Toshiba Semiconductor and Storage HN1C01FU-GR,LXHF

Overview

HN1C01FU-GR,LXHF from Toshiba Electronic Devices & Storage Corporation is a dual NPN bipolar transistor in US6 package, rated for VCEO = 50 V, IC(max) = 150 mA per device, and hFE = 200–400 (GR grade), designed for low-frequency amplifier stages in automotive-grade signal conditioning circuits.

For engineers reviewing the HN1C01FU-GR,LXHF datasheet, HN1C01FU-GR,LXHF pinout, HN1C01FU-GR,LXHF application, or HN1C01FU-GR,LXHF equivalent, key selection factors include AEC-Q101 qualification, dual-transistor symmetry, hFE linearity (0.95 typ.), and US6 footprint compatibility with space-constrained PCB layouts.

Technical Context

This dual NPN transistor integrates two electrically isolated silicon epitaxial devices in a single US6 package, sharing no internal connection between channels. Each transistor supports independent biasing with identical absolute maximum ratings: VCEO = 50 V, IC = 150 mA, PC = 200 mW, and Tj = 150 °C.

Electrical behavior is characterized at Ta = 25 °C with guaranteed hFE classification GR (200–400), fT = 2 MHz (typ.), VCE(sat) = 0.25 V (max) at IC = 100 mA/IB = 10 mA, and Cob = 3.5 pF at VCB = 10 V - confirming suitability for linear amplification rather than RF or switching applications.

Key Specifications

Pinout & Package

Package: US6 - surface-mount, 6-pin dual-inline plastic package (6.8 mg typ.), footprint compatible with JEDEC TO-236AB outline, optimized for automated placement and thermal dissipation on FR4 boards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Compared with NSVT1200001ZT1G and UMT2N7002KTCR, the HN1C01FU-GR,LXHF uniquely delivers AEC-Q101-certified dual NPN functionality with 50 V/150 mA ratings and verified hFE linearity - making it irreplaceable in automotive sensor front-ends and precision industrial amplifiers requiring matched transistor pairs.

Availability

HN1C01FU-GR,LXHF is available at Aetrix Electronics and suitable for automotive cabin electronics, industrial temperature sensing, low-power audio preamplification, and legacy relay interface circuits requiring stable component supply and long-lifecycle support.

Supply support for HN1C01FU-GR,LXHF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures power semiconductors, discrete devices, and analog ICs with emphasis on reliability, efficiency, and automotive-grade qualification.

The HN1C01FU series belongs to Toshiba's legacy bipolar transistor product line, engineered specifically for low-frequency linear amplification and signal conditioning in automotive and industrial environments where AEC-Q101 compliance and parameter consistency are mandatory.

FAQ

What is the AEC-Q101 qualification status of HN1C01FU-GR,LXHF?

HN1C01FU-GR,LXHF is explicitly AEC-Q101 qualified, as confirmed in Toshiba's orderable part number table. This certification covers temperature cycling, mechanical shock, and high-temperature operating life testing per AEC-Q101 Rev. D, validating its use in automotive cabin modules and under-hood control units where ambient temperatures reach −40 °C to +125 °C.

Does HN1C01FU-GR,LXHF support dual independent amplifier channels?

Yes, HN1C01FU-GR,LXHF contains two fully isolated NPN transistors in one US6 package. Pin 1/2/6 form the first transistor (E1/B1/C1); pins 3/4/5 form the second (C2/E2/B2). No internal connection exists between them, enabling true dual-channel operation such as differential pair or cascaded gain stages without cross-talk.

What does the "GR" suffix indicate in HN1C01FU-GR,LXHF?

The "GR" suffix denotes the hFE gain bin: 200–400 at VCE = 6 V and IC = 2 mA. This is distinct from the "Y" bin (120–240). The GR grade ensures tighter hFE distribution for improved matching in dual-channel designs and greater predictability in bias-sensitive amplifier circuits.

Can HN1C01FU-GR,LXHF replace single-transistor SOT-23 devices in existing designs?

HN1C01FU-GR,LXHF cannot serve as a drop-in replacement for single-transistor SOT-23 parts due to its 6-pin US6 footprint and dual topology. However, it can consolidate two SOT-23 NPNs into one package - provided PCB layout accommodates the US6 pad pattern and routing isolates both transistor channels per the pinout (e.g., C1 ≠ C2).

What is the maximum allowable power dissipation for HN1C01FU-GR,LXHF?

HN1C01FU-GR,LXHF has a total package power dissipation limit of 200 mW when mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.32 mm² × 6). Derating is required above Ta = 25 °C - approximately 1.6 mW/°C reduction beyond 25 °C - to maintain junction temperature ≤150 °C.