = Base of Q2, and pin 6 = Collector of Q1. This arrangement supports complementary push-pull layouts without cross-coupling traces. The HN1B04FE-GR,LXHF pinout matches all members of the HN1B04FE family regardless of hFE grade or packaging suffix.

What is the maximum power dissipation for HN1B04FE-GR,LXHF?

The HN1B04FE-GR,LXHF has a total collector power dissipation (PC) rating of 100 mW at Ta = 25 °C, as specified in the common absolute maximum ratings table. Derating is required above 25 °C at 0.8 mW/°C. This limit applies to the combined dissipation of both transistors and must be observed in PCB layout with adequate copper area and airflow. The HN1B04FE-GR,LXHF thermal performance is defined by its 3.0 mg package mass and JEDEC-standard ES6 thermal resistance profile.

Does HN1B04FE-GR,LXHF support low-frequency amplifier applications?

Yes, HN1B04FE-GR,LXHF is explicitly designed for low-frequency amplifier applications, as stated in Toshiba's official documentation. Its 80 MHz transition frequency (fT), ±50 V VCEO rating, and high hFE linearity (0.95 typ.) make it suitable for audio pre-amplifiers, sensor signal conditioning, and instrumentation amplifiers operating below 1 MHz. The HN1B04FE-GR,LXHF delivers stable gain and low distortion in these roles due to matched transistor characteristics and thermal coupling.