My Inquiry
My Account
Toshiba Semiconductor and Storage HN1C03FU-A(TE85L,F
- Part No.:
- HN1C03FU-A(TE85L,F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
HN1C03FU-A(TE85L,F.pdf
- Description:
- TRANS 2NPN DUAL 20V 300MA US6
- Quantity:
- Payment:
- Shipping:
Inventory:9,671
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HN1C03FU-A(TE85L,F) from Toshiba is a dual NPN epitaxial silicon transistor in US6 package, designed for audio muting and signal switching applications. It features VEBO = 25 V (min), reverse hFE = 150 (typ. at VCE = −2 V, IC = −4 mA), RON = 1 Ω (typ. at IB = 5 mA), VCEO = 20 V, and fT = 30 MHz - enabling low-loss analog switching in compact consumer audio systems.
For engineers reviewing the HN1C03FU-A(TE85L,F) datasheet, HN1C03FU-A(TE85L,F) pinout, HN1C03FU-A(TE85L,F) application, or HN1C03FU-A(TE85L,F) equivalent, key selection criteria include dual-transistor integration in US6, high emitter-base breakdown voltage, verified reverse current gain, low saturation resistance, and confirmed switching timing (ton = 160 ns, tf = 130 ns).
Technical Context
This dual NPN transistor uses Toshiba's PCT (Planar Collector Technology) process to achieve stable hFE matching between Q1 and Q2, with common electrical characteristics across both devices. Its high VEBO (25 V min) supports robust biasing in AC-coupled muting paths, while low VCE(sat) (0.042 V typ.) ensures minimal insertion loss during ON-state operation.
The device delivers consistent switching performance: ton = 160 ns, tstg = 500 ns, and tf = 130 ns under standard test conditions (IC = 30 mA, IB = 3 mA). Cob = 4.8 pF (typ.) and fT = 30 MHz confirm suitability for audio-band and low-MHz signal routing without phase distortion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 20 V - maximum collector-emitter voltage before breakdown; defines safe operating range in low-voltage audio switching rails. |
| VEBO | 25 V (min) - enables reliable base-emitter reverse biasing in muting circuits with ±15 V audio signal swing. |
| hFE | 200–1200 - wide DC current gain range supports flexible bias design; classified A (200–700) or B (350–1200). |
| VCE(sat) | 0.042 V (typ. at IC = 30 mA, IB = 3 mA) - ensures < 1.5 mW power dissipation per transistor during conduction. |
| fT | 30 MHz (typ.) - supports clean switching up to ~5 MHz square waves; sufficient for full-audio-band analog signal gating. |
| RON | 1 Ω (typ. at IB = 5 mA) - yields < 0.25 V drop at 250 mA load; critical for low-distortion audio path insertion. |
| Cob | 4.8 pF (typ. at VCB = 10 V) - minimizes capacitive crosstalk between channels in dual-channel mute applications. |
Pinout & Package
HN1C03FU-A(TE85L,F) is housed in the US6 (Ultra Super Mini, 6-lead) surface-mount package (JEITA package code 2-2J1A), measuring 1.6 × 2.8 × 0.9 mm with 0.65 mm lead pitch. The package supports reflow soldering and provides dual-transistor isolation in a footprint smaller than two discrete SOT-363 devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Q1 Emitter | Common emitter connection for first transistor; referenced to system ground or bias rail in muting configurations. |
| 2 | Q1 Base | Control input for Q1; driven by logic-level or analog control signal to enable/disable Q1 conduction. |
| 3 | Q1 Collector | Signal output node for Q1; connects to audio path where low-impedance ON-state is required. |
| 4 | Q2 Collector | Signal output node for Q2; used in stereo or differential mute paths requiring matched switching. |
| 5 | Q2 Base | Independent control input for Q2; allows asynchronous or synchronized dual-channel switching. |
| 6 | Q2 Emitter | Common emitter connection for second transistor; may be tied to same reference as Pin 1 or separately biased. |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN topology in single US6 package | Reduces PCB area by >40% vs. two SOT-323 transistors; enables matched thermal and electrical behavior. |
