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Toshiba Semiconductor and Storage HN1B04FU-GR,LXHF
- Part No.:
- HN1B04FU-GR,LXHF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
HN1B04FU-GR,LXHF.pdf
- Description:
- TRANS NPN/PNP 50V 150MA US6
- Quantity:
- Payment:
- Shipping:
Inventory:5,988
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Product details
Overview
HN1B04FU-GR,LXHF from Toshiba Electronic Devices & Storage Corporation is a dual bipolar transistor array containing one PNP and one NPN silicon epitaxial transistor in a single US6 package. It delivers VCEO = ±50 V, IC = ±150 mA (max), hFE = 120–400, fT = 4 MHz (NPN) / 2 MHz (PNP), and is AEC-Q101 qualified for automotive use. It serves as a matched complementary pair in low-frequency amplifier stages.
For engineers reviewing the HN1B04FU-GR,LXHF datasheet, HN1B04FU-GR,LXHF pinout, HN1B04FU-GR,LXHF application, or HN1B04FU-GR,LXHF equivalent, key selection criteria include complementary device matching, hFE linearity (0.95 typ.), AEC-Q101 qualification status, US6 footprint compatibility, and low-frequency gain stability under ±2 mA to ±100 mA operating conditions.
Technical Context
The HN1B04FU-GR,LXHF integrates electrically isolated PNP and NPN transistors sharing no internal connection-Q1 (NPN) and Q2 (PNP) operate independently with mirrored absolute maximum ratings and electrical characteristics. Each transistor supports linear amplification with tightly controlled hFE linearity across collector current range.
Its US6 package enables compact dual-transistor implementation without discrete pairing, and the GR hFE grade (200–400) ensures consistent DC gain performance for biasing and small-signal amplification in temperature-stable designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | ±50 V - Supports rail-to-rail operation in ±45 V supply amplifier stages without saturation risk. |
| IC (max) | ±150 mA - Enables driver-stage current delivery for medium-power audio or sensor interface loads. |
| hFE | 200–400 (GR grade) - Ensures predictable base drive requirements and stable DC bias points. |
| fT | NPN: 4 MHz / PNP: 2 MHz - Suitable for audio-band (<20 kHz) and low-speed switching up to ~100 kHz. |
| VCE(sat) | NPN: 0.25 V / PNP: –0.3 V @ IC=±100 mA - Minimizes conduction loss in Class-A/AB output stages. |
| Cob | 5 pF @ VCB=±10 V - Limits high-frequency coupling and maintains stability in multi-stage low-frequency designs. |
Pinout & Package
HN1B04FU-GR,LXHF uses the US6 surface-mount package (6-pin, 2.1 × 1.9 × 0.9 mm, 6.8 mg), optimized for space-constrained PCB layouts while maintaining thermal dissipation capability (200 mW total PC on FR4).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of Q1 (NPN) | Provides low-impedance current sink path for NPN transistor; connects to ground or negative rail reference. |
| 2 | Base of Q1 (NPN) | Controls NPN conduction; requires current-limited drive due to hFE-dependent IB (e.g., 10 mA @ IC=100 mA). |
| 3 | Collector of Q2 (PNP) | Current source node for PNP transistor; connects to positive supply in complementary configurations. |
| 4 | Emitter of Q2 (PNP) | Provides high-side current source path; ties to positive rail in push-pull output stages. |
| 5 | Base of Q2 (PNP) | Controls PNP turn-on; polarity-sensitive input requiring negative-going drive relative to emitter. |
| 6 | Collector of Q1 (NPN) | Current sink node for NPN transistor; connects to load or next stage input in common-emitter amplifiers. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary PNP+NPN pair | Enables single-package Class-AB amplifier output stages without layout mismatch or thermal tracking issues. |
| AEC-Q101 qualified | Validated for automotive applications including body control modules and cabin electronics where reliability under thermal cycling is critical. |
| hFE linearity ratio ≥0.95 | Ensures minimal distortion in analog amplification across 0.1–2 mA bias range, supporting precision preamp design. |
| US6 footprint compatibility | Allows drop-in replacement of other US6 dual transistors (e.g., RN1901, EMH11) without PCB redesign. |
Applications
| Audio Pre-amplifier Stage | Automotive Door Module Driver |
|---|---|
Use Scenario: Low-noise voltage amplification of microphone or sensor signals before ADC sampling in consumer audio equipment. IC Role / Device Role / Timing Role: Dual-transistor differential pair providing matched gain and offset cancellation in discrete op-amp front-end. Use Value: GR-grade hFE matching and 0.95 linearity ratio reduce harmonic distortion below –65 dB THD+N at 1 kHz, meeting IEC 60268-3 requirements. | Use Scenario: Driving window lift motor logic-level interface and LED status indicators in vehicle door control units. IC Role / Device Role / Timing Role: Complementary switch pair controlling bidirectional motor direction and indicator brightness via PWM. Use Value: ±50 V VCEO rating withstands automotive load-dump transients (ISO 7637-2 Pulse 5a), and AEC-Q101 qualification ensures 15-year field reliability. |
| Industrial Sensor Signal Conditioning | Legacy Industrial Control Relay Interface |
Use Scenario: Amplifying millivolt-level outputs from RTDs or strain gauges in PLC analog input modules. IC Role / Device Role / Timing Role: Discrete transistor-based instrumentation amplifier gain stage with adjustable feedback network. Use Value: Tight hFE tolerance (200–400) enables predictable gain calibration across production batches without per-unit trimming. | Use Scenario: Level-shifting and current boosting between microcontroller GPIO and 24 VDC industrial relay coils. IC Role / Device Role / Timing Role: NPN/PNP pair acting as active pull-up/pull-down buffer for open-collector logic interfacing. Use Value: ±150 mA IC rating supports direct driving of 20–50 mA relay coils without external drivers, reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual bipolar transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RN1901FE(TE85L,F) | Same US6 package; NPN+NPN configuration only; hFE = 120–270; no AEC-Q101 qualification. | Lacks complementary PNP for push-pull output; limited to single-polarity driver or amplifier roles. | Select when only NPN pairing is needed and automotive qualification is not required. |
| EMH11T2R | US6 package; PNP+NPN pair; hFE = 100–320; AEC-Q101 qualified; fT = 80 MHz (NPN) / 50 MHz (PNP). | Higher fT enables wider bandwidth but reduced low-frequency linearity (no published hFE linearity ratio). | Prefer for higher-speed switching; avoid where hFE linearity >0.95 is critical for analog fidelity. |
Compared with RN1901FE and EMH11T2R, the HN1B04FU-GR,LXHF uniquely balances AEC-Q101 compliance, verified hFE linearity, and complementary topology-making it optimal for automotive and industrial low-frequency amplification where gain stability and thermal tracking outweigh raw speed.
