Toshiba Semiconductor and Storage HN1B04FE-Y,LXHF

Overview

HN1B04FE-Y,LXHF from Toshiba Electronic Devices & Storage Corporation is a dual bipolar transistor array comprising one PNP and one NPN silicon epitaxial transistor in a single ES6 package. It delivers VCEO = ±50 V, IC(max) = ±150 mA, hFE = 120–400 (Y-grade), fT = 80 MHz (typ.), and VCE(sat) = 0.25 V / –0.3 V at rated current - enabling compact low-frequency amplifier stages in space-constrained automotive and industrial signal conditioning circuits.

For engineers reviewing the HN1B04FE-Y,LXHF datasheet, HN1B04FE-Y,LXHF pinout, HN1B04FE-Y,LXHF application, or HN1B04FE-Y,LXHF equivalent, key selection criteria include dual complementary topology, AEC-Q101 qualification for automotive use, hFE linearity (0.95 typ. ratio), ±50 V breakdown, and ES6 6-pin SOT-363 footprint compatibility with manual or automated assembly.

Technical Context

This device integrates matched PNP and NPN transistors on a single die with shared thermal coupling, supporting push-pull, differential pair, and complementary gain-stage configurations. Its ±50 V VCEO rating and ±150 mA IC(max) support operation across rail-to-rail analog signal paths up to 10 Vpp in low-frequency (<10 MHz) applications.

The hFE linearity metric - hFE(IC=±0.1 mA)/hFE(IC=±2 mA) = 0.95 (typ.) - ensures consistent small-signal gain over bias current variation, critical for precision preamplifiers and sensor interface front-ends where distortion must remain below –60 dBc.

Key Specifications

Pinout & Package

HN1B04FE-Y,LXHF uses the ES6 package - a 6-pin SOT-363 surface-mount outline measuring 2.0 × 1.25 × 0.9 mm (typ.), weight 3.0 mg - optimized for high-density PCB layouts and reflow-compatible assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual complementary transistor applications.

Compared with NSBC114YDXV6T1G and UMX23NTN, HN1B04FE-Y,LXHF uniquely provides matched NPN+PNP gain elements with AEC-Q101 validation, hFE linearity optimization, and balanced ±50 V ratings - making it the only choice for automotive-compliant, low-distortion, rail-symmetric analog signal paths requiring dual-polarity drive.

Availability

HN1B04FE-Y,LXHF is available at Aetrix Electronics and suitable for automotive cabin electronics, industrial sensor interfaces, and low-power relay control systems requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.

Supply support for HN1B04FE-Y,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer reliability standards.

HN1B04FE-Y,LXHF belongs to Toshiba's HN-series dual bipolar transistor family, engineered specifically for AEC-Q101-compliant analog signal conditioning in space-constrained automotive ECUs and industrial sensor nodes.

FAQ

What is the hFE classification for HN1B04FE-Y,LXHF?

HN1B04FE-Y,LXHF carries the Y-grade hFE classification, specifying a guaranteed DC current gain range of 120 to 240 at VCE = 6 V and IC = 2 mA (Q1) or VCE = –6 V and IC = –2 mA (Q2). This binning ensures predictable bias point stability in production designs without post-manufacturing sorting.

Is HN1B04FE-Y,LXHF qualified for automotive applications?

Yes, HN1B04FE-Y,LXHF is AEC-Q101 qualified, as confirmed in Section 6 of the official Toshiba datasheet. The "Y,LXHF" suffix denotes automotive-grade packaging and screening - including extended temperature operation, enhanced ESD protection, and validated reliability under thermal cycling and mechanical shock per AEC-Q101 requirements.

What does the "LXHF" suffix mean in HN1B04FE-Y,LXHF?

The "LXHF" suffix indicates lead-free (Pb-free), halogen-free, and AEC-Q101-qualified packaging - compliant with JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), RoHS Directive 2011/65/EU, and Toshiba's internal automotive reliability screening protocol. It replaces older "-Y" or "-GR" variants for automotive production builds.

Can HN1B04FE-Y,LXHF replace discrete NPN and PNP transistors in existing designs?

Yes, HN1B04FE-Y,LXHF can replace separate SOT-23 NPN and PNP transistors in many cases - provided the PCB layout accommodates the ES6 (SOT-363) 6-pin footprint and pin assignments match the functional mapping (pins 1–2–6 for Q1, pins 3–4–5 for Q2). Thermal coupling between transistors also improves matching over discrete placement.

What is the maximum allowable power dissipation for HN1B04FE-Y,LXHF?

HN1B04FE-Y,LXHF has a total collector power dissipation (PC) rating of 100 mW at Ta = 25 °C, as specified in Section 9 of the Toshiba datasheet. Derating is required above 25 °C - approximately 0.8 mW/°C reduction - with full derating to zero at Tj = 150 °C, per the PC(Ta) curve in Figure 15.1.