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Toshiba Semiconductor and Storage HN1D02FU(T5L,F,T)
- Part No.:
- HN1D02FU(T5L,F,T)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Diode Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
HN1D02FU(T5L,F,T).pdf
- Description:
- DIODE ARRAY GP 80V 100MA ES6
- Quantity:
- Payment:
- Shipping:
Inventory:8
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Product details
Overview
HN1D02FU(T5L,F,T) from Toshiba Electronic Devices & Storage Corporation is a dual-cathode-common ultra-high-speed switching diode pair fabricated using silicon epitaxial planar technology. It delivers VF(3) = 0.90 V (typ.), trr = 1.6 ns (typ.), CT = 0.9 pF (typ.), VRM = 85 V, and IFM = 300 mA per diode - optimized for high-frequency signal routing in automotive infotainment power management.
For engineers reviewing the HN1D02FU(T5L,F,T) datasheet, HN1D02FU(T5L,F,T) pinout, HN1D02FU(T5L,F,T) application, or HN1D02FU(T5L,F,T) equivalent, key selection criteria include AEC-Q101 qualification, dual-diode cathode-common configuration, low capacitance, fast recovery, and FR4-mounting thermal derating behavior.
Technical Context
This dual-diode device integrates two independent high-speed switching elements sharing a common cathode terminal, enabling compact bidirectional clamping or level-shifting in space-constrained PCB layouts. Its epitaxial planar structure ensures consistent trr < 4.0 ns and low CT across temperature, supporting stable operation up to 150°C junction temperature under derated conditions.
The device operates with forward current ratings defined per diode unit (IFM = 300 mA single-unit, reduced to 225 mA when both units are used simultaneously), and its absolute maximum ratings are explicitly conditioned on mounting geometry (FR4 board: 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.32 mm² × 6).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRM | 85 V peak reverse voltage - defines maximum transient overvoltage tolerance in clamp or flyback paths |
| trr | 1.6 ns typical reverse recovery time - enables >300 MHz switching in RF detector or sampling circuits |
| CT | 0.9 pF typical total capacitance at 0 V/1 MHz - minimizes signal loading in high-speed data line protection |
| VF(3) | 0.90 V typical forward voltage at 100 mA - reduces conduction loss in low-voltage logic-level translation |
| IFM | 300 mA peak forward current per diode - supports pulsed current handling in burst-mode DC-DC feedback networks |
| AEC-Q101 | Qualified per automotive stress test standard - validates reliability for under-hood infotainment power rails |
Pinout & Package
HN1D02FU(T5L,F,T) uses the US6 surface-mount package (JEDEC TO-236AB, TOSHIBA 1-2T1S), measuring 2.9 × 1.3 × 0.9 mm, with 3 terminals: Anode 1, Anode 2, and Common Cathode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1 (Pin 1) | Input node for first diode unit | Accepts forward-biased signal or current path for independent switching control |
| Anode 2 (Pin 2) | Input node for second diode unit | Enables dual-path clamping or differential signal steering without shared anode routing |
| Cathode (Pin 3) | Common return node for both diodes | Reduces PCB trace count and thermal coupling between diode units in shared ground-return systems |
Key Features
| Feature | Design Value |
|---|---|
| Dual cathode-common topology | Eliminates need for separate cathode vias or split ground planes in dual-rail ESD protection designs |
| AEC-Q101 qualification | Validated for automotive-grade temperature cycling, humidity bias, and mechanical shock per JESD22-A108 |
| Low 0.9 pF capacitance | Maintains signal integrity in USB 2.0 and LVDS lines without added impedance discontinuity |
| 1.6 ns typical trr | Supports clean edge transitions in 50–100 MHz clock distribution networks with minimal tail distortion |
| Derated dual-diode operation | Permits simultaneous use of both units at 75% single-diode rating - simplifies thermal budgeting in multi-function nodes |
Applications
| Automotive Infotainment Power Clamp | High-Speed Logic-Level Translation |
|---|---|
Use Scenario: Suppressing load-dump transients on 5 V supply rails feeding HDMI transmitter ICs in head-unit modules. IC Role / Device Role: Dual-diode cathode-common configuration provides symmetrical clamping to ground for both hot-swap and reverse-polarity events. Use Value: 85 V VRM and AEC-Q101 qualification ensure compliance with ISO 7637-2 Pulse 5a/b requirements without external TVS stacking. | Use Scenario: Level-shifting 3.3 V UART signals to 5 V microcontroller peripherals in telematics gateways. IC Role / Device Role: Forward-biased diode pair acts as passive bidirectional translator with matched VF characteristics. Use Value: 0.90 V VF(3) and 0.9 pF CT preserve rise/fall times below 2 ns while minimizing static current draw. |
| RF Signal Sampling Detector | Digital Isolator Bias Network |
Use Scenario: Peak detection in 2.4 GHz ISM-band receiver front-end AGC loops using envelope extraction. IC Role / Device Role: High-frequency switching diode operating near zero-bias condition for minimal junction capacitance modulation. Use Value: 1.6 ns trr and sub-1 pF CT enable accurate sampling of RF envelope with < 0.5 dB amplitude error up to 1 GHz. | Use Scenario: Providing isolated bias current to optocoupler LED anodes in industrial PLC I/O modules. IC Role / Device Role: Dual-anode configuration supplies matched forward current to two optocouplers sharing one cathode return. Use Value: Identical VF matching (< ±5 mV) between units ensures balanced LED drive and consistent CTR across channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultra-high-speed dual-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB088MM-40TFHT | Single-diode SOD-923 package, 40 V VRM, 0.55 V VF(10mA), 0.25 pF CT - lower voltage rating, lower capacitance, no dual configuration | Not suitable for dual-path or cathode-common topologies; limited to single-rail clamping | Select only when system requires < 40 V operation and board space permits two discrete devices |
| NSR20F40NXT5G | Dual-cathode Schottky, 40 V VRM, 0.45 V VF(10mA), 20 pF CT - higher capacitance, lower VF, no AEC-Q101 qualification | Lacks automotive qualification and high-frequency performance; unsuitable for >100 MHz signal paths | Prefer for cost-sensitive consumer power rails where trr and CT are non-critical |
Compared with RB088MM-40TFHT and NSR20F40NXT5G, HN1D02FU(T5L,F,T) uniquely combines AEC-Q101 qualification, 85 V VRM, dual-cathode-common layout, and sub-2 ns trr - making it the only option for automotive-grade, high-frequency dual-path clamping where layout density and transient immunity are co-constrained.
