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Toshiba Semiconductor and Storage HN1D04FUTE85LF
- Part No.:
- HN1D04FUTE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
HN1D04FUTE85LF.pdf
- Description:
- DIODE ARRAY GP 80V 100MA US6
- Quantity:
- Payment:
- Shipping:
Inventory:9,613
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Product details
Overview
HN1D04FUTE85LF from Toshiba is a silicon epitaxial planar ultra-high-speed switching diode in a US6 package with 4 independent diode elements (Q1–Q4), VF(3) = 0.90 V (typ.) at IF = 100 mA, trr = 1.6 ns (typ.), CT = 0.9 pF (typ.), and VRM = 85 V - used in high-frequency DC-DC converter snubbers and RF detector circuits.
For engineers reviewing the HN1D04FUTE85LF datasheet, HN1D04FUTE85LF pinout, HN1D04FUTE85LF application, or HN1D04FUTE85LF equivalent, key selection criteria include reverse recovery time under 2 ns, low forward voltage at 100 mA, sub-1-pF junction capacitance, and quad-diode integration for compact synchronous rectifier or signal routing designs.
Technical Context
This quad ultra-fast switching diode integrates four identical silicon epitaxial planar diodes in a single US6 surface-mount package. Each diode shares common electrical characteristics: VF(3) = 0.90 V (typ.) at 100 mA, trr = 1.6 ns (typ.), CT = 0.9 pF (typ.), and VRM = 85 V.
The device operates with independent or simultaneous conduction across Q1–Q4, with absolute maximum ratings per diode reduced to 50% when pairs (Q1/Q2 or Q3/Q4) are used concurrently - confirming its design for interleaved or multi-phase high-frequency switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRM | 85 V - supports input rails up to 72 V DC in offline or industrial SMPS designs |
| trr | 1.6 ns (typ.) - enables operation above 100 MHz in RF envelope detection and fast transient clamping |
| VF(3) | 0.90 V (typ.) at IF = 100 mA - reduces conduction loss vs. standard Schottky diodes in low-voltage synchronous rectifiers |
| CT | 0.9 pF (typ.) at VR = 0 V, f = 1 MHz - minimizes signal distortion in broadband sampling and high-speed logic interface protection |
| IFM | 300 mA (peak) per diode - suitable for gate-drive clamp and flyback snubber current pulses |
| Tj max | 150 °C - allows operation in thermally constrained automotive infotainment and industrial PLC modules |
Pinout & Package
Package: US6 (JEITA package code 1-2T1F), 6-pin surface-mount, 2.9 × 1.3 × 0.9 mm body, 6.8 g typical weight.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Q1 | Input node for first diode element in quad configuration |
| 2 | Cathode of Q2 | Output node for second diode; shared cathode layout enables common-cathode dual-diode use |
| 3 | Anode of Q4 | Independent anode terminal for fourth diode; supports asymmetric routing in multi-path detectors |
| 4 | Cathode of Q3 | Second common-cathode node - allows parallel or series connection of Q3/Q4 with external traces |
| 5 | Anode of Q3 | Third anode terminal; paired with Pin 4 for dedicated Q3 path in precision rectifier arrays |
| 6 | Cathode of Q1 | First cathode terminal; isolated from other cathodes to support individual biasing of Q1 |
Key Features
| Feature | Design Value |
|---|---|
| Quad ultra-fast diode integration | Four independent 1.6 ns trr diodes in one US6 footprint - saves >70% board area vs. discrete SOT-363 solutions |
| Low forward voltage at 100 mA | 0.90 V typ. VF(3) - improves efficiency in 3.3 V/5 V buck converter secondary-side rectification |
| Sub-1 pF junction capacitance | 0.9 pF CT at 0 V - preserves signal integrity in 50 Ω RF detector and mixer applications up to 2 GHz |
| Thermal robustness | 150 °C max junction temperature - supports operation in sealed enclosures without forced airflow |
Applications
| High-Frequency Snubber Network | RF Signal Envelope Detection |
|---|---|
Use Scenario: Used across MOSFET drain-source in 500 kHz–2 MHz LLC resonant converters to suppress voltage spikes and reduce EMI. IC Role / Device Role / Timing Role: