Toshiba Semiconductor and Storage HN1B04FU-Y(T5L,F,T

Overview

HN1B04FU-Y(T5L,F,T) from Toshiba Electronic Devices & Storage Corporation is a dual bipolar transistor array containing one PNP and one NPN silicon epitaxial transistor in a single US6 package. It delivers VCEO = ±50 V, IC = ±150 mA max, hFE = 120–400, fT = 2 MHz (Q1) / 4 MHz (Q2), and is AEC-Q101 qualified for automotive use. It serves in low-frequency amplifier stages requiring matched complementary gain and voltage handling.

For engineers reviewing the HN1B04FU-Y(T5L,F,T) datasheet, HN1B04FU-Y(T5L,F,T) pinout, HN1B04FU-Y(T5L,F,T) application, or HN1B04FU-Y(T5L,F,T) equivalent, key selection criteria include complementary PNP/NPN pairing in one package, AEC-Q101 qualification status, hFE linearity (0.95 typ.), VCE(sat) ≤ 0.25 V (Q1) / ≤ –0.3 V (Q2), and US6 footprint compatibility with space-constrained analog signal paths.

Technical Context

The HN1B04FU-Y(T5L,F,T) integrates two discrete transistors - Q1 (NPN) and Q2 (PNP) - on a single die with electrically isolated junctions. Each exhibits independent absolute maximum ratings: Q1 supports VCBO = 60 V, VCEO = 50 V, IC = 150 mA; Q2 supports VCBO = –50 V, VCEO = –50 V, IC = –150 mA. Both share PC = 200 mW (FR4 board), Tj(max) = 150 °C, and Tstg = –55 to 150 °C.

Electrical behavior is characterized by high hFE linearity (hFE at 0.1 mA / hFE at 2 mA = 0.95 typ. for both devices), enabling stable small-signal amplification across bias ranges. Transition frequencies differ per polarity: fT = 2 MHz (Q1, NPN) and fT = 4 MHz (Q2, PNP), reflecting optimized carrier transport for low-frequency operation up to ~1 MHz.

Key Specifications

Pinout & Package

HN1B04FU-Y(T5L,F,T) uses the US6 surface-mount package (6-pin, 2.1 × 1.8 × 0.9 mm, 6.8 mg), optimized for compact analog layouts and automated assembly. Pin numbering follows standard top-view orientation with marking dot indicating Pin 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary bipolar transistor applications.

Compared with NSBC114YDXV6T1G and UMX23NTN, the HN1B04FU-Y(T5L,F,T) offers superior hFE linearity (0.95 vs. unspecified) and tighter hFE grading (Y: 120–240), making it preferable for low-distortion analog stages - while UMX23NTN provides AEC-Q101 compliance in a compatible footprint, and NSBC114YDXV6T1G delivers higher bandwidth at the expense of qualification and linearity.

Availability

HN1B04FU-Y(T5L,F,T) is available at Aetrix Electronics and suitable for low-frequency amplifiers, automotive door module drivers, industrial sensor signal conditioning, and legacy RS-232 level shifting requiring stable component supply and AEC-Q101 assurance.

Supply support for HN1B04FU-Y(T5L,F,T) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and automotive-grade performance.

The HN1B04FU series belongs to Toshiba's general-purpose bipolar transistor family targeting low-frequency analog and automotive body electronics, where complementary pairing, voltage robustness, and production-grade hFE consistency are prioritized over RF performance.

FAQ

What is the pin configuration of the HN1B04FU-Y(T5L,F,T)?

The HN1B04FU-Y(T5L,F,T) uses a US6 package with six pins: Pin 1 = Emitter of Q1 (NPN), Pin 2 = Base of Q1, Pin 3 = Collector of Q2 (PNP), Pin 4 = Emitter of Q2, Pin 5 = Base of Q2, Pin 6 = Collector of Q1. This arrangement supports push-pull and complementary amplifier topologies without external cross-coupling traces.

Is the HN1B04FU-Y(T5L,F,T) qualified for automotive applications?

Yes, the HN1B04FU-Y(T5L,F,T) is AEC-Q101 qualified, as confirmed in the official Toshiba datasheet Rev. 4.0.A. This qualification covers temperature cycling, humidity testing, and mechanical stress validation, supporting its use in automotive body electronics such as door modules and lighting controls - though not for safety-critical systems.

What are the hFE classification options for the HN1B04FU-Y(T5L,F,T)?

The HN1B04FU-Y(T5L,F,T) carries the "Y" hFE grade, specifying DC current gain between 120 and 240 at VCE = 6 V and IC = 2 mA (Q1) or VCE = –6 V and IC = –2 mA (Q2). The "GR" variant (e.g., HN1B04FU-GR) offers 200–400 hFE, but the Y-grade ensures tighter production spread for predictable biasing in production designs.

What is the maximum power dissipation of the HN1B04FU-Y(T5L,F,T)?

The HN1B04FU-Y(T5L,F,T) has a total collector power dissipation (PC) of 200 mW when mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm with 0.32 mm² Cu pads per pin). Derating is required above 25 °C ambient, with full rating valid only up to approximately 70 °C case temperature based on the PC–Ta curve in the datasheet.

How does the hFE linearity of the HN1B04FU-Y(T5L,F,T) benefit amplifier design?

The HN1B04FU-Y(T5L,F,T) achieves hFE linearity of 0.95 (typ.), calculated as hFE at 0.1 mA divided by hFE at 2 mA. This near-constant gain across three decades of collector current minimizes harmonic distortion in Class-A and AB amplifiers, especially in microphone preamps and sensor front-ends where signal fidelity is critical - a measurable advantage over generic transistors with uncharacterized hFE roll-off.