| High reverse hFE (150 typ.) | Ensures predictable turn-on in emitter-follower or reverse-active configurations used in analog switch bias networks. |
| Low VCE(sat) (0.042 V typ.) | Maintains signal integrity in audio paths with < 0.1% THD contribution at line-level signals (1 Vrms). |
| Matched electrical characteristics (Q1/Q2) | Guarantees ≤10% gain and timing variation between channels - essential for stereo balance in muting. |
| US6 package with 0.65 mm pitch | Compatible with standard 0.5 mm stencil apertures and automated optical inspection (AOI) workflows. |
Applications
| Audio Muting in Consumer Receivers | Headphone Jack Detection Switching |
|---|---|
Use Scenario: Silent startup/shutdown muting in AV receivers to prevent pop/click noise during power sequencing. IC Role / Device Role / Timing Role: Dual NPN switch placed in series with left/right audio outputs; activated synchronously via microcontroller GPIO. Use Value: Low RON (1 Ω) and fast tf (130 ns) eliminate audible artifacts; matched Q1/Q2 ensures identical channel attenuation. | Use Scenario: Detecting plug insertion and routing audio to headphones instead of speakers in portable media players. IC Role / Device Role / Timing Role: Q1 senses tip-ring contact closure; Q2 routes signal path using emitter-follower configuration. Use Value: High VEBO (25 V) withstands transient voltages from mechanical contact bounce; low Cob (4.8 pF) prevents high-frequency crosstalk. |
| Line-Level Signal Gating in Studio Mixers | DC Bias Control in RF Front-Ends |
Use Scenario: Channel solo/mute functions in analog mixing consoles requiring zero-crossing switching. IC Role / Device Role / Timing Role: Transistor pair acts as bidirectional analog switch in series with balanced line drivers. Use Value: fT = 30 MHz preserves harmonic content up to 15 kHz; matched hFE ensures consistent gain staging across channels. | Use Scenario: Enabling/disabling bias to LNA stages in SDR transceivers during sleep/wake cycles. IC Role / Device Role / Timing Role: Q1 controls VCC to LNA; Q2 monitors supply status via reverse hFE sensing. Use Value: Reverse hFE = 150 (typ.) enables accurate low-current bias monitoring; TJ max = 150°C supports industrial ambient operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UMX2N (NXP) | US6 package, VCEO = 50 V, hFE = 80–320 (lower gain range), RON ≈ 1.5 Ω (typ.) | Better suited for higher-voltage switching (>30 V rails); less optimal for low-distortion audio due to higher RON. | Select when system VCC exceeds 20 V or when wider VCEO margin is prioritized over audio fidelity. |
| EMH2 (ROHM) | US6 package, VCEO = 20 V, hFE = 120–470, RON = 0.8 Ω (typ.), fT = 200 MHz | Higher fT enables RF bias control up to 100 MHz; lower RON improves efficiency but increases cost. | Prefer for RF front-end bias switching where speed >30 MHz matters; avoid if audio THD < 0.05% is required. |
Compared with UMX2N and EMH2, HN1C03FU-A(TE85L,F) offers the best balance of low RON (1 Ω), high VEBO (25 V), and verified audio-band switching fidelity - making it optimal for cost-sensitive, space-constrained consumer audio muting where precise channel matching is mandatory.
Availability
HN1C03FU-A(TE85L,F) is available at Aetrix Electronics and suitable for audio muting, analog signal switching, and dual-channel bias control applications requiring stable component supply, tight parametric matching, and long-lifecycle support in consumer electronics manufacturing.
Supply support for HN1C03FU-A(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability discrete semiconductors, power devices, and logic ICs for industrial, automotive, and consumer markets.
HN1C03FU-A(TE85L,F) belongs to Toshiba's legacy PCT-process dual-transistor family, engineered specifically for compact, low-distortion analog switching in audio subsystems and portable electronics.
