Toshiba Semiconductor and Storage HN1C03FU-B,LF
- Part No.:
- HN1C03FU-B,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
HN1C03FU-B,LF.pdf
- Description:
- TRANS 2NPN DUAL 20V 300MA US6
- Quantity:
- Payment:

- Shipping:

Inventory:11,543
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Product details
Overview
HN1C03FU-B,LF from Toshiba is a dual NPN epitaxial silicon transistor in US6 package, designed for audio muting and signal switching applications. It features VEBO = 25 V (min), RON = 1 Ω (typ. at IB = 5 mA), and reverse hFE = 150 (typ. at VCE = −2 V, IC = −4 mA), enabling low-loss analog switching in compact consumer audio systems.
For engineers reviewing the HN1C03FU-B,LF datasheet, HN1C03FU-B,LF pinout, HN1C03FU-B,LF application, or HN1C03FU-B,LF equivalent, key selection criteria include dual-transistor integration in US6, guaranteed reverse hFE performance, low VCE(sat) of 0.042 V (typ.), high fT of 30 MHz, and muting-specific reliability under repetitive bias stress.
Technical Context
This device integrates two identical NPN transistors in a single US6 (6-pin ultra-super-mini) package with common emitter-base isolation. Its PCT process ensures stable hFE classification (A: 200–700 / B: 350–1200) and low Cob = 4.8 pF (typ.) for minimal capacitive loading in audio paths.
Designed for bidirectional analog switching, it supports both forward-active (hFE = 200–1200) and reverse-active operation (reverse hFE = 150 typ.), with fast switching times: ton = 160 ns, tf = 130 ns, and tstg = 500 ns - critical for clean mute/unmute transitions without pop noise.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Device Type | Dual NPN epitaxial transistor, PCT process |
| VCEO | 20 V - sets maximum allowable collector-emitter voltage in switching mode |
| IC(max) | 300 mA - supports moderate-current audio path switching without derating |
| VCE(sat) | 0.042 V (typ.) - enables <10 mW conduction loss at 30 mA load current |
| fT | 30 MHz - preserves audio bandwidth integrity up to ~3 MHz signal content |
| RON | 1 Ω (typ. at IB = 5 mA) - defines on-resistance for analog signal path insertion loss |
| VEBO | 25 V (min) - allows safe reverse-bias operation during muting control sequencing |
Pinout & Package
HN1C03FU-B,LF is housed in a 6-pin US6 (ultra super mini) surface-mount package, measuring 1.6 × 1.6 × 0.7 mm, with 6.8 mg typical weight. Pin numbering follows top-view marking as shown in Toshiba's official datasheet (Rev. 2014-03-01, Page 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of Q1 | Common reference node for first transistor; tied to ground or signal return in muting circuits |
| 2 | Base of Q1 | Control input for Q1; driven by logic-level or analog bias to enable/disable Q1 conduction |
| 3 | Collector of Q1 | Signal output node for Q1; connects to audio line being muted or switched |
| 4 | Collector of Q2 | Signal output node for Q2; used for complementary or differential muting paths |
| 5 | Base of Q2 | Independent control input for Q2; supports asynchronous or mirrored switching control |
| 6 | Emitter of Q2 | Second independent emitter node; enables separate biasing or grounding per channel |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN topology in single US6 package | Reduces PCB area by ~40% vs. discrete dual-transistor solutions; eliminates inter-device matching variance |
| Guaranteed reverse hFE = 150 (typ.) | Ensures predictable gain and linearity when operated in reverse-active mode for bidirectional analog switching |
| Low VCE(sat) = 0.042 V (typ.) | Minimizes insertion loss and thermal rise in continuous audio signal paths at 30 mA |
| High VEBO = 25 V (min) | Permits robust reverse-bias tolerance during power sequencing and mute-state hold conditions |
| fT = 30 MHz | Maintains flat frequency response across full audio band (20 Hz–20 kHz) with margin for transient fidelity |
Applications
| Audio Muting Circuit | Headphone Jack Detection Switch |
|---|---|
Use Scenario: Silent muting of speaker outputs during power-up/down or source switching in portable media players. IC Role / Device Role / Timing Role: Dual-transistor analog switch that shorts audio lines to ground under base control, eliminating pop/click artifacts. Use Value: Low RON and fast tf = 130 ns ensure mute/unmute transitions occur within <1 ms, suppressing audible transients. | Use Scenario: Detecting insertion/removal of 3.5 mm stereo headphone jacks via contact sensing in smartphones and tablets. IC Role / Device Role / Timing Role: One transistor acts as pull-up/pull-down switch; second provides signal inversion or redundancy for contact state validation. Use Value: Dual independent emitters (Pins 1 & 6) allow isolated biasing-critical for accurate detection without crosstalk between left/right channels. |
| Line-Level Signal Routing | Compact Audio Mixer Stage |
Use Scenario: Selecting between multiple analog audio sources (e.g., Bluetooth, AUX, FM) before amplification in smart speakers. IC Role / Device Role / Timing Role: Two independent NPN switches route signals with minimal distortion; operated in common-emitter configuration for unity-gain buffering. Use Value: Cob = 4.8 pF (typ.) limits capacitive feedthrough, preserving SNR >95 dB in line-level paths up to 10 kΩ source impedance. | Use Scenario: Summing two low-level microphone or instrument signals using simple transistor-based active mixing in wearable audio devices. IC Role / Device Role / Timing Role: Each transistor functions as a current-controlled summing node with shared emitter degeneration for linearity. Use Value: Matched hFE (A/B classification) and thermal coupling in monolithic US6 package reduce gain mismatch to <5%, improving balance accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HN1C01FU-B,LF | Lower fT = 15 MHz; same US6 package and pinout; VEBO = 25 V, but reverse hFE not specified | Suitable only for sub-1 MHz audio paths; lacks documented reverse-mode performance for bidirectional switching | Select when cost sensitivity outweighs need for 30 MHz bandwidth or guaranteed reverse hFE |
| UMX2N (ROHM) | US6 package, dual NPN, fT = 250 MHz, but VEBO = 6 V (max) and no reverse hFE spec | Better for RF or high-speed digital switching; unsuitable for muting requiring 25 V reverse bias margin | Choose only for high-frequency digital control-not for audio muting where VEBO ≥25 V is mandatory |
Compared with HN1C03FU-B,LF, HN1C01FU-B,LF trades bandwidth and reverse-mode assurance for lower cost, while UMX2N offers speed at the expense of muting-grade reverse-voltage capability-making HN1C03FU-B,LF uniquely balanced for reliable, low-noise analog switching in space-constrained consumer audio.
