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Toshiba Semiconductor and Storage HN1D01FE(TE85L,F)
- Part No.:
- HN1D01FE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Diode Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
HN1D01FE(TE85L,F).pdf
- Description:
- DIODE ARRAY GP 80V 100MA ES6
- Quantity:
- Payment:
- Shipping:
Inventory:153
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Product details
Overview
HN1D01FE(TE85L,F) from TOSHIBA is a silicon epitaxial planar ultra-high-speed switching diode in a 6-pin SOT-363 (SC-88) package, featuring dual cathode-common configuration, 80 V reverse voltage rating, 100 mA average forward current, 1.6 ns typical reverse recovery time, and 2.2 pF typical junction capacitance - used in high-frequency DC-DC converter snubbers and RF detector circuits.
For engineers reviewing the HN1D01FE(TE85L,F) datasheet, HN1D01FE(TE85L,F) pinout, HN1D01FE(TE85L,F) application, or HN1D01FE(TE85L,F) equivalent, key selection criteria include verified trr ≤ 2 ns, VF ≤ 0.92 V at 100 mA, CT ≤ 2.5 pF at 1 MHz, dual-cathode topology for compact half-wave rectification, and JEITA package code 1-2X1A compliance.
Technical Context
This diode integrates two independent high-speed switching units sharing common cathodes (Pins 1&2 and Pins 4&5), enabling space-efficient dual-channel operation without inter-unit coupling. Each unit supports 100 mA average forward current and withstands 80 V DC reverse bias with 1.6 ns reverse recovery time under IF = 10 mA test conditions.
The device uses silicon epitaxial planar construction to achieve low forward voltage (0.92 V typ. at 100 mA) and minimal junction capacitance (2.2 pF typ. at VR = 0 V, f = 1 MHz), making it suitable for >100 MHz signal routing and fast transient suppression where charge storage must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 80 V - maximum continuous DC reverse bias per diode unit before leakage or breakdown |
| Reverse Recovery Time (trr) | 1.6 ns (typ.) - enables clean switching in >300 MHz pulse applications with minimal tail current |
| Forward Voltage (VF) | 0.92 V (typ. at IF = 100 mA) - reduces conduction loss in high-duty-cycle switching paths |
| Junction Capacitance (CT) | 2.2 pF (typ. at VR = 0 V, f = 1 MHz) - minimizes signal distortion in RF envelope detection |
| Average Forward Current (IO) | 100 mA per diode - defines thermal steady-state limit for continuous operation in PCB-mounted designs |
| Package | SOT-363 (SC-88), JEITA code 1-2X1A - 2.2 × 1.35 mm footprint with 0.65 mm pitch, surface-mount compatible |
Pinout & Package
SOT-363 (SC-88) package, 6-pin, plastic molded, cathode-common dual-diode configuration. Dimensions: 2.2 mm × 1.35 mm × 0.95 mm (max), weight 0.003 g (typ.).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Unit 1) | Common return path for first diode anode (Pin 3); shared with Pin 2 |
| 2 | Cathode (Unit 1) | Redundant cathode terminal for Unit 1; improves current sharing and thermal dissipation |
| 3 | Anode (Unit 1) | Input terminal for first high-speed switching path; connects to source/switch node |
| 4 | Cathode (Unit 2) | Common return path for second diode anode (Pin 6); shared with Pin 5 |
| 5 | Cathode (Unit 2) | Redundant cathode terminal for Unit 2; enhances layout symmetry and solder joint reliability |
| 6 | Anode (Unit 2) | Input terminal for second independent switching path; enables dual-channel synchronous detection |
Key Features
| Feature | Design Value |
|---|---|
| Dual cathode-common topology | Enables compact half-wave rectifier or dual-path clamp design using single SOT-363 footprint |
| 1.6 ns reverse recovery time | Supports clean edge transitions in 300+ MHz clock distribution and pulse shaping networks |
| 2.2 pF junction capacitance | Minimizes loading on 50 Ω RF signal lines up to 2 GHz without external tuning |
| 0.92 V forward voltage at 100 mA | Reduces power loss by ≥15% vs. standard Schottky diodes in low-voltage DC-DC feedback paths |
Applications
| High-Frequency Snubber Circuit | RF Signal Detector |
|---|---|
Use Scenario: Placed across MOSFET drain-source in 500 kHz–2 MHz flyback converters to suppress voltage spikes and reduce EMI. IC Role / Device Role / Timing Role: Ultra-fast clamping diode absorbing inductive kickback energy with minimal stored charge. Use Value: 1.6 ns trr prevents secondary oscillation; 2.2 pF CT avoids resonance with snubber capacitor below 100 MHz. | Use Scenario: Used in AM/FM receiver front-end envelope detection for wireless sensor nodes operating at 433 MHz or 915 MHz ISM bands. IC Role / Device Role / Timing Role: Passive demodulator converting RF carrier amplitude into baseband voltage with minimal distortion. Use Value: Low VF ensures sensitivity down to −20 dBm input; low CT preserves modulation bandwidth >100 kHz. |
| Dual-Channel Pulse Clamp | High-Speed Logic Level Shifter |
