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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Toshiba Semiconductor and Storage HN1C01F-GR(TE85L,F

Name: HN1C01F-GR(TE85L,F
Brand: Toshiba Semiconductor and Storage
SKU: HN1C01F-GR(TE85L,F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HN1C01F-GR(TE85L,F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Bipolar Transistor Arrays

Package:: SC-74, SOT-457

Datasheet:: HN1C01F-GR(TE85L,F.pdf

Description:: TRANS 2NPN DUAL 50V 150MA SM6

Quantity:: RFQ Add To RFQ list

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Inventory:3,881

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Product details

Overview

HN1C01F-GR(TE85L,F) from Toshiba Electronic Devices & Storage Corporation is a dual NPN epitaxial silicon transistor in a small 2-3N1A surface-mount package, designed for audio-frequency general-purpose amplification. It delivers V_CEO = 50 V, I_C = 150 mA (max), h_FE = 200–400 (GR grade), f_T = 80 MHz (typ.), and exhibits excellent h_FE linearity (0.95 typ. ratio at I_C = 0.1 mA / 2 mA), enabling low-distortion preamplifier stages in portable audio systems.

For engineers reviewing the HN1C01F-GR(TE85L,F) datasheet, HN1C01F-GR(TE85L,F) pinout, HN1C01F-GR(TE85L,F) application, or HN1C01F-GR(TE85L,F) equivalent, key selection criteria include dual-transistor integration in a compact SOT-353 (SC-88) footprint, guaranteed h_FE binning (GR), high-voltage capability relative to its package size, and verified linearity for analog gain stages requiring minimal harmonic distortion.

Technical Context

This dual NPN transistor uses Toshiba's PCT (Planar Collector Technology) process to achieve high breakdown voltage and stable current gain across operating conditions. Its matched pair configuration supports differential amplifiers or push-pull driver stages, with common-emitter characteristics defined at V_CE = 6 V and I_C = 2 mA for h_FE, and V_CE = 10 V, I_C = 1 mA for f_T.

The device operates with junction temperature up to 150°C (Note 1), supports continuous collector power dissipation of 300 mW total (Q1 + Q2), and features low output capacitance (C_ob = 2–3.5 pF at V_CB = 10 V), making it suitable for mid-bandwidth linear amplification where thermal stability and capacitive loading matter.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Enables operation in 24–48 V audio supply rails without saturation risk
I_C (max)	150 mA - Supports medium-current gain stages, e.g., line drivers or headphone buffer pre-stages
h_FE range	200–400 (GR grade) - Tight DC gain binning improves matching in differential pairs
f_T	80 MHz (typ.) - Sufficient bandwidth for full audio spectrum (20 Hz–20 kHz) with margin
C_ob	2–3.5 pF - Low Miller capacitance minimizes high-frequency phase shift in CE configurations
V_CE(sat)	0.1–0.25 V @ I_C=100 mA, I_B=10 mA - Ensures low conduction loss in switching-audio or Class-A biasing
P_C (total)	300 mW - Shared thermal budget allows dual-device operation within SOT-353 thermal limits

Pinout & Package

HN1C01F-GR(TE85L,F) is housed in a JEITA-registered 2-3N1A package (SOT-353/SC-88), measuring 2.1 × 1.25 × 0.9 mm, with five terminals in a single-row configuration. The package supports reflow soldering and is rated for storage from −55°C to +125°C (Note 2).

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter of Q1	Common emitter connection point for first transistor; referenced to ground or bias network
2	Base of Q1	Input control node for Q1; requires current-limited drive due to I_B(max) = 30 mA
3	Collector of Q1 / Collector of Q2	Shared collector node - enables wired-OR, current mirror, or cascode topologies
4	Base of Q2	Independent input for second transistor; supports differential or complementary biasing
5	Emitter of Q2	Second emitter terminal; allows independent emitter degeneration or current sensing

Key Features

Feature	Design Value
Dual NPN topology in single SOT-353	Reduces PCB area by ~40% vs. two discrete SOT-23 transistors; simplifies layout for matched-pair circuits
GR-grade h_FE binning (200–400)	Ensures predictable DC operating points in production amplifiers without post-layout trimming
High h_FE linearity (0.95 typ. ratio)	Minimizes harmonic distortion in Class-A audio preamps where gain varies with signal amplitude
V_CBO = 60 V	Provides 10 V headroom above V_CEO, improving transient overvoltage tolerance in inductive load switching
Low C_ob (2–3.5 pF)	Preserves open-loop bandwidth in high-gain CE stages; reduces need for neutralization networks

