Toshiba Semiconductor and Storage HN1C01FU-Y,LF

Overview

HN1C01FU-Y,LF from Toshiba Electronic Devices & Storage Corporation is a dual NPN bipolar transistor in US6 package, designed for low-frequency amplification with VCEO = 50 V, IC(max) = 150 mA per transistor, and hFE = 120–400 (Y-grade). It serves as a matched-pair gain stage in automotive audio preamps and sensor signal conditioning circuits.

For engineers reviewing the HN1C01FU-Y,LF datasheet, HN1C01FU-Y,LF pinout, HN1C01FU-Y,LF application, or HN1C01FU-Y,LF equivalent, key selection criteria include AEC-Q101 qualification, dual-transistor symmetry, hFE linearity (0.95 typ.), and US6 footprint compatibility with space-constrained PCB layouts.

Technical Context

This device integrates two electrically isolated silicon NPN epitaxial transistors in a single US6 surface-mount package. Both transistors share identical absolute maximum ratings-including VCBO = 60 V, PC = 200 mW (FR4 board), and Tj(max) = 150 °C-and exhibit matched electrical characteristics under common test conditions (VCE = 6 V, IC = 2 mA).

Its high hFE linearity ([email protected] mA / hFE@2 mA = 0.95 typ.) enables stable small-signal gain across bias currents, while fT = 80 MHz (typ.) supports operation up to low-VHF frequencies. The dual configuration eliminates inter-device tracking variance in differential or push-pull amplifier topologies.

Key Specifications

Pinout & Package

HN1C01FU-Y,LF uses the US6 surface-mount package (6-pin, 0.65 mm pitch, 1.6 mm × 2.9 mm body), optimized for automated assembly and thermal dissipation on FR4 boards (PC = 200 mW, Tj ≤ 150 °C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Compared with NSVD2003MXV6T1G and UMX2NTR, HN1C01FU-Y,LF uniquely balances AEC-Q101 compliance, 150 mA current capability, and high hFE linearity-making it optimal for automotive signal amplification where gain stability and reliability are co-critical.

Availability

HN1C01FU-Y,LF is available at Aetrix Electronics and suitable for automotive audio preamps, industrial sensor signal conditioning, and low-power relay driver circuits requiring stable component supply and long-term lifecycle support.

Supply support for HN1C01FU-Y,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components, with core expertise in power devices, logic ICs, and discrete transistors for automotive and industrial markets.

HN1C01FU-Y,LF belongs to Toshiba's AEC-Q101-qualified dual-transistor family, engineered specifically for space-constrained, high-stability analog signal paths in automotive infotainment and body electronics.

FAQ

What is the AEC-Q101 qualification status of HN1C01FU-Y,LF?

HN1C01FU-Y,LF is explicitly AEC-Q101 qualified, as confirmed in Toshiba's orderable part number table. This certification covers temperature cycling, humidity testing, and mechanical shock validation for automotive under-hood and cabin applications. The qualification applies directly to the HN1C01FU-Y,LF variant-not just the base HN1C01FU-ensuring full compliance for production use in automotive ECUs and infotainment systems.

Does HN1C01FU-Y,LF support dual-transistor matched-pair operation?

Yes, HN1C01FU-Y,LF integrates two electrically isolated NPN transistors with tightly matched hFE, VBE, and Cob characteristics. Its datasheet confirms identical electrical specs for both transistors under common test conditions (VCE = 6 V, IC = 2 mA), enabling true differential pair or cascode configurations without external matching components-critical for HN1C01FU-Y,LF-based instrumentation amplifier front-ends.

What is the maximum allowable collector power dissipation for HN1C01FU-Y,LF?

HN1C01FU-Y,LF has a total collector power dissipation (PC) rating of 200 mW when mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm with 0.32 mm² Cu pads). This value assumes Ta = 25 °C and accounts for thermal coupling between both transistors. Derating is required above 25 °C ambient, with junction temperature limited to 150 °C-verified in HN1C01FU-Y,LF's thermal curves and reliability documentation.

How does the hFE linearity specification impact circuit design using HN1C01FU-Y,LF?

The hFE linearity ratio of 0.95 (typ.)-defined as hFE at IC = 0.1 mA divided by hFE at IC = 2 mA-ensures minimal gain variation across bias currents. In HN1C01FU-Y,LF-based sensor interfaces, this translates to <5 % gain error over four decades of collector current, eliminating need for dynamic bias compensation and simplifying calibration in battery-powered industrial transmitters.

What is the marking code for HN1C01FU-Y,LF on the US6 package?

HN1C01FU-Y,LF is marked with "2026" on the top surface of the US6 package, per Toshiba's revision-controlled marking scheme. This 4-digit date code corresponds to the 2026 calendar year and aligns with Rev. 4.0 of the official datasheet. No additional alphanumeric suffix appears on the device; the "Y" grade designation is internal to Toshiba's sorting process and not physically marked.