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Toshiba Semiconductor and Storage HN1D02F(TE85L,F)
- Part No.:
- HN1D02F(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Diode Arrays
- Package:
- SC-74, SOT-457
- Datasheet:
-
HN1D02F(TE85L,F).pdf
- Description:
- DIODE ARRAY GP 80V 100MA SM6
- Quantity:
- Payment:
- Shipping:
Inventory:8,532
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Product details
Overview
HN1D02F(TE85L,F) from Toshiba Electronic Devices & Storage Corporation is a dual-cathode-common ultra-high-speed switching diode in SC-74 (1-3K1B) package. It delivers VF(3) = 0.90 V (typ.) at IF = 100 mA, trr = 1.6 ns (typ.), CT = 0.9 pF (typ.), VRM = 85 V, and IFM = 300 mA per diode - optimized for high-frequency signal routing in RF front-ends and digital logic clamping.
For engineers reviewing the HN1D02F(TE85L,F) datasheet, HN1D02F(TE85L,F) pinout, HN1D02F(TE85L,F) application, or HN1D02F(TE85L,F) equivalent, key selection criteria include dual-cathode topology, sub-2 ns reverse recovery, low junction capacitance, cathode-common configuration, and derated current handling when both units operate simultaneously.
Technical Context
This dual-diode device integrates two independent silicon epitaxial planar diodes sharing a common cathode terminal, enabling compact bidirectional clamping or dual-path signal conditioning. Its low VF and minimal CT support efficient high-speed switching up to UHF bands, while trr < 4.0 ns (max) ensures minimal switching loss in pulse-shaping circuits.
The SC-74 package supports surface-mount assembly with thermal resistance optimized for PD = 300 mW total dissipation. Absolute maximum ratings are defined per diode unit; simultaneous operation of both units requires 25% derating of IFM, IO, and IFSM per diode as specified in Note 3 and footnote (*).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 80 V - sets maximum DC blocking capability per diode in clamping or protection paths |
| Forward Voltage VF(3) | 0.90 V (typ.) at IF = 100 mA - minimizes conduction loss in high-duty-cycle switching |
| Reverse Recovery Time trr | 1.6 ns (typ.) - enables clean edge transitions in >500 MHz digital or RF signal paths |
| Total Capacitance CT | 0.9 pF (typ.) at VR = 0 V, f = 1 MHz - reduces signal loading and phase distortion in broadband applications |
| Junction Temperature Tj | 150°C (Note 1) - defines upper thermal limit for continuous operation with LF(T)-suffixed variants |
| Package | SC-74 (Toshiba 1-3K1B) - 3-pin SMT footprint compatible with JEDEC-standard reflow profiles |
Pinout & Package
HN1D02F(TE85L,F) uses the SC-74 (1-3K1B) surface-mount package with three terminals: Pin 1 (Anode 1), Pin 2 (Cathode Common), Pin 3 (Anode 2). The cathode-common configuration allows shared return path for dual-channel clamping or steering functions without external node connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode Unit 1 | Input node for first high-speed switching path; connects to signal source or driver output |
| Pin 2 | Common Cathode | Shared return path for both diodes; must be tied to reference potential (e.g., ground or bias rail) |
| Pin 3 | Anode of Diode Unit 2 | Input node for second independent switching path; enables dual-signal routing or redundancy |
Key Features
| Feature | Design Value |
|---|---|
| Dual cathode-common diodes | Enables space-efficient dual-channel clamping or steering without discrete cathode interconnect |
| Ultra-fast trr ≤ 4.0 ns (max) | Supports clean signal integrity in >300 Mbps digital interfaces and RF envelope detection |
| Low VF = 0.90 V (typ.) @ 100 mA | Reduces power loss and self-heating during repetitive forward conduction in pulse circuits |
| CT = 0.9 pF (typ.) | Minimizes capacitive loading on high-Z nodes such as mixer inputs or oscillator tank circuits |
| JEDEC SC-74 footprint | Ensures compatibility with standard SMT pick-and-place and reflow processes across production lines |
Applications
| RF Signal Clamping | Digital Logic Level Shifting |
|---|---|
Use Scenario: Protecting LNA input stages from ESD-induced overvoltage during antenna coupling in 2.4 GHz ISM-band transceivers. IC Role / Device Role / Timing Role: Fast clamping diode limiting instantaneous voltage swing to ±0.9 V above/below reference rail. Use Value: Sub-2 ns trr prevents transient energy from propagating into sensitive analog front-end circuitry. | Use Scenario: Translating 3.3 V LVCMOS logic outputs to 1.8 V I/O domains in FPGA-to-ASIC communication links. IC Role / Device Role / Timing Role: Bidirectional level translator using forward conduction and reverse isolation characteristics. Use Value: Low CT avoids signal rise/fall time degradation; dual-anode structure supports full-duplex translation. |
| Pulse Width Modulation Steering | High-Speed Data Line Protection |
Use Scenario: Routing PWM signals between microcontroller GPIOs and motor gate drivers in compact BLDC controllers. IC Role / Device Role / Timing Role: Anode-switched steering element directing pulses to alternate outputs based on cathode bias. Use Value: Dual-unit layout eliminates need for two separate diodes, reducing PCB area by 40% vs discrete solution. | Use Scenario: Guarding USB 2.0 D+ and D− lines against ESD events in portable medical data loggers. IC Role / Device Role / Timing Role: Low-capacitance shunt diode clamping transient surges to VBUS or GND rails. Use Value: 0.9 pF CT preserves 480 Mbps eye diagram integrity; cathode-common design simplifies PCB routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultra-high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB088LAM-40TR | Single diode, VRM = 40 V, trr = 2.5 ns (typ.), VF = 0.51 V (typ. @ 1 A) | Limited to lower-voltage (<40 V) clamping; higher IFM enables higher surge tolerance | Choose when single-diode function suffices and lower VRM is acceptable |
| NSR0230HT1G | Dual anode-common, VRM = 30 V, trr = 4.0 ns (max), CT = 1.5 pF (typ.) | Lower voltage rating and higher capacitance reduce suitability for >100 MHz RF use | Prefer for cost-sensitive 3.3 V logic protection where speed margin is relaxed |
Compared with RB088LAM-40TR and NSR0230HT1G, the HN1D02F(TE85L,F) uniquely combines 85 V VRM, dual-cathode topology, and sub-2 ns trr - making it the only option among the three qualified for 80 V-rated RF front-end clamping with minimal signal distortion.
