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Toshiba Semiconductor and Storage HN1C03F-B(TE85L,F)
- Part No.:
- HN1C03F-B(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays
- Package:
- SC-74, SOT-457
- Datasheet:
-
HN1C03F-B(TE85L,F).pdf
- Description:
- TRANS 2NPN DUAL 20V 300MA SM6
- Quantity:
- Payment:
- Shipping:
Inventory:3,676
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Product details
Overview
HN1C03F-B(TE85L,F) from Toshiba is a dual NPN epitaxial transistor in SM6 package, designed for audio muting and signal switching applications. It features VEBO = 25 V (min), RON = 1 Ω (typ. at IB = 5 mA), reverse hFE = 150 (typ. at VCE = −2 V, IC = −4 mA), and fT = 30 MHz - enabling fast, low-loss analog switching in compact consumer audio systems.
For engineers reviewing the HN1C03F-B(TE85L,F) datasheet, HN1C03F-B(TE85L,F) pinout, HN1C03F-B(TE85L,F) application, or HN1C03F-B(TE85L,F) equivalent, key selection criteria include dual-NPN configuration, SM6 6-pin package compatibility, guaranteed VEBO ≥ 25 V, low saturation voltage (VCE(sat) = 0.042 V typ.), and verified reverse hFE performance for bidirectional switching roles.
Technical Context
This dual transistor integrates two identical NPN devices sharing common emitter-base and collector-base ratings, optimized for low-voltage analog signal routing. Its PCT process ensures stable hFE (200–1200) and low Cob = 4.8 pF (typ.), supporting clean audio path isolation with minimal capacitive crosstalk.
Designed for muting in portable audio amplifiers and switching in telephony interface circuits, it operates reliably up to Tj = 150°C with PC = 300 mW total dissipation. The 160 ns turn-on time and 130 ns fall time confirm suitability for sub-microsecond switching in line-level signal paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Device Type | Dual NPN silicon epitaxial transistor, PCT process |
| VEBO (min) | 25 V - enables safe operation with ±15 V audio rails and transient suppression |
| VCEO | 20 V - supports standard line-level and headphone amplifier output stages |
| RON (typ.) | 1 Ω at IB = 5 mA - ensures <10 mV insertion loss in 10 kΩ signal paths |
| fT | 30 MHz - preserves bandwidth up to 20 kHz with margin for harmonic content |
| VCE(sat) (typ.) | 0.042 V at IC = 30 mA, IB = 3 mA - minimizes power dissipation during on-state |
| Cob (typ.) | 4.8 pF at VCB = 10 V - limits capacitive feedthrough in high-impedance mute nodes |
Pinout & Package
Package: SM6 (Super Mini 6-lead, surface-mount, 1.6 × 2.8 × 1.1 mm, 0.65 mm pitch).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of Q1 | Common reference node for first transistor; tied to ground or bias rail in muting configurations |
| 2 | Base of Q1 | Control input for Q1; driven by logic or op-amp output to enable/disable signal path |
| 3 | Collector of Q1 | Signal input/output terminal for Q1; connects to audio source or load in series-switch topology |
| 4 | Collector of Q2 | Signal input/output terminal for Q2; used for complementary or differential mute paths |
| 5 | Base of Q2 | Independent control input for Q2; allows asynchronous or mirrored switching of second path |
| 6 | Emitter of Q2 | Second emitter node; may be tied to Q1 emitter or biased separately for differential operation |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN monolithic pair | Enables matched muting of stereo channels or redundant signal paths without component pairing |
| High VEBO (25 V min) | Prevents E-B junction breakdown during hot-plug events or DC offset transients in audio interfaces |
| Low RON (1 Ω typ.) | Reduces thermal drift and insertion loss in battery-powered portable audio devices |
| Reverse hFE = 150 (typ.) | Supports reliable emitter-follower or inverted-switch operation when used in bidirectional signal routing |
| SM6 footprint | Provides 6-terminal compact layout for space-constrained PCBs while maintaining thermal separation |
Applications
| Audio Muting in Portable Amplifiers | Telephony Line Switching |
|---|---|
Use Scenario: Muting speaker output during power-up/down or mode transitions in Bluetooth speakers and headphone amps. IC Role / Device Role / Timing Role: Dual-NPN switch placing series-connected collectors between amplifier output and speaker load. Use Value: Eliminates pop/click artifacts via sub-200 ns turn-on and <100 mV VCE(sat), preserving signal integrity. | Use Scenario: Isolating analog voice lines during call setup or DTMF tone generation in VoIP handsets. IC Role / Device Role / Timing Role: Bidirectional analog switch controlling tip/ring continuity using reverse hFE capability. Use Value: Achieves <−60 dB off-isolation at 3 kHz with <1 Ω on-resistance, meeting ITU-T P.56 requirements. |
| Compact Stereo Channel Control | Low-Voltage Signal Routing |
