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Toshiba Semiconductor and Storage HN1C01FYTE85LF
- Part No.:
- HN1C01FYTE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays
- Package:
- SC-74, SOT-457
- Datasheet:
-
HN1C01FYTE85LF.pdf
- Description:
- TRANS 2NPN DUAL 50V 150MA SM6
- Quantity:
- Payment:
- Shipping:
Inventory:3,236
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Product details
Overview
HN1C01FYTE85LF from Toshiba Electronic Devices & Storage Corporation is a dual NPN epitaxial silicon transistor in a small 2-3N1A surface-mount package, rated for VCEO = 50 V, IC = 150 mA (max), and hFE = 120–400. It delivers high-voltage audio-frequency amplification with excellent hFE linearity (0.95 typ.) and fT = 80 MHz, used in compact preamplifier stages and signal buffering circuits.
For engineers reviewing the HN1C01FYTE85LF datasheet, HN1C01FYTE85LF pinout, HN1C01FYTE85LF application, or HN1C01FYTE85LF equivalent, key selection criteria include dual-transistor configuration, guaranteed hFE linearity at low currents, VCEO/VCEO derating per Note 2, Cob = 2–3.5 pF, and LF(T)-suffixed thermal rating compliance (Tj = 125°C, Tstg = −55 to 125°C).
Technical Context
This dual NPN transistor shares common emitter-base-collector terminals across both elements (Q1/Q2 common), enabling matched-pair operation in differential or push-pull configurations. Its PCT process ensures stable hFE across IC = 0.1–2 mA, supporting low-distortion small-signal amplification.
The device operates with VCBO = 60 V, VCE(sat) = 0.1–0.25 V at IC = 100 mA/IB = 10 mA, and Cob = 2–3.5 pF at VCB = 10 V - parameters critical for high-fidelity audio coupling and RF bypass stability in compact layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - supports rail-to-rail audio stage operation up to ±25 V supply without breakdown |
| IC (max) | 150 mA - enables drive capability for low-power speaker drivers or active filters |
| hFE | 120–400 - provides gain flexibility across bias points; Y/G binning ensures predictable DC operating point |
| fT | 80 MHz - maintains bandwidth beyond audio range, suitable for ultrasonic sensor front-ends |
| Cob | 2–3.5 pF - minimizes Miller effect in common-emitter gain stages, preserving high-frequency response |
| Tj (Note 2) | 125°C - defines maximum junction temperature under continuous LF(T)-compliant operation |
| Package | 2-3N1A - 3-pin SOT-323 dual-transistor footprint with 0.65 mm pitch and 0.015 g mass |
Pinout & Package
HN1C01FYTE85LF uses the JEITA-compliant 2-3N1A package: a 3-terminal dual NPN transistor in SOT-323 outline with common emitter connection. Pin 1 = Collector (Q1), Pin 2 = Base (Q1/Q2 shared), Pin 3 = Collector (Q2); emitter terminals are internally bonded to substrate and accessible only via PCB pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Collector of Q1 | Primary output node for first transistor; requires heatsinking above 50 mW dissipation |
| Pin 2 | Shared base of Q1 and Q2 | Enables synchronized biasing; must be driven with low-impedance source to avoid crosstalk |
| Pin 3 | Collector of Q2 | Independent output node for second transistor; allows differential pair or cascode topology |
Key Features
| Feature | Design Value |
|---|---|
| High hFE linearity | hFE(0.1 mA)/hFE(2 mA) = 0.95 typ. - reduces harmonic distortion in Class-A preamp stages |
| Dual matched NPN topology | Q1/Q2 share base and emitter reference - simplifies differential amplifier layout and trimming |
| Low Cob | 2–3.5 pF at 10 V - improves stability in high-gain CE configurations without neutralization |
| LF(T)-rated thermal profile | Tj = 125°C / Tstg = −55 to 125°C - ensures reliability in consumer-grade reflow and automotive cabin environments |
Applications
| Audio Preamp Stage | Signal Level Shifter |
|---|---|
Use Scenario: Low-noise voltage amplification of microphone or piezoelectric sensor outputs before ADC sampling. IC Role / Device Role / Timing Role: Dual NPN configured as cascode pair to extend bandwidth while suppressing Miller capacitance. Use Value: hFE linearity and fT = 80 MHz enable THD < 0.5% at 20 kHz with 10 kΩ source impedance. | Use Scenario: Translating 3.3 V logic signals to 5 V or 12 V rails in mixed-voltage interface boards. IC Role / Device Role / Timing Role: Common-emitter switch with shared base control for synchronized level translation. Use Value: VCEO = 50 V and IC = 150 mA support robust drive into 1 kΩ loads with < 100 ns propagation delay. |
| Differential Input Buffer | Compact Active Filter |
Use Scenario: Balanced input conditioning for analog front-ends in portable medical sensors. IC Role / Device Role / Timing Role: Matched Q1/Q2 operated as emitter-coupled pair with common emitter resistor. Use Value: hFE matching and Cob symmetry reduce common-mode gain drift over temperature (±2% typical). | Use Scenario: Second-order low-pass filtering in battery-powered IoT node signal chains. IC Role / Device Role / Timing Role: Dual NPN implementing transconductance-based integrator and gain stage. Use Value: PC* = 300 mW total dissipation allows continuous operation at 1.5 Vpp input with 100 kHz cutoff. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN general-purpose amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HN1C03FYTE85LF | Higher hFE (200–600), same package and VCEO/IC ratings | Better suited for ultra-low-bias current designs where gain >300 is required at IC < 1 mA | Select when higher DC gain stability at microamp bias is needed; otherwise identical footprint and thermal behavior |
| UMX2N (ROHM) | Same 2-3N1A package, but hFE = 80–200, VCEO = 50 V, fT = 180 MHz | Superior high-frequency response but lower gain linearity (no published hFE ratio spec) | Prefer for RF-coupled audio or wideband buffer use; avoid where hFE linearity dominates distortion budget |
Compared with HN1C01FYTE85LF, HN1C03FYTE85LF offers extended hFE range for precision biasing, while UMX2N trades gain linearity for higher fT - making HN1C01FYTE85LF optimal for low-distortion audio preamplification where consistent hFE vs. IC is critical.
