Toshiba Semiconductor and Storage HN1C01FU-Y(T5L,F,T

Overview

HN1C01FU-Y(T5L,F) from Toshiba Electronic Devices & Storage Corporation is a dual NPN bipolar transistor in US6 package, rated for VCEO = 50 V, IC(max) = 150 mA per device, and hFE = 120–400 (Y-grade), designed for low-frequency amplifier stages in automotive and industrial signal conditioning circuits.

For engineers reviewing the HN1C01FU-Y(T5L,F) datasheet, HN1C01FU-Y(T5L,F) pinout, HN1C01FU-Y(T5L,F) application, or HN1C01FU-Y(T5L,F) equivalent, key selection criteria include AEC-Q101 qualification status, dual-transistor symmetry, hFE linearity (0.95 typ.), fT = 80 MHz, and US6 thermal derating on FR4 (200 mW total).

Technical Context

This dual NPN transistor integrates two electrically independent silicon epitaxial devices in a single US6 leadframe package. Both transistors share identical absolute maximum ratings (VCEO = 50 V, IC = 150 mA, PC = 200 mW) and electrical characteristics (hFE = 120–400, fT = 80 MHz, VCE(sat) = 0.25 V at IC = 100 mA/IB = 10 mA).

The device supports matched-pair operation with excellent hFE linearity ([email protected] mA / hFE@2 mA = 0.95 typ.) and low Cob = 3.5 pF, enabling stable gain and minimal interstage coupling distortion in discrete amplifier topologies.

Key Specifications

Pinout & Package

Package: US6 - 6-pin ultra-small surface-mount package (2.1 × 1.8 × 0.9 mm), weight 6.8 mg, optimized for high-density PCB layouts and automotive under-hood space constraints.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Compared with NSVT1200001ZT1G and UMT1N, the HN1C01FU-Y(T5L,F) delivers superior hFE linearity and integrated dual topology in an AEC-Q101-qualified US6 package-critical for space-constrained, low-distortion automotive amplifiers where board real estate and thermal management are limiting factors.

Availability

HN1C01FU-Y(T5L,F) is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial current-loop drivers, and low-frequency audio pre-amplifiers requiring stable component supply and AEC-Q101 assurance.

Supply support for HN1C01FU-Y(T5L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with focus on automotive, industrial, and consumer applications.

The HN1C01FU-Y(T5L,F) belongs to Toshiba's AEC-Q101-qualified bipolar transistor family, engineered specifically for high-reliability, low-frequency analog signal processing in harsh-environment automotive and industrial control systems.

FAQ

What does the "Y" suffix in HN1C01FU-Y(T5L,F) indicate?

The "Y" suffix denotes the hFE classification grade for the HN1C01FU-Y(T5L,F): hFE = 120–240 at VCE = 6 V and IC = 2 mA. This grading ensures predictable DC current gain for biasing stability in production designs. The full orderable part number HN1C01FU-Y(T5L,F) confirms RoHS-compliant, lead-free, and automotive-qualified (AEC-Q101) manufacturing per Toshiba's specification Rev.4.0.

Is HN1C01FU-Y(T5L,F) pin-compatible with other US6 dual transistors?

HN1C01FU-Y(T5L,F) uses the standard US6 pinout (1:E1, 2:B1, 3:C2, 4:E2, 5:B2, 6:C1), matching industry-standard dual NPN layouts. However, pin compatibility alone does not guarantee functional equivalence-electrical parameters like hFE range, fT, and Cob differ across manufacturers. Always verify bias point stability and gain margin when substituting HN1C01FU-Y(T5L,F) in existing US6 footprints.

Does HN1C01FU-Y(T5L,F) support operation at 125 °C junction temperature?

Yes, HN1C01FU-Y(T5L,F) is AEC-Q101 qualified and rated for Tj = −55 °C to +150 °C. Its absolute maximum junction temperature is 150 °C, and storage temperature extends to −55 °C to +125 °C. For sustained 125 °C operation, thermal design must limit PC to ≤ 120 mW using the derating curve in Toshiba's Rev.4.0 datasheet (Fig. 8.7).

What is the significance of hFE linearity (0.95 typ.) in HN1C01FU-Y(T5L,F)?

The hFE linearity ratio-hFE at IC = 0.1 mA divided by hFE at IC = 2 mA-is 0.95 typical for HN1C01FU-Y(T5L,F). This indicates minimal gain variation across its operating current range, directly reducing harmonic distortion in Class-A amplifiers and improving accuracy in precision current mirrors. It reflects tight process control in Toshiba's epitaxial NPN fabrication.

Can HN1C01FU-Y(T5L,F) be used in switching applications?

HN1C01FU-Y(T5L,F) supports switching use with VCE(sat) = 0.25 V at IC = 100 mA/IB = 10 mA and fT = 80 MHz, but it is optimized for linear amplification. For high-speed switching (>1 MHz), dedicated switching transistors with lower Cob and faster turn-off times are preferred. In low-frequency (<100 kHz) relay or LED driving, HN1C01FU-Y(T5L,F) performs reliably with proper base drive design.