Toshiba Semiconductor and Storage HN1B04FU-GR,LF

Overview

HN1B04FU-GR,LF from Toshiba Electronic Devices & Storage Corporation is a dual bipolar transistor array containing one PNP and one NPN silicon epitaxial transistor in a single US6 package. It delivers VCEO = ±50 V, IC(max) = ±150 mA, hFE = 200–400 (GR grade), and fT = 4 MHz (NPN) / 2 MHz (PNP), enabling low-frequency amplifier stages in compact analog signal chains.

For engineers reviewing the HN1B04FU-GR,LF datasheet, HN1B04FU-GR,LF pinout, HN1B04FU-GR,LF application, or HN1B04FU-GR,LF equivalent, key selection criteria include complementary polarity pairing, AEC-Q101 qualification for automotive use, hFE linearity (0.95 typ.), and US6 footprint compatibility with space-constrained PCB layouts.

Technical Context

The HN1B04FU-GR,LF integrates matched PNP and NPN transistors on a single die, sharing thermal coupling and process consistency. Each device supports independent biasing with separate emitter, base, and collector terminals-pin 1 (E1), 2 (B1), 3 (C2), 4 (E2), 5 (B2), 6 (C1)-enabling push-pull, differential pair, or phase-splitter configurations without inter-device mismatch drift.

Its AEC-Q101 qualification confirms suitability for automotive-grade ambient temperature operation (−55 °C to 125 °C storage, 150 °C junction), while the ±50 V VCEO rating and 200 mW total power dissipation (FR4 board) support robust operation in low-frequency audio preamps, sensor interface buffers, and discrete logic level translators.

Key Specifications

Pinout & Package

Package: US6 - 6-pin ultra-small surface-mount package (2.1 × 1.8 × 0.9 mm, 6.8 mg), optimized for high-density analog PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary bipolar transistor applications.

Compared with HN1B04FU-Y,LF and UMX2NTR, the HN1B04FU-GR,LF provides tighter hFE binning and verified AEC-Q101 compliance-critical for automotive signal conditioning where gain consistency and reliability under thermal stress are mandatory.

Availability

HN1B04FU-GR,LF is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and portable audio equipment requiring stable component supply and long-term lifecycle support.

Supply support for HN1B04FU-GR,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade qualification.

The HN1B04FU-GR,LF belongs to Toshiba's legacy bipolar transistor family targeting low-frequency analog signal processing where complementary symmetry, thermal tracking, and AEC-Q101 validation are essential.

FAQ

What is the hFE grade of HN1B04FU-GR,LF and how does it affect circuit design?

The HN1B04FU-GR,LF carries the GR hFE grade, specifying a DC current gain range of 200 to 400 at VCE = 6 V and IC = 2 mA. This tighter binning reduces variation in bias point selection across production units, allowing fixed-resistor bias networks without trimmers in low-frequency amplifier or switch applications. Designers can rely on consistent gain behavior across temperature and aging, especially critical in automotive modules where field calibration is impractical.

Is HN1B04FU-GR,LF qualified for automotive applications?

Yes, HN1B04FU-GR,LF is explicitly AEC-Q101 qualified, as confirmed in the official Toshiba documentation. This qualification covers stress tests including temperature cycling, humidity bias, mechanical shock, and high-temperature operating life-validating its use in automotive body control modules, lighting drivers, and sensor interfaces. The "GR" suffix and ",LF" lead-free marking further indicate compliance with automotive material and assembly standards.

What is the maximum power dissipation of HN1B04FU-GR,LF and how is it measured?

The HN1B04FU-GR,LF has a total collector power dissipation (PC) rating of 200 mW when mounted on a standard FR4 PCB (25.4 mm × 25.4 mm × 1.6 mm with 0.32 mm² copper pads). This value is specified at Ta = 25 °C and must be derated linearly above 70 °C ambient temperature. Both transistors share this thermal budget, so simultaneous high-current operation of Q1 and Q2 requires careful thermal analysis to avoid exceeding the 150 °C maximum junction temperature.

How are the pins of HN1B04FU-GR,LF assigned between the NPN and PNP transistors?

HN1B04FU-GR,LF uses a standardized US6 pinout: Pin 1 = Emitter of Q1 (NPN), Pin 2 = Base of Q1 (NPN), Pin 3 = Collector of Q2 (PNP), Pin 4 = Emitter of Q2 (PNP), Pin 5 = Base of Q2 (PNP), Pin 6 = Collector of Q1 (NPN). This arrangement allows direct implementation of push-pull output stages or differential pairs without cross-wiring, and matches Toshiba's published internal circuit diagram and package drawings.

Does HN1B04FU-GR,LF support high-frequency signal amplification?

No, HN1B04FU-GR,LF is optimized for low-frequency applications only. Its transition frequencies are 4 MHz for the NPN (Q1) and 2 MHz for the PNP (Q2), limiting usable bandwidth to approximately 100 kHz for linear amplification. These values are confirmed in Toshiba's electrical characteristics tables under fT test conditions. For RF or wideband analog applications, discrete transistors with fT > 100 MHz or integrated RF amplifiers should be selected instead.