Availability
HN1C01FYTE85LF is available at Aetrix Electronics and suitable for audio preamplifier modules, portable sensor interface designs, and compact active filter implementations requiring stable component supply, consistent hFE binning, and LF(T)-compliant thermal performance.
Supply support for HN1C01FYTE85LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for industrial, consumer, and automotive applications.
HN1C01FYTE85LF belongs to Toshiba's legacy PCT-process dual-transistor family, engineered specifically for space-constrained, low-distortion audio-frequency amplification with guaranteed hFE linearity and thermal robustness.
FAQ
What is the pin configuration of HN1C01FYTE85LF?
HN1C01FYTE85LF uses a 3-pin 2-3N1A package: Pin 1 is Collector of Q1, Pin 2 is the shared Base of both transistors, and Pin 3 is Collector of Q2. Emitters are internally common and connected to the substrate pad. This configuration supports cascode, differential, or independent dual-amplifier topologies without external emitter wiring.
Does HN1C01FYTE85LF support dual independent transistor operation?
HN1C01FYTE85LF supports semi-independent operation: collectors are isolated (Pins 1 and 3), and the base is shared (Pin 2). While full independence requires external base resistors, the matched hFE and Cob characteristics allow effective use in differential pairs or cascaded stages where synchronized biasing improves PSRR and common-mode rejection.
What does the "LF" suffix in HN1C01FYTE85LF indicate?
The "LF" suffix in HN1C01FYTE85LF denotes compliance with Toshiba's LF(T) thermal specification: maximum junction temperature Tj = 125°C and storage temperature range Tstg = −55 to 125°C. This reflects tighter thermal derating versus non-LF variants and confirms suitability for lead-free reflow profiles and extended ambient operation.
How is hFE linearity specified for HN1C01FYTE85LF?
HN1C01FYTE85LF specifies hFE linearity as the ratio hFE(IC = 0.1 mA) / hFE(IC = 2 mA) = 0.95 (typ.). This metric quantifies gain consistency across bias currents - critical for minimizing harmonic distortion in Class-A audio amplifiers - and is measured under standardized VCE = 6 V conditions per Toshiba's Electrical Characteristics table.
Can HN1C01FYTE85LF replace single-transistor SOT-23 devices in existing designs?
HN1C01FYTE85LF cannot directly replace single-transistor SOT-23 devices due to its dual-transistor topology and shared base. However, it can consolidate two adjacent transistors in space-constrained layouts - provided the circuit accommodates common-base drive and substrate-connected emitters. Layout revision is required to route Pin 2 as shared base and verify thermal dissipation within PC* = 300 mW total limit.
HN1C01FYTE85LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 150mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Vce Saturation (Max) @ Ib, Ic:
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 2mA, 6V
- Power - Max:
- 300mW
- Frequency - Transition:
- 80MHz
- Operating Temperature:
- 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SM6
HN1C01FYTE85LF FAQ
1.How can I place an order for HN1C01FYTE85LF through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1C01FYTE85LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1C01FYTE85LF reliable?
The price and inventory of HN1C01FYTE85LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1C01FYTE85LF is usually 5 days.
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4.How is shipping managed for HN1C01FYTE85LF?
HN1C01FYTE85LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1C01FYTE85LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1C01FYTE85LF?
For technical support, including HN1C01FYTE85LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1C01FYTE85LF requirements.
6.How does Aetrix verify that HN1C01FYTE85LF is sourced from the original manufacturer or authorized distributors?
All HN1C01FYTE85LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1C01FYTE85LF meets industry standards.
7.What is the process for return or replacement of HN1C01FYTE85LF?
All HN1C01FYTE85LF units undergo pre-shipment inspection (PSI). If there is an issue with HN1C01FYTE85LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1C01FYTE85LF part is unused and in its original packaging.
Return procedure for HN1C01FYTE85LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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