Toshiba Semiconductor and Storage HN1B04FE-Y,LF

Overview

HN1B04FE-Y,LF from Toshiba Electronic Devices & Storage Corporation is a dual bipolar transistor array containing one PNP (Q1) and one NPN (Q2) silicon epitaxial transistor in a single ES6 package. It delivers VCEO = ±50 V, IC(max) = ±150 mA, hFE = 120–400, and fT = 80 MHz (typ.), enabling low-frequency amplifier stages in compact analog signal chains.

For engineers reviewing the HN1B04FE-Y,LF datasheet, HN1B04FE-Y,LF pinout, HN1B04FE-Y,LF application, or HN1B04FE-Y,LF equivalent, key selection criteria include complementary PNP/NPN pairing, AEC-Q101 qualification for automotive use, high hFE linearity (0.95 typ.), and matched electrical characteristics across both transistors under identical test conditions.

Technical Context

The HN1B04FE-Y,LF integrates two discrete transistors-Q1 (PNP) and Q2 (NPN)-with symmetrical absolute maximum ratings (±50 V VCEO, ±150 mA IC) and tightly correlated DC current gain (hFE 120–400, Y-class = 120–240). Both exhibit identical transition frequency (fT = 80 MHz typ.) and collector output capacitance (Cob = 4 pF typ. at 1 MHz).

Its internal circuit supports push-pull or differential pair configurations with shared thermal coupling and matched hFE linearity-verified by hFE(IC=±0.1 mA)/hFE(IC=±2 mA) = 0.95 (typ.). The device operates within −55 °C to +150 °C junction temperature range and dissipates up to 100 mW total power.

Key Specifications

Pinout & Package

HN1B04FE-Y,LF uses the ES6 surface-mount package (3.0 mg typ., 1.6 × 2.8 × 1.1 mm), optimized for space-constrained analog PCB layouts and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary bipolar transistor applications.

Compared with NSBC114YDXV6T1G and UMT1N/UMT2N series, the HN1B04FE-Y,LF uniquely provides monolithic PNP/NPN matching, AEC-Q101 compliance, and superior hFE linearity-making it the only option for space-limited, automotive-grade, low-distortion analog amplification.

Availability

HN1B04FE-Y,LF is available at Aetrix Electronics and suitable for automotive door modules, portable audio pre-amplifiers, industrial relay interfaces, and sensor signal conditioning circuits requiring stable component supply and long-term lifecycle continuity.

Supply support for HN1B04FE-Y,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade qualification.

The HN1B04FE-Y,LF belongs to Toshiba's general-purpose bipolar transistor family targeting low-frequency analog signal processing and automotive body electronics where complementary symmetry and thermal tracking are critical.

FAQ

What is the package type and lead finish for HN1B04FE-Y,LF?

HN1B04FE-Y,LF uses the ES6 surface-mount package (1.6 × 2.8 × 1.1 mm) with lead-free (Pb-free) matte tin plating per J-STD-020. The ",LF" suffix explicitly denotes lead-free compliance and RoHS conformance, verified by Toshiba's material declarations and process controls.

Is HN1B04FE-Y,LF qualified for automotive applications?

Yes, HN1B04FE-Y,LF is AEC-Q101 qualified for automotive use, as confirmed in Toshiba's official orderable part number list and reliability report Rev.4.0. This qualification covers temperature cycling, high-temperature operating life, and ESD robustness required for under-hood and cabin modules.

What does the "Y" in HN1B04FE-Y,LF indicate?

The "Y" denotes the hFE classification grade: 120–240 at VCE = 6 V and IC = 2 mA for Q1 (PNP), and VCE = −6 V and IC = −2 mA for Q2 (NPN). This binning ensures predictable gain behavior in production designs without post-manufacture sorting.

Can HN1B04FE-Y,LF replace discrete PNP and NPN transistors in existing designs?

Yes, HN1B04FE-Y,LF can replace discrete PNP/NPN pairs if the PCB layout accommodates the ES6 6-pin footprint and pin assignments match (pins 1–2–6 for Q1; pins 3–4–5 for Q2). Thermal coupling and parameter matching improve performance over separate devices.

What is the maximum allowable power dissipation for HN1B04FE-Y,LF?

HN1B04FE-Y,LF has a total collector power dissipation (PC) rating of 100 mW at Ta = 25 °C. Derating is required above 25 °C at 0.8 mW/°C, limiting usable power to ~60 mW at 75 °C ambient-sufficient for low-power analog gain stages but not for switching power applications.