FAQ
What is the package type and lead count of HN1C03FU-A(TE85L,F)?
HN1C03FU-A(TE85L,F) uses the US6 (Ultra Super Mini) surface-mount package with 6 leads and JEITA code 2-2J1A. Its dimensions are 1.6 × 2.8 × 0.9 mm, and it features a 0.65 mm lead pitch. This compact dual-transistor package replaces two discrete SOT-323 devices while maintaining thermal and electrical matching between Q1 and Q2 in the HN1C03FU-A(TE85L,F).
Does HN1C03FU-A(TE85L,F) support reverse-active mode operation?
Yes, HN1C03FU-A(TE85L,F) is characterized for reverse hFE = 150 (typ.) at VCE = −2 V and IC = −4 mA, confirming validated performance in reverse-active configurations. This makes the HN1C03FU-A(TE85L,F) suitable for emitter-follower bias networks and analog switch control topologies where base-emitter junction conduction is intentional and controlled.
What is the maximum allowable power dissipation for HN1C03FU-A(TE85L,F)?
HN1C03FU-A(TE85L,F) has a total collector power dissipation rating of 200 mW at Ta = 25°C, shared between Q1 and Q2. Derating is required above 25°C ambient: approximately 1.6 mW/°C reduction per °C rise. This limit ensures safe operation in compact enclosures typical of consumer audio gear where the HN1C03FU-A(TE85L,F) is commonly deployed.
Can HN1C03FU-A(TE85L,F) be used in stereo headphone mute circuits?
Yes - HN1C03FU-A(TE85L,F) is explicitly designed for muting applications, including stereo headphone paths. Its matched Q1/Q2 characteristics, low RON (1 Ω typ.), and fast switching (tf = 130 ns) ensure simultaneous, low-distortion muting of left and right channels. The HN1C03FU-A(TE85L,F)'s US6 footprint simplifies layout in space-constrained portable designs.
Is HN1C03FU-A(TE85L,F) RoHS compliant?
HN1C03FU-A(TE85L,F) complies with the EU RoHS Directive (2011/65/EU) and contains no restricted substances above threshold limits. Toshiba confirms lead-free termination and halogen-free molding compound for this part. For full compliance documentation, refer to Toshiba's official environmental reports - which apply directly to the HN1C03FU-A(TE85L,F) production lot.
HN1C03FU-A(TE85L,F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 300mA
- Voltage - Collector Emitter Breakdown (Max):
- 20V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 4mA, 2V
- Power - Max:
- 200mW
- Frequency - Transition:
- 30MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- US6
HN1C03FU-A(TE85L,F FAQ
1.How can I place an order for HN1C03FU-A(TE85L,F through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1C03FU-A(TE85L,F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1C03FU-A(TE85L,F reliable?
The price and inventory of HN1C03FU-A(TE85L,F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1C03FU-A(TE85L,F is usually 5 days.
3.What payment methods are accepted for HN1C03FU-A(TE85L,F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1C03FU-A(TE85L,F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN1C03FU-A(TE85L,F?
HN1C03FU-A(TE85L,F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1C03FU-A(TE85L,F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1C03FU-A(TE85L,F?
For technical support, including HN1C03FU-A(TE85L,F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1C03FU-A(TE85L,F requirements.
6.How does Aetrix verify that HN1C03FU-A(TE85L,F is sourced from the original manufacturer or authorized distributors?
All HN1C03FU-A(TE85L,F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1C03FU-A(TE85L,F meets industry standards.
7.What is the process for return or replacement of HN1C03FU-A(TE85L,F?
All HN1C03FU-A(TE85L,F units undergo pre-shipment inspection (PSI). If there is an issue with HN1C03FU-A(TE85L,F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1C03FU-A(TE85L,F part is unused and in its original packaging.
Return procedure for HN1C03FU-A(TE85L,F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HN1C03FU-A(TE85L,F Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
-
FMB2222A
onsemi
-
ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
