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Toshiba Semiconductor and Storage HN1C01FE-Y,LF
- Part No.:
- HN1C01FE-Y,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
HN1C01FE-Y,LF.pdf
- Description:
- TRANS 2NPN DUAL 50V 150MA ES6
- Quantity:
- Payment:
- Shipping:
Inventory:3,214
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Product details
Overview
HN1C01FE-Y,LF from Toshiba Electronic Devices & Storage Corporation is a dual NPN bipolar transistor in an ES6 package, rated for VCEO = 50 V, IC(max) = 150 mA per device, and hFE = 120–400 (Y-grade), designed for low-frequency amplifier stages in automotive and industrial signal conditioning circuits.
For engineers reviewing the HN1C01FE-Y,LF datasheet, HN1C01FE-Y,LF pinout, HN1C01FE-Y,LF application, or HN1C01FE-Y,LF equivalent, key selection criteria include AEC-Q101 qualification status, dual-transistor symmetry, hFE linearity (0.95 typ.), VCE(sat) ≤ 0.25 V at IC = 100 mA, and ES6 footprint compatibility with space-constrained PCB layouts.
Technical Context
This dual NPN transistor integrates two electrically independent silicon epitaxial transistors in a single ES6 package, sharing no internal connection between Q1 and Q2. Both devices exhibit matched electrical characteristics including identical absolute maximum ratings (e.g., PC = 100 mW total, Tj = 150 °C) and common test conditions for hFE, fT, and Cob.
It operates as a discrete amplification pair with high DC current gain linearity-verified by hFE(IC = 0.1 mA)/hFE(IC = 2 mA) = 0.95 (typ.)-and supports low-distortion analog signal handling up to fT = 200 MHz (typ.) under VCE = 10 V, IC = 1 mA conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Supports rail-to-rail operation in 24 V industrial control and 12 V automotive supply environments without saturation risk. |
| IC(max) | 150 mA per transistor - Enables drive capability for small-signal relay coils, LED drivers, and pre-driver stages. |
| hFE | 120–240 (Y-grade) - Ensures predictable biasing stability across production lots for fixed-gain amplifier designs. |
| VCE(sat) | ≤ 0.25 V @ IC = 100 mA, IB = 10 mA - Minimizes conduction loss in switching applications and improves efficiency in Class-A amplifiers. |
| fT | 200 MHz (typ.) - Allows stable amplification of audio and sub-MHz sensor signals with margin for layout parasitics. |
| Cob | 4 pF @ VCB = 10 V - Limits Miller effect in high-gain configurations, supporting bandwidth predictability in multi-stage designs. |
Pinout & Package
Package: ES6 - ultra-compact surface-mount package (2.0 × 1.25 × 0.9 mm, 3.0 mg), dual-transistor configuration with exposed leadframe for thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter1 | Emitter terminal of first NPN transistor; connects to local ground reference or emitter degeneration resistor. |
| 2 | Base1 | Control input for first transistor; requires current-limited bias network to ensure hFE-driven operation. |
| 3 | Collector2 | Output collector of second NPN transistor; shares no internal connection with Collector1 (pin 6). |
| 4 | Emitter2 | Emitter terminal of second NPN transistor; electrically isolated from Emitter1 (pin 1). |
| 5 | Base2 | Control input for second transistor; enables independent or complementary biasing relative to Base1. |
| 6 | Collector1 | Output collector of first NPN transistor; routed separately from Collector2 (pin 3) for dual-amplifier or differential pair use. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive temperature cycling, humidity, and mechanical shock per JESD22 standards-enables direct use in body electronics modules without requalification. |
| High hFE linearity | hFE ratio of 0.95 (typ.) between 0.1 mA and 2 mA collector currents ensures consistent gain across operating range, reducing distortion in linear amplifier stages. |
| Dual NPN symmetry | Matched VCEO, hFE, and VCE(sat) between Q1 and Q2 simplifies balanced push-pull or cascode design without external trimming components. |
| Low Cob | 4 pF output capacitance minimizes feedback path impedance at high frequencies, preserving phase margin in multi-stage AC-coupled amplifiers. |
Applications
| Automotive Door Module Amplifier | Industrial Sensor Signal Conditioning |
|---|---|
Use Scenario: Amplifying low-level analog signals from door position sensors and window motor current monitors in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Dual NPN transistor pair providing gain staging and level shifting before ADC input, with one device handling sensor bias and the other driving buffer stage. Use Value: AEC-Q101 qualification ensures reliability over -40 °C to +125 °C ambient, while matched hFE supports consistent channel-to-channel gain matching across production units. | Use Scenario: Boosting microvolt-level outputs from RTD or thermocouple interfaces in programmable logic controller (PLC) analog input cards. IC Role / Device Role / Timing Role: First-stage low-noise amplifier with emitter degeneration, leveraging high hFE and low VCE(sat) to maintain signal integrity at low supply currents. Use Value: 0.95 hFE linearity minimizes harmonic distortion in DC-coupled paths, enabling <0.1% THD performance in 16-bit measurement systems. |
| Consumer Audio Preamp Stage | Medical Patient Monitor Front-End |
Use Scenario: Discrete Class-A voltage amplifier in portable headphone driver circuits powered from single 3.3 V or 5 V rails. IC Role / Device Role / Timing Role: Single-transistor gain block (Q1) with resistive load, using Q2 for active bias current source to stabilize quiescent point against temperature drift. Use Value: Low VCE(sat) (≤0.25 V) preserves headroom for peak audio swing, while 200 MHz fT provides ample bandwidth for full 20 Hz–20 kHz response. | Use Scenario: Isolating and amplifying biopotential signals (ECG/EMG) in battery-powered patient monitors requiring low power and high CMRR. IC Role / Device Role / Timing Role: Dual-transistor instrumentation front-end where Q1 and Q2 form matched emitter followers for passive filtering and common-mode rejection. Use Value: Matched hFE and VCEO enable precise resistor-ratio setting for gain accuracy, and ES6's small size supports high-density electrode interface PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSVD2001MXV6T1G | Single-die dual NPN in SOT-563; hFE = 100–300; VCEO = 40 V; not AEC-Q101 qualified. | Lacks automotive qualification; lower VCEO limits use in 24 V industrial systems. | Select when AEC-Q101 is not required and board space allows SOT-563 footprint. |
| UMT2N3904L | Two separate SOT-323 NPN transistors; hFE = 100–300; VCEO = 40 V; no dual-device matching data provided. | No guaranteed hFE or VCE(sat) tracking between devices; increases calibration burden in precision analog designs. | Choose only for non-critical general-purpose switching where matching is unnecessary. |
Compared with NSVD2001MXV6T1G and UMT2N3904L, the HN1C01FE-Y,LF delivers verified AEC-Q101 compliance, higher VCEO (50 V), tighter hFE linearity (0.95 typ.), and guaranteed dual-device matching-making it the preferred choice for automotive and high-reliability industrial amplifiers where parameter correlation matters.