Availability
HN1D02F(TE85L,F) is available at Aetrix Electronics and suitable for RF front-end protection, high-speed logic interface design, and compact motor control PCBs requiring stable component supply and long-term industrial availability.
Supply support for HN1D02F(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for industrial, automotive, and consumer applications.
The HN1D02F(TE85L,F) belongs to Toshiba's high-speed switching diode product line, engineered specifically for RF signal integrity preservation and fast transient suppression in space-constrained wireless and digital systems.
FAQ
What is the pin configuration of HN1D02F(TE85L,F)?
HN1D02F(TE85L,F) has a 3-pin SC-74 package with Pin 1 as Anode 1, Pin 2 as Common Cathode, and Pin 3 as Anode 2. This cathode-common dual-diode layout enables compact bidirectional clamping without external node wiring. The marking side view and top-view pin assignment are documented in Toshiba's official HN1D02F datasheet Figure 1.
Does HN1D02F(TE85L,F) support simultaneous conduction of both diode units?
Yes, HN1D02F(TE85L,F) supports simultaneous operation of both diode units, but absolute maximum ratings must be derated to 75% per diode - e.g., IFM becomes 225 mA per unit instead of 300 mA. This derating applies to IFM, IO, and IFSM as explicitly stated in the datasheet footnote (*) and Note 3 under Absolute Maximum Ratings.
What is the typical junction-to-ambient thermal resistance for HN1D02F(TE85L,F)?
HN1D02F(TE85L,F) does not specify RθJA in its published datasheet. Thermal performance depends on PCB copper area, solder pad size, and airflow. With standard JEDEC 2S2P test board conditions, SC-74 packages typically achieve RθJA ≈ 300–400°C/W. For precise thermal modeling, users should refer to Toshiba's application notes on SC-74 thermal design or perform board-specific characterization.
Is HN1D02F(TE85L,F) RoHS compliant?
Yes, HN1D02F(TE85L,F) is RoHS compliant. Toshiba confirms compliance with EU Directive 2011/65/EU (RoHS 2) for this part number, as verified through material declarations and manufacturing process controls. Full compliance documentation, including substance declarations and test reports, is available upon request from Toshiba's environmental support portal or authorized distributors.
Can HN1D02F(TE85L,F) replace BAT54S in existing designs?
HN1D02F(TE85L,F) is not a direct replacement for BAT54S due to structural and electrical differences: BAT54S uses anode-common dual configuration, while HN1D02F(TE85L,F) uses cathode-common. Additionally, HN1D02F(TE85L,F) offers higher VRM (85 V vs. 30 V) and faster trr (1.6 ns vs. ~4 ns), but requires PCB layout revision to accommodate reversed polarity and different pin mapping. Functional substitution is possible only after schematic and layout review.
HN1D02F(TE85L,F) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 100mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- -55°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SM6
HN1D02F(TE85L,F) FAQ
1.How can I place an order for HN1D02F(TE85L,F) through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1D02F(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1D02F(TE85L,F) reliable?
The price and inventory of HN1D02F(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1D02F(TE85L,F) is usually 5 days.
3.What payment methods are accepted for HN1D02F(TE85L,F)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1D02F(TE85L,F) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN1D02F(TE85L,F)?
HN1D02F(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1D02F(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1D02F(TE85L,F)?
For technical support, including HN1D02F(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1D02F(TE85L,F) requirements.
6.How does Aetrix verify that HN1D02F(TE85L,F) is sourced from the original manufacturer or authorized distributors?
All HN1D02F(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1D02F(TE85L,F) meets industry standards.
7.What is the process for return or replacement of HN1D02F(TE85L,F)?
All HN1D02F(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with HN1D02F(TE85L,F), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1D02F(TE85L,F) part is unused and in its original packaging.
Return procedure for HN1D02F(TE85L,F):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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