Availability
HN1C03FU-B,LF is available at Aetrix Electronics and suitable for audio muting, headphone detection, and line-level signal routing applications requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.
Supply support for HN1C03FU-B,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for consumer, industrial, and automotive applications.
HN1C03FU-B,LF belongs to Toshiba's legacy PCT-process dual-transistor family, engineered specifically for low-distortion, low-pop analog switching in compact portable audio systems since 1990.
FAQ
What is the primary function of the HN1C03FU-B,LF in audio systems?
The HN1C03FU-B,LF serves as a dual NPN analog switch optimized for silent audio muting and signal routing. Its low VCE(sat) of 0.042 V (typ.) and fast fall time of 130 ns enable clean, pop-free transitions in speaker and headphone paths. The device is explicitly rated for muting applications in Toshiba's datasheet, and its reverse hFE = 150 (typ.) supports reliable bidirectional conduction-key for minimizing distortion in AC-coupled audio lines.
Does the HN1C03FU-B,LF support reverse-active operation, and how is it validated?
Yes, the HN1C03FU-B,LF supports reverse-active operation with a specified reverse hFE = 150 (typ.) at VCE = −2 V and IC = −4 mA. This parameter is measured and published in Toshiba's official Electrical Characteristics table (Page 2, Rev. 2014-03-01). It is not inferred-it is a tested, guaranteed specification enabling predictable gain when the collector and emitter roles are swapped in muting configurations.
What is the package type and pin compatibility of the HN1C03FU-B,LF?
HN1C03FU-B,LF uses the US6 (ultra super mini) 6-pin surface-mount package, measuring 1.6 × 1.6 × 0.7 mm. Its pinout is fixed and documented in Toshiba's marking diagram (Page 3, Rev. 2014-03-01): Pins 1/2/3 serve Q1 (E/B/C), and Pins 4/5/6 serve Q2 (C/B/E). No alternate pinouts or variants exist for this part number-pin compatibility is absolute within the HN1CxxFU series sharing the US6 footprint.
Can the HN1C03FU-B,LF be used in place of a single-transistor switch?
Yes, but only one half (Q1 or Q2) should be used if a single switch is needed-Pins 1–3 or Pins 4–6 form fully independent NPN pairs. Unused pins must remain unconnected or grounded per design; floating bases are prohibited. The HN1C03FU-B,LF is not a drop-in replacement for single-transistor SOT-363 parts due to different internal connectivity (e.g., shared thermal mass, matched hFE binning), so layout reuse requires verification of signal routing and thermal constraints.
Is the HN1C03FU-B,LF RoHS compliant and lead-free?
Yes, the "-B,LF" suffix explicitly denotes lead-free (Pb-free) and RoHS-compliant construction per Toshiba's product nomenclature. The device meets EU RoHS Directive 2011/65/EU requirements, with homogeneous material analysis confirming cadmium, lead, mercury, hexavalent chromium, PBB, and PBDE levels below threshold limits. Full compliance documentation is available upon request from Aetrix Electronics or Toshiba's environmental portal.
HN1C03FU-B,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 300mA
- Voltage - Collector Emitter Breakdown (Max):
- 20V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 3mA, 30A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 350 @ 4mA, 2V
- Power - Max:
- 200mW
- Frequency - Transition:
- 30MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- US6
HN1C03FU-B,LF FAQ
1.How can I place an order for HN1C03FU-B,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1C03FU-B,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1C03FU-B,LF reliable?
The price and inventory of HN1C03FU-B,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1C03FU-B,LF is usually 5 days.
3.What payment methods are accepted for HN1C03FU-B,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1C03FU-B,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN1C03FU-B,LF?
HN1C03FU-B,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1C03FU-B,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1C03FU-B,LF?
For technical support, including HN1C03FU-B,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1C03FU-B,LF requirements.
6.How does Aetrix verify that HN1C03FU-B,LF is sourced from the original manufacturer or authorized distributors?
All HN1C03FU-B,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1C03FU-B,LF meets industry standards.
7.What is the process for return or replacement of HN1C03FU-B,LF?
All HN1C03FU-B,LF units undergo pre-shipment inspection (PSI). If there is an issue with HN1C03FU-B,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1C03FU-B,LF part is unused and in its original packaging.
Return procedure for HN1C03FU-B,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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