Availability
HN1D02FU(T5L,F,T) is available at Aetrix Electronics and suitable for automotive infotainment power clamp, high-speed logic-level translation, and RF signal sampling detector applications requiring stable component supply and long-term lifecycle support.
Supply support for HN1D02FU(T5L,F,T) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer reliability standards.
HN1D02FU(T5L,F,T) belongs to Toshiba's ultra-high-speed switching diode product line, engineered specifically for AEC-Q101-compliant signal integrity and power rail protection in compact automotive electronics.
FAQ
What is the pin configuration of HN1D02FU(T5L,F,T)?
HN1D02FU(T5L,F,T) uses a 3-pin US6 package with Pin 1 = Anode 1, Pin 2 = Anode 2, and Pin 3 = Common Cathode. This cathode-common dual-diode layout is confirmed in Toshiba's official datasheet Figure 1 and supports shared ground-return applications without inter-diode isolation.
Is HN1D02FU(T5L,F,T) qualified for automotive use?
Yes, HN1D02FU(T5L,F,T) is AEC-Q101 qualified per Note 1 in Toshiba's datasheet. This qualification covers temperature cycling, humidity bias, and mechanical shock testing required for automotive power and signal conditioning applications - including under-hood infotainment modules.
What is the maximum forward current rating for HN1D02FU(T5L,F,T) when both diodes are used simultaneously?
When both diode units in HN1D02FU(T5L,F,T) are used simultaneously, the maximum peak forward current per diode is derated to 75% of the single-diode rating - i.e., 225 mA (75% of 300 mA). This derating is explicitly stated in Toshiba's Absolute Maximum Ratings table and applies to all continuous or pulsed dual-unit operation.
How does the 0.9 pF capacitance of HN1D02FU(T5L,F,T) impact high-speed signal integrity?
The 0.9 pF typical total capacitance of HN1D02FU(T5L,F,T) minimizes signal reflection and edge degradation in high-speed interfaces. At 100 MHz, this capacitance introduces < 0.2 Ω capacitive reactance, preserving rise times below 2 ns in USB 2.0 and LVDS paths without requiring additional series termination.
Can HN1D02FU(T5L,F,T) replace single-diode packages in existing designs?
HN1D02FU(T5L,F,T) is not a drop-in replacement for single-diode packages due to its 3-pin cathode-common configuration and dual functionality. Replacing a single diode requires redesigning the PCB layout to accommodate the shared cathode and verify thermal derating for dual-unit operation - no pin-compatible alternatives exist in the same footprint.
HN1D02FU(T5L,F,T) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 100mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 125°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ES6
HN1D02FU(T5L,F,T) FAQ
1.How can I place an order for HN1D02FU(T5L,F,T) through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1D02FU(T5L,F,T) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1D02FU(T5L,F,T) reliable?
The price and inventory of HN1D02FU(T5L,F,T) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1D02FU(T5L,F,T) is usually 5 days.
3.What payment methods are accepted for HN1D02FU(T5L,F,T)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1D02FU(T5L,F,T) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN1D02FU(T5L,F,T)?
HN1D02FU(T5L,F,T) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1D02FU(T5L,F,T) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1D02FU(T5L,F,T)?
For technical support, including HN1D02FU(T5L,F,T) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1D02FU(T5L,F,T) requirements.
6.How does Aetrix verify that HN1D02FU(T5L,F,T) is sourced from the original manufacturer or authorized distributors?
All HN1D02FU(T5L,F,T) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1D02FU(T5L,F,T) meets industry standards.
7.What is the process for return or replacement of HN1D02FU(T5L,F,T)?
All HN1D02FU(T5L,F,T) units undergo pre-shipment inspection (PSI). If there is an issue with HN1D02FU(T5L,F,T), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1D02FU(T5L,F,T) part is unused and in its original packaging.
Return procedure for HN1D02FU(T5L,F,T):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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