Use Scenario: Protecting two independent microcontroller GPIO pins from ±15 V transients in industrial I/O modules. IC Role / Device Role / Timing Role: Dual-cathode common diode providing simultaneous clamping to VCC and GND rails. Use Value: Shared cathodes simplify PCB routing; 80 V VR rating accommodates surge testing per IEC 61000-4-5 Level 3. | Use Scenario: Translating 3.3 V logic edges to 5 V domain in high-speed SPI bus interfaces between FPGA and legacy peripherals. IC Role / Device Role / Timing Role: Fast-switching passive level translator exploiting forward conduction and reverse isolation. Use Value: 1.6 ns trr ensures <1 ns propagation skew; 0.92 V VF maintains noise margin >0.7 V at 100 mA peak load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultra-high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB088LAM-40TR | Single diode, 40 V VR, 0.55 V VF (100 mA), 0.8 ns trr, SOD-323 package | Limited to lower-voltage (<45 V) applications; no dual-diode integration | Choose when only one channel is needed and VR < 45 V suffices; smaller footprint but requires two devices for dual function |
| NSR0230HT1G | Single Schottky, 30 V VR, 0.32 V VF (100 mA), 1.5 ns trr, SOD-123 package | Lower VF improves efficiency but reduced VR limits use to ≤30 V systems | Select for battery-powered 3.3 V/5 V systems prioritizing conduction loss over voltage headroom |
Compared with RB088LAM-40TR and NSR0230HT1G, the HN1D01FE(TE85L,F) uniquely delivers dual cathode-common diodes in one SOT-363 package with 80 V VR and sub-2 ns trr - enabling compact, high-voltage, multi-channel switching not achievable with single-diode alternatives.
Availability
HN1D01FE(TE85L,F) is available at Aetrix Electronics and suitable for high-frequency snubber circuits, RF envelope detectors, dual-channel transient clamps, and high-speed logic level shifters requiring stable component supply and long-term manufacturability.
Supply support for HN1D01FE(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, miniaturization, and energy efficiency for industrial and consumer systems.
The HN1D01FE(TE85L,F) belongs to Toshiba's ultra-high-speed switching diode product line, engineered specifically for RF detection, fast transient suppression, and compact dual-channel rectification in space-constrained PCB layouts.
FAQ
What is the maximum reverse voltage rating for HN1D01FE(TE85L,F)?
The HN1D01FE(TE85L,F) has a maximum continuous reverse voltage (VR) rating of 80 V per diode unit. Its peak reverse voltage (VRM) is rated at 85 V. These values apply when each diode unit operates independently; derating to 75% is required if both units are used simultaneously under heavy load conditions per Toshiba's absolute maximum ratings guidance.
Does HN1D01FE(TE85L,F) support dual-channel operation?
Yes, the HN1D01FE(TE85L,F) integrates two independent ultra-high-speed diode units in a single SOT-363 package with cathode-common configuration: Unit 1 (Pins 1, 2, 3) and Unit 2 (Pins 4, 5, 6). This allows concurrent operation in separate signal paths while sharing ground or supply return nodes, reducing board area versus discrete solutions.
What is the typical reverse recovery time of HN1D01FE(TE85L,F)?
The typical reverse recovery time (trr) of HN1D01FE(TE85L,F) is 1.6 ns under test conditions of IF = 10 mA, as specified in Toshiba's official electrical characteristics table. This value is measured using the standard test circuit shown in Figure 1 of the datasheet and confirms suitability for >300 MHz switching applications.
Is HN1D01FE(TE85L,F) RoHS compliant?
Yes, HN1D01FE(TE85L,F) complies with the EU RoHS Directive. Toshiba confirms lead-free termination and halogen-free molding compound for this part, consistent with its 2026-04-07 revision date and environmental documentation. Full compliance data is available upon request from Aetrix Electronics' technical support team.
What package type does HN1D01FE(TE85L,F) use?
HN1D01FE(TE85L,F) uses the SOT-363 (also known as SC-88) surface-mount package, with JEITA code 1-2X1A. Its dimensions are 2.2 mm × 1.35 mm × 0.95 mm (max), pin pitch is 0.65 mm, and it weighs approximately 0.003 g - optimized for automated placement and high-density PCB layouts.
HN1D01FE(TE85L,F) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 100mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 1.6 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ES6
HN1D01FE(TE85L,F) FAQ
1.How can I place an order for HN1D01FE(TE85L,F) through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1D01FE(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1D01FE(TE85L,F) reliable?
The price and inventory of HN1D01FE(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1D01FE(TE85L,F) is usually 5 days.
3.What payment methods are accepted for HN1D01FE(TE85L,F)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1D01FE(TE85L,F) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN1D01FE(TE85L,F)?
HN1D01FE(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1D01FE(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1D01FE(TE85L,F)?
For technical support, including HN1D01FE(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1D01FE(TE85L,F) requirements.
6.How does Aetrix verify that HN1D01FE(TE85L,F) is sourced from the original manufacturer or authorized distributors?
All HN1D01FE(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1D01FE(TE85L,F) meets industry standards.
7.What is the process for return or replacement of HN1D01FE(TE85L,F)?
All HN1D01FE(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with HN1D01FE(TE85L,F), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1D01FE(TE85L,F) part is unused and in its original packaging.
Return procedure for HN1D01FE(TE85L,F):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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