Toshiba Semiconductor and Storage HN1C01FU-GR,LF

Overview

HN1C01FU-GR,LF from Toshiba Electronic Devices & Storage Corporation is a dual NPN bipolar transistor in US6 package, rated for VCEO = 50 V, IC(max) = 150 mA per device, and hFE = 200–400 (GR grade), designed for low-frequency amplifier stages in automotive signal conditioning circuits.

For engineers reviewing the HN1C01FU-GR,LF datasheet, HN1C01FU-GR,LF pinout, HN1C01FU-GR,LF application, or HN1C01FU-GR,LF equivalent, key selection factors include AEC-Q101 qualification, dual-transistor symmetry, hFE linearity (0.95 typ.), and US6 footprint compatibility with space-constrained PCB layouts.

Technical Context

This dual NPN transistor integrates two electrically independent silicon epitaxial transistors in a single US6 package, sharing no internal connection between Q1 and Q2. Each transistor supports common-emitter operation with VCEO = 50 V and fT = 80 MHz (typ.) at IC = 1 mA.

It features matched hFE characteristics across both devices (GR grade: 200–400), excellent hFE linearity ([email protected] / hFE@2mA = 0.95 typ.), and low VCE(sat) = 0.25 V max at IC = 100 mA/IB = 10 mA - enabling stable gain and minimal distortion in analog amplification.

Key Specifications

Pinout & Package

HN1C01FU-GR,LF uses the US6 surface-mount package (6-pin, 2.1 mm × 1.8 mm × 0.9 mm, 6.8 mg), optimized for automated assembly and thermal performance on FR4 boards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Compared with NSVD2001MXV6T1G and UMT2N3904L, HN1C01FU-GR,LF delivers higher voltage tolerance (50 V), guaranteed AEC-Q101 compliance, and factory-matched hFE - making it uniquely suitable for automotive signal chains where reliability, gain consistency, and thermal robustness are critical.

Availability

HN1C01FU-GR,LF is available at Aetrix Electronics and suitable for automotive cabin electronics, industrial sensor interfaces, and low-frequency audio amplification requiring stable component supply and long-term lifecycle assurance.

Supply support for HN1C01FU-GR,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for automotive, industrial, and consumer systems, with global manufacturing and quality certification infrastructure.

HN1C01FU-GR,LF belongs to Toshiba's AEC-Q101-qualified bipolar transistor family, engineered specifically for space-efficient, thermally robust signal amplification in harsh-environment automotive ECUs and industrial control units.

FAQ

What does the "GR" suffix indicate in HN1C01FU-GR,LF?

The "GR" suffix denotes the hFE gain bin: 200–400 at VCE = 6 V and IC = 2 mA. This higher-gain classification ensures tighter DC bias control and improved signal-to-noise ratio in low-current amplifier stages compared to the Y-bin (120–240). HN1C01FU-GR,LF maintains this specification across both integrated transistors.

Is HN1C01FU-GR,LF suitable for automotive applications?

Yes - HN1C01FU-GR,LF is explicitly AEC-Q101 qualified per Toshiba's orderable part number documentation. It meets stress testing requirements for temperature cycling, humidity bias, and mechanical shock, making it appropriate for under-hood and cabin electronics where reliability is mandated.

How does the US6 package of HN1C01FU-GR,LF compare to SOT-363?

HN1C01FU-GR,LF uses the US6 package (2.1 mm × 1.8 mm), which is dimensionally identical to JEDEC-standard SOT-363 and shares the same pinout (1:E1, 2:B1, 3:C2, 4:E2, 5:B2, 6:C1). This allows direct drop-in replacement in existing SOT-363 footprints without layout changes.

What is the maximum operating junction temperature for HN1C01FU-GR,LF?

The absolute maximum junction temperature (Tj) for HN1C01FU-GR,LF is 150 °C, with a storage temperature range of −55 °C to +150 °C. Derating is required above 25 °C ambient; at Ta = 70 °C, the usable collector power dissipation drops to ~120 mW per transistor based on FR4 board thermal data.

Does HN1C01FU-GR,LF support common-emitter and emitter-follower configurations?

Yes - each NPN transistor in HN1C01FU-GR,LF supports standard configurations: common-emitter for voltage gain, emitter-follower for impedance buffering, and common-base for high-frequency isolation. Pin assignments allow independent biasing of Q1 and Q2, enabling mixed-mode topologies on a single die.