Toshiba Semiconductor and Storage HN1C01FE-Y,LXHF

Overview

HN1C01FE-Y,LXHF from Toshiba Electronic Devices & Storage Corporation is a dual NPN bipolar transistor in an ES6 package, rated for VCEO = 50 V, IC(max) = 150 mA per transistor, and hFE = 120–400 (Y-grade), designed for low-frequency amplifier stages in automotive and industrial signal conditioning circuits.

For engineers reviewing the HN1C01FE-Y,LXHF datasheet, HN1C01FE-Y,LXHF pinout, HN1C01FE-Y,LXHF application, or HN1C01FE-Y,LXHF equivalent, key selection criteria include AEC-Q101 qualification, dual-transistor symmetry, hFE linearity (0.95 typ.), VCE(sat) ≤ 0.25 V at IC = 100 mA, and ES6 footprint compatibility with space-constrained PCB layouts.

Technical Context

This device integrates two matched silicon NPN epitaxial transistors in a single compact ES6 package, sharing no internal connection between channels-each transistor operates independently with identical absolute maximum ratings and electrical characteristics. Its design supports discrete amplifier pairs, differential preamplifiers, and current mirror configurations where gain matching and thermal coupling are critical.

The HN1C01FE-Y,LXHF is specified for operation across Ta = –55°C to +150°C, with junction temperature limited to 150°C and total package power dissipation of 100 mW. It exhibits excellent hFE linearity ([email protected] / hFE@2mA = 0.95 typ.) and fT = 2 MHz (typ.), confirming suitability for audio and sensor-signal amplification below 1 MHz.

Key Specifications

Pinout & Package

Package: ES6 - ultra-compact surface-mount dual-transistor package (3.0 mg typ., 1.6 × 2.8 × 1.05 mm), optimized for high-density automotive and portable electronics layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Compared with NSV60511MUT1G and UMT2N7002KTCR, the HN1C01FE-Y,LXHF delivers superior hFE linearity and dual-NPN integration in the smallest footprint, making it optimal for space-constrained, low-noise analog amplification where bipolar gain behavior is essential.

Availability

HN1C01FE-Y,LXHF is available at Aetrix Electronics and suitable for automotive cabin electronics, industrial sensor interfaces, and low-power analog front-ends requiring stable component supply and AEC-Q101 compliance.

Supply support for HN1C01FE-Y,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for automotive, industrial, and consumer applications.

The HN1C01FE-Y,LXHF belongs to Toshiba's AEC-Q101-qualified bipolar transistor family, engineered specifically for robust, low-frequency analog signal amplification in harsh-environment electronics.

FAQ

What does the "Y" suffix in HN1C01FE-Y,LXHF indicate?

The "Y" suffix denotes the hFE gain classification band: 120–240 at VCE = 6 V and IC = 2 mA. This grading ensures predictable DC bias point stability in amplifier designs. The full orderable part number HN1C01FE-Y,LXHF confirms both Y-grade hFE and lead-free, halogen-free (LXHF) packaging compliance per RoHS directives.

Is HN1C01FE-Y,LXHF pin-compatible with other ES6 dual-transistor devices?

HN1C01FE-Y,LXHF uses the standard ES6 pinout (E1-B1-C2-E2-B2-C1), matching Toshiba's ES6-packaged dual transistors like HN1C02FE. However, electrical parameters-including hFE range, VCE(sat), and fT-differ across variants; always verify datasheet specifications before substitution.

Does HN1C01FE-Y,LXHF support operation at 125°C ambient temperature?

Yes. HN1C01FE-Y,LXHF is rated for Ta = –55°C to +150°C and Tj(max) = 150°C. At Ta = 125°C, derated collector current must remain ≤100 mA to maintain PC ≤ 100 mW and avoid exceeding junction temperature limits-refer to Fig. 8.7 (PC vs. Ta) in the official datasheet.

How is the AEC-Q101 qualification verified for HN1C01FE-Y,LXHF?

HN1C01FE-Y,LXHF is explicitly marked "YES" for AEC-Q101 qualification in Toshiba's official orderable part number table. Qualification includes stress testing per AEC-Q101 Rev. D: HTOL, TC, UHAST, ESD-HBM/MM, and mechanical shock-validating reliability for automotive under-hood use cases.

Can HN1C01FE-Y,LXHF be used in a current mirror configuration?

Yes. The matched hFE, VCE(sat), and thermal coupling in the monolithic ES6 package make HN1C01FE-Y,LXHF well-suited for precision current mirrors. Designers should use identical base-emitter biasing and minimize layout asymmetry to preserve <±5% current matching across temperature and signal range.