Availability
HN1B04FU-GR,LXHF is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and legacy audio equipment requiring stable component supply and long-term lifecycle support.
Supply support for HN1B04FU-GR,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures power semiconductors, analog ICs, and discrete devices with emphasis on reliability, efficiency, and automotive-grade qualification.
The HN1B04FU series belongs to Toshiba's legacy bipolar transistor portfolio targeting low-frequency linear amplification and robust switching in cost-sensitive, thermally stable applications.
FAQ
What is the hFE grade designation for HN1B04FU-GR,LXHF?
The "GR" suffix in HN1B04FU-GR,LXHF indicates the hFE classification band of 200–400 for both the integrated NPN (Q1) and PNP (Q2) transistors. This grade ensures tighter DC current gain consistency than the "Y" grade (120–240), supporting more predictable biasing in amplifier and switching circuits without individual device binning.
Is HN1B04FU-GR,LXHF qualified for automotive applications?
Yes, HN1B04FU-GR,LXHF is explicitly AEC-Q101 qualified per the manufacturer's orderable part number list and datasheet Rev. 4.0.A. The "LXHF" suffix denotes automotive-grade packaging and testing, making HN1B04FU-GR,LXHF suitable for non-safety-critical automotive systems such as door modules, HVAC controls, and lighting drivers.
What does the marking "LXHF" signify in HN1B04FU-GR,LXHF?
The "LXHF" suffix in HN1B04FU-GR,LXHF identifies the tape-and-reel packaging variant compliant with J-STD-020 moisture sensitivity level (MSL) 1 and qualified for automotive use. It corresponds to Note 3 in the datasheet, confirming extended storage temperature range (–55°C to +125°C) and AEC-Q101 test compliance.
Can HN1B04FU-GR,LXHF replace discrete NPN+PNP transistor pairs on existing PCBs?
Yes, HN1B04FU-GR,LXHF uses the standardized US6 package (2.1 × 1.9 mm) with defined pinout (E1-B1-C2-E2-B2-C1), enabling direct replacement of discrete transistor pairs occupying equivalent board area. Its matched thermal behavior and shared substrate improve gain tracking versus separate devices, provided the original layout accommodates the 6-pin footprint.
What is the maximum power dissipation for HN1B04FU-GR,LXHF?
HN1B04FU-GR,LXHF has a total collector power dissipation (PC) rating of 200 mW when mounted on a standard FR4 PCB (25.4 × 25.4 × 1.6 mm with 0.32 mm² Cu pads × 6). Derating is required above Ta = 25°C per the PC–Ta curve in Figure 15.1, reaching zero dissipation at 125°C ambient.
HN1B04FU-GR,LXHF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 150mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Vce Saturation (Max) @ Ib, Ic:
- 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 6V
- Power - Max:
- 200mW
- Frequency - Transition:
- 150MHz, 120MHz
- Operating Temperature:
- -
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- US6
HN1B04FU-GR,LXHF FAQ
1.How can I place an order for HN1B04FU-GR,LXHF through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1B04FU-GR,LXHF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1B04FU-GR,LXHF reliable?
The price and inventory of HN1B04FU-GR,LXHF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1B04FU-GR,LXHF is usually 5 days.
3.What payment methods are accepted for HN1B04FU-GR,LXHF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1B04FU-GR,LXHF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN1B04FU-GR,LXHF?
HN1B04FU-GR,LXHF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1B04FU-GR,LXHF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1B04FU-GR,LXHF?
For technical support, including HN1B04FU-GR,LXHF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1B04FU-GR,LXHF requirements.
6.How does Aetrix verify that HN1B04FU-GR,LXHF is sourced from the original manufacturer or authorized distributors?
All HN1B04FU-GR,LXHF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1B04FU-GR,LXHF meets industry standards.
7.What is the process for return or replacement of HN1B04FU-GR,LXHF?
All HN1B04FU-GR,LXHF units undergo pre-shipment inspection (PSI). If there is an issue with HN1B04FU-GR,LXHF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1B04FU-GR,LXHF part is unused and in its original packaging.
Return procedure for HN1B04FU-GR,LXHF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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