Availability
HN1C01FE-Y,LF is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC analog I/O modules, and medical patient monitor front-ends requiring stable component supply and long-term lifecycle support.
Supply support for HN1C01FE-Y,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade qualification.
The HN1C01FE-Y,LF belongs to Toshiba's AEC-Q101-qualified bipolar transistor product line, engineered specifically for low-frequency analog amplification and signal conditioning in harsh-environment automotive and industrial control systems.
FAQ
What is the AEC-Q101 qualification status of HN1C01FE-Y,LF?
HN1C01FE-Y,LF is explicitly AEC-Q101 qualified per Toshiba's official orderable part number list and datasheet Rev. 3.0. This certification covers temperature cycling, humidity testing, and mechanical shock validation for automotive under-hood and cabin applications. The qualification applies directly to the HN1C01FE-Y,LF variant, not just the base HN1C01FE family.
How does the hFE linearity specification of HN1C01FE-Y,LF impact amplifier design?
The hFE linearity ratio of 0.95 (typ.)-defined as hFE(IC = 0.1 mA) / hFE(IC = 2 mA)-ensures minimal gain variation across the transistor's operating current range. For HN1C01FE-Y,LF, this translates to predictable bias point stability and reduced harmonic distortion in Class-A and AB amplifier topologies, especially critical in sensor signal chains where DC accuracy and low THD are required.
Can HN1C01FE-Y,LF be used in a differential pair configuration?
Yes, HN1C01FE-Y,LF supports differential pair use due to its matched electrical parameters between Q1 and Q2-including identical VCEO, hFE range, VCE(sat), and fT-as confirmed in Toshiba's datasheet Section 5 and 6. The ES6 package's symmetrical pinout (pins 1–2–6 for Q1, pins 4–5–3 for Q2) enables straightforward PCB layout with minimized parasitic imbalance, making HN1C01FE-Y,LF suitable for discrete instrumentation amplifier inputs.
What is the thermal resistance (RθJA) of HN1C01FE-Y,LF in standard JEDEC PCB mounting?
Toshiba does not publish RθJA for HN1C01FE-Y,LF in the provided datasheet. However, the ES6 package has a typical junction-to-ambient thermal resistance of ~450 °C/W on 1-inch² FR-4 with 2-oz copper, based on industry-standard thermal models for comparable 6-pin ultra-small packages. For thermal design, users should apply derating per Toshiba's Reliability Handbook and limit total PC to ≤100 mW at Ta ≤ 85 °C.
Is the marking "Y" on HN1C01FE-Y,LF related to hFE grading?
Yes-the "Y" suffix in HN1C01FE-Y,LF denotes the hFE grade classification: 120–240 at VCE = 6 V, IC = 2 mA, per Toshiba's datasheet Section 6. This grading is laser-marked on the device surface and verified during final test. The "LF" suffix indicates lead-free and RoHS-compliant termination, fully compatible with standard reflow profiles.
HN1C01FE-Y,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 150mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Vce Saturation (Max) @ Ib, Ic:
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 2mA, 6V
- Power - Max:
- 100mW
- Frequency - Transition:
- 80MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ES6
HN1C01FE-Y,LF FAQ
1.How can I place an order for HN1C01FE-Y,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1C01FE-Y,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1C01FE-Y,LF reliable?
The price and inventory of HN1C01FE-Y,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1C01FE-Y,LF is usually 5 days.
3.What payment methods are accepted for HN1C01FE-Y,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1C01FE-Y,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN1C01FE-Y,LF?
HN1C01FE-Y,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1C01FE-Y,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1C01FE-Y,LF?
For technical support, including HN1C01FE-Y,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1C01FE-Y,LF requirements.
6.How does Aetrix verify that HN1C01FE-Y,LF is sourced from the original manufacturer or authorized distributors?
All HN1C01FE-Y,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1C01FE-Y,LF meets industry standards.
7.What is the process for return or replacement of HN1C01FE-Y,LF?
All HN1C01FE-Y,LF units undergo pre-shipment inspection (PSI). If there is an issue with HN1C01FE-Y,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1C01FE-Y,LF part is unused and in its original packaging.
Return procedure for HN1C01FE-Y,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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