Use Scenario: Independent left/right channel muting in mini-DIN or USB-C audio docks with shared supply rails. IC Role / Device Role / Timing Role: Two matched NPNs in single SM6 package, each handling one channel's signal path. Use Value: Reduces board area by 40% vs. discrete SOT-363 solutions while maintaining hFE tracking within ±15%. | Use Scenario: Routing sensor signals (<5 Vpp) in wearables where supply headroom is limited to 3.3 V. IC Role / Device Role / Timing Role: Low-VCEO (20 V) NPN used as active switch in rail-to-rail signal path with 0.61 V VBE. Use Value: Enables full-swing switching down to 0.5 V supply with guaranteed turn-on at IB ≥ 100 µA. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HN1C01F-B(TE85L,F) | Lower fT = 15 MHz; same SM6 package and VEBO = 25 V; hFE min = 120 | Suitable for ≤10 kHz audio paths only; not recommended for wideband or DTMF applications | Select when cost sensitivity outweighs bandwidth need and VCE(sat) < 0.05 V remains critical |
| UMX2N (ROHM) | Same SM6 footprint; higher VCEO = 50 V; lower RON = 0.7 Ω; no specified reverse hFE | Better for higher-voltage industrial I/O; lacks verified reverse-mode gain for bidirectional use | Choose for robustness in 24 V systems but verify alternate control topology if reverse hFE required |
Compared with HN1C03F-B(TE85L,F), HN1C01F-B(TE85L,F) trades bandwidth for lower cost in narrowband audio, while UMX2N offers higher voltage tolerance but omits reverse hFE validation - making HN1C03F-B(TE85L,F) uniquely suited for precision bidirectional analog switching under 20 V.
Availability
HN1C03F-B(TE85L,F) is available at Aetrix Electronics and suitable for audio muting, telephony line switching, and compact stereo channel control requiring stable component supply across consumer electronics production cycles.
Supply support for HN1C03F-B(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for consumer, industrial, and automotive markets.
HN1C03F-B(TE85L,F) belongs to Toshiba's legacy PCT-process bipolar transistor family, engineered specifically for low-distortion analog signal switching in space-constrained portable audio equipment.
FAQ
What is the maximum continuous collector current rating for HN1C03F-B(TE85L,F)?
HN1C03F-B(TE85L,F) has an absolute maximum IC rating of 300 mA per transistor, with total package power dissipation limited to 300 mW. This rating applies under Ta = 25°C with proper PCB copper area; derating is required above 25°C ambient per Toshiba's reliability guidelines.
Does HN1C03F-B(TE85L,F) support bidirectional signal switching?
Yes - HN1C03F-B(TE85L,F) specifies reverse hFE = 150 (typ.) at VCE = −2 V and IC = −4 mA, confirming validated performance in inverted-mode operation. This enables true bidirectional analog switching without external circuit reconfiguration.
What is the typical transition frequency (fT) of HN1C03F-B(TE85L,F)?
The typical transition frequency fT of HN1C03F-B(TE85L,F) is 30 MHz, measured at VCE = 6 V and IC = 4 mA. This provides sufficient gain-bandwidth product to maintain flat response through the full 20 Hz–20 kHz audio band with margin.
Is HN1C03F-B(TE85L,F) RoHS compliant?
HN1C03F-B(TE85L,F) complies with EU RoHS Directive 2011/65/EU. Toshiba confirms lead-free termination and halogen-free molding compound; full compliance documentation is available upon request from Aetrix Electronics or directly from Toshiba's environmental portal.
What does the "B" suffix indicate in HN1C03F-B(TE85L,F)?
The "B" suffix in HN1C03F-B(TE85L,F) denotes hFE classification B (350–1200) per Toshiba's datasheet Note, distinguishing it from "A" grade (200–700). This ensures higher minimum current gain for consistent switching behavior across temperature and voltage variations.
HN1C03F-B(TE85L,F) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 300mA
- Voltage - Collector Emitter Breakdown (Max):
- 20V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 350 @ 4mA, 2V
- Power - Max:
- 300mW
- Frequency - Transition:
- 30MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SM6
HN1C03F-B(TE85L,F) FAQ
1.How can I place an order for HN1C03F-B(TE85L,F) through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1C03F-B(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1C03F-B(TE85L,F) reliable?
The price and inventory of HN1C03F-B(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1C03F-B(TE85L,F) is usually 5 days.
3.What payment methods are accepted for HN1C03F-B(TE85L,F)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1C03F-B(TE85L,F) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN1C03F-B(TE85L,F)?
HN1C03F-B(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1C03F-B(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1C03F-B(TE85L,F)?
For technical support, including HN1C03F-B(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1C03F-B(TE85L,F) requirements.
6.How does Aetrix verify that HN1C03F-B(TE85L,F) is sourced from the original manufacturer or authorized distributors?
All HN1C03F-B(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1C03F-B(TE85L,F) meets industry standards.
7.What is the process for return or replacement of HN1C03F-B(TE85L,F)?
All HN1C03F-B(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with HN1C03F-B(TE85L,F), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1C03F-B(TE85L,F) part is unused and in its original packaging.
Return procedure for HN1C03F-B(TE85L,F):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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