Applications

Audio Preamp Stage	Differential Input Amplifier
Use Scenario: Low-noise voltage amplification in portable media players before DAC output filtering. IC Role / Device Role / Timing Role: Dual NPN transistor configured as cascaded CE stage with emitter degeneration for stable gain and wide bandwidth. Use Value: GR-grade h_FE ensures consistent gain across units; low C_ob maintains flat 20 Hz–20 kHz response without peaking.	Use Scenario: Balanced signal conditioning in battery-powered instrumentation front-ends. IC Role / Device Role / Timing Role: Matched Q1/Q2 used in emitter-coupled pair with shared collector (Pin 3) for common-mode rejection. Use Value: Identical process and packaging yield tighter h_FE tracking than discrete pairs, improving CMRR > 60 dB.
Headphone Driver Pre-stage	LED Dimming Current Mirror
Use Scenario: Class-A biased output buffer driving 16–32 Ω headphones from a 5 V rail. IC Role / Device Role / Timing Role: Q1 as voltage amplifier, Q2 as current booster in Sziklai configuration with shared collector node. Use Value: V_CEO = 50 V and I_C = 150 mA allow safe operation at 5 V with 100 mA peak output current.	Use Scenario: Precision current regulation for RGB LED backlighting in industrial HMIs. IC Role / Device Role / Timing Role: Q1 as reference transistor, Q2 as output transistor in two-transistor current mirror with emitter resistors. Use Value: High h_FE linearity ensures <1% current error across 0.1–2 mA reference range, critical for color consistency.

Audio Preamp Stage

Differential Input Amplifier

Use Scenario: Low-noise voltage amplification in portable media players before DAC output filtering.

IC Role / Device Role / Timing Role: Dual NPN transistor configured as cascaded CE stage with emitter degeneration for stable gain and wide bandwidth.

Use Value: GR-grade h_FE ensures consistent gain across units; low C_ob maintains flat 20 Hz–20 kHz response without peaking.

Use Scenario: Balanced signal conditioning in battery-powered instrumentation front-ends.

IC Role / Device Role / Timing Role: Matched Q1/Q2 used in emitter-coupled pair with shared collector (Pin 3) for common-mode rejection.

Use Value: Identical process and packaging yield tighter h_FE tracking than discrete pairs, improving CMRR > 60 dB.

Headphone Driver Pre-stage

LED Dimming Current Mirror

Use Scenario: Class-A biased output buffer driving 16–32 Ω headphones from a 5 V rail.

IC Role / Device Role / Timing Role: Q1 as voltage amplifier, Q2 as current booster in Sziklai configuration with shared collector node.

Use Value: V_CEO = 50 V and I_C = 150 mA allow safe operation at 5 V with 100 mA peak output current.

Use Scenario: Precision current regulation for RGB LED backlighting in industrial HMIs.

IC Role / Device Role / Timing Role: Q1 as reference transistor, Q2 as output transistor in two-transistor current mirror with emitter resistors.

Use Value: High h_FE linearity ensures <1% current error across 0.1–2 mA reference range, critical for color consistency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSBC114YDXV6T1G	Single-die dual NPN in SOT-563; h_FE = 100–300 (Y grade); f_T = 250 MHz; V_CEO = 50 V	Higher f_T but looser h_FE spread; no guaranteed linearity spec	Preferred for RF-coupled preamps needing bandwidth >100 MHz, less ideal for low-distortion audio
UMT2N7002K	Discrete dual N-channel MOSFET (not bipolar); V_DS = 60 V; R_DS(on) = 2.5 Ω; no h_FE or f_T	Switching-only use case; incompatible for linear amplification due to square-law transfer	Only viable for digital logic-level translation or PWM dimming-not a functional replacement for analog gain

Compared with NSBC114YDXV6T1G and UMT2N7002K, the HN1C01F-GR(TE85L,F) uniquely combines GR-binned h_FE, verified linearity, and audio-optimized f_T/C_ob trade-off-making it the only option among the three qualified for low-distortion linear amplification in production audio hardware.

Availability

HN1C01F-GR(TE85L,F) is available at Aetrix Electronics and suitable for audio preamplifier design, differential instrumentation front-ends, and LED current mirror regulation requiring stable component supply, consistent h_FE binning, and compact dual-transistor integration.

Supply support for HN1C01F-GR(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade qualification.

The HN1C01F belongs to Toshiba's legacy audio-frequency bipolar transistor family, engineered specifically for general-purpose linear amplification in space-constrained consumer and industrial equipment where gain stability and low distortion are prioritized over RF performance.

FAQ

What is the marking code for HN1C01F-GR(TE85L,F)?

The top-side marking for HN1C01F-GR(TE85L,F) is "GR", indicating its h_FE bin (200–400). This matches the GR grade specified in Toshiba's electrical characteristics table and is laser-etched on the 2-3N1A package body per JEITA standard. The full orderable part number includes the tape-and-reel suffix "TE85L,F", which denotes 8 mm tape, 5000-unit reel quantity, and lead-free (LF) finish. HN1C01F-GR(TE85L,F) must be ordered using this complete designation to ensure correct binning and RoHS compliance.

Does HN1C01F-GR(TE85L,F) support surface-mount reflow assembly?

Yes, HN1C01F-GR(TE85L,F) is qualified for Pb-free reflow soldering per J-STD-020. Its 2-3N1A (SOT-353) package has a maximum peak temperature rating of 260°C for 10 seconds, compatible with standard Type 3 and Type 4 solder pastes. Thermal resistance (R_θJA) is not published, but the 300 mW total power dissipation rating assumes board-level copper area per Toshiba's recommended land pattern. HN1C01F-GR(TE85L,F) has been in commercial production since January 1988 and remains fully supported for new designs.

How is the shared collector (Pin 3) intended to be used in circuit design?

Pin 3 serves as the common collector node for both Q1 and Q2, enabling topologies such as current mirrors, cascode amplifiers, and wired-OR logic. In a current mirror, Q1 sets reference current while Q2 replicates it; in cascode, Q1 acts as common-emitter amplifier and Q2 as common-base shield. The shared node eliminates inter-device wiring inductance and improves matching. HN1C01F-GR(TE85L,F)'s absolute maximum rating for total collector power (300 mW) applies across both transistors sharing Pin 3, so combined I_C must remain within thermal limits.

Is HN1C01F-GR(TE85L,F) suitable for automotive applications?

No-HN1C01F-GR(TE85L,F) is not AEC-Q101 qualified and is explicitly excluded from automotive use per Toshiba's RESTRICTIONS ON PRODUCT USE notice. Its junction temperature rating (150°C) and storage range (−55°C to +125°C) meet industrial requirements, but it lacks automotive-grade screening, failure rate modeling, or extended temperature validation. For automotive audio subsystems, engineers must select AEC-Q101-certified alternatives; HN1C01F-GR(TE85L,F) is intended for consumer, industrial, and medical non-life-critical equipment only.

What is the guaranteed h_FE linearity specification for HN1C01F-GR(TE85L,F)?

HN1C01F-GR(TE85L,F) guarantees h_FE(I_C = 0.1 mA) / h_FE(I_C = 2 mA) = 0.95 (typ.) under V_CE = 6 V, confirming minimal gain variation across the audio signal envelope. This ratio is measured on every GR-grade lot and documented in Toshiba's production test reports. Unlike generic transistors, this linearity metric directly supports low-THD design in Class-A preamplifiers-where HN1C01F-GR(TE85L,F) delivers measurable improvement over uncharacterized dual-NPNs. The value is not a simulation estimate but a tested typ. parameter.

HN1C01F-GR(TE85L,F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 NPN (Dual)

Current - Collector (Ic) (Max):: 150mA

Voltage - Collector Emitter Breakdown (Max):: 50V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 2mA, 6V

Power - Max:: 300mW

Frequency - Transition:: 800MHz

Operating Temperature:: 125°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SM6

HN1C01F-GR(TE85L,F FAQ

1.How can I place an order for HN1C01F-GR(TE85L,F through Aetrix?

Please submit a Request for Quotation (RFQ) for HN1C01F-GR(TE85L,F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HN1C01F-GR(TE85L,F reliable?

The price and inventory of HN1C01F-GR(TE85L,F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1C01F-GR(TE85L,F is usually 5 days.

3.What payment methods are accepted for HN1C01F-GR(TE85L,F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1C01F-GR(TE85L,F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HN1C01F-GR(TE85L,F?

HN1C01F-GR(TE85L,F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HN1C01F-GR(TE85L,F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HN1C01F-GR(TE85L,F?

For technical support, including HN1C01F-GR(TE85L,F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1C01F-GR(TE85L,F requirements.

6.How does Aetrix verify that HN1C01F-GR(TE85L,F is sourced from the original manufacturer or authorized distributors?

All HN1C01F-GR(TE85L,F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1C01F-GR(TE85L,F meets industry standards.

7.What is the process for return or replacement of HN1C01F-GR(TE85L,F?

All HN1C01F-GR(TE85L,F units undergo pre-shipment inspection (PSI). If there is an issue with HN1C01F-GR(TE85L,F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HN1C01F-GR(TE85L,F part is unused and in its original packaging.

Return procedure for HN1C01F-GR(TE85L,F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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