Toshiba Semiconductor and Storage HN1C01FE-GR,LF

Overview

HN1C01FE-GR,LF from Toshiba Electronic Devices & Storage Corporation is a dual NPN bipolar transistor in an ES6 package, rated for VCEO = 50 V, IC(max) = 150 mA per device, and hFE = 200–400 (GR grade), designed for low-frequency amplifier stages in automotive signal conditioning circuits.

For engineers reviewing the HN1C01FE-GR,LF datasheet, HN1C01FE-GR,LF pinout, HN1C01FE-GR,LF application, or HN1C01FE-GR,LF equivalent, key selection criteria include AEC-Q101 qualification, dual-transistor symmetry, hFE linearity (0.95 typ.), and thermal derating behavior at elevated ambient temperatures.

Technical Context

This dual NPN transistor integrates two electrically independent silicon epitaxial transistors in a single ES6 package with shared thermal path. Each transistor supports VCEO = 50 V, IC = 150 mA, and exhibits matched hFE characteristics across the GR bin (200–400).

It delivers fT = 2 MHz (typ.) and Cob = 1 pF (typ.) at VCB = 10 V, enabling stable gain in audio and sensor interface amplifiers. The hFE linearity ratio hFE(IC=0.1 mA)/hFE(IC=2 mA) = 0.95 (typ.) ensures minimal distortion in Class-A biasing configurations.

Key Specifications

Pinout & Package

Package: ES6 - 6-pin, dual-transistor, surface-mount plastic package (3.0 mg typical weight), footprint compatible with JEDEC MO-220 standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Compared with NSVD2001MXV6T1G and UMT2N7002KTCR, the HN1C01FE-GR,LF uniquely provides AEC-Q101-qualified dual NPN topology with verified hFE linearity and 50 V breakdown-enabling single-package, low-distortion amplification in automotive signal chains where alternatives require redesign or sacrifice performance.

Availability

HN1C01FE-GR,LF is available at Aetrix Electronics and suitable for automotive door modules, industrial sensor interfaces, low-voltage audio preamplifiers, and LED dashboard drivers requiring stable component supply and AEC-Q101 compliance.

Supply support for HN1C01FE-GR,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for automotive, industrial, and consumer applications, with emphasis on AEC-Q101 validation and thermal robustness.

The HN1C01FE-GR,LF belongs to Toshiba's dual-transistor amplifier family targeting low-frequency signal conditioning in space-constrained automotive ECUs, where matched gain and thermal coupling improve system-level consistency.

FAQ

What is the AEC-Q101 qualification status of HN1C01FE-GR,LF?

HN1C01FE-GR,LF is explicitly marked "YES" for AEC-Q101 qualification in Toshiba's official orderable part number list. This confirms full compliance with stress tests including temperature cycling, high-temperature operating life, and mechanical shock-validating its use in automotive under-hood and cabin modules per industry requirements. The qualification applies specifically to the GR-grade variant with LF (lead-free) finish.

How does the hFE linearity of HN1C01FE-GR,LF impact amplifier design?

HN1C01FE-GR,LF achieves hFE(IC=0.1 mA)/hFE(IC=2 mA) = 0.95 (typ.), meaning gain variation across its operating current range is minimal. In Class-A amplifier designs, this directly reduces second-harmonic distortion without requiring emitter resistors or feedback networks-simplifying biasing and improving SNR in sensor front-ends where HN1C01FE-GR,LF is commonly deployed.

Can HN1C01FE-GR,LF be used in a differential pair configuration?

Yes. HN1C01FE-GR,LF integrates two matched NPN transistors (Q1 and Q2) in one ES6 package with symmetrical electrical characteristics (hFE, VCE(sat), fT). Its pinout-Emitter1/Base1/Collector2/Emitter2/Base2/Collector1-supports direct implementation of emitter-coupled differential pairs with shared emitter current source, minimizing layout-induced mismatches that degrade CMRR in HN1C01FE-GR,LF-based analog circuits.

What is the maximum allowable ambient temperature for continuous operation of HN1C01FE-GR,LF?

HN1C01FE-GR,LF has a storage temperature range of −55 °C to +150 °C and a junction temperature limit of 150 °C. With PC = 100 mW (total) and thermal resistance θJA ≈ 250 °C/W (estimated for ES6 on 1-layer FR4), continuous operation at Ta > 85 °C requires PCB copper area or airflow to maintain Tj < 150 °C. Derating curves in the HN1C01FE-GR,LF datasheet confirm safe operation up to 100 °C ambient with appropriate thermal design.

Is the ES6 package of HN1C01FE-GR,LF compatible with standard reflow profiles?

Yes. HN1C01FE-GR,LF uses a lead-free (LF) finish and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1, permitting unlimited floor life and compatibility with standard Pb-free reflow profiles (peak 260 °C, 30 sec max). The ES6 package's 2.1 × 1.6 mm footprint and gull-wing leads support automated optical inspection and high-yield placement-critical for HN1C01FE-GR,LF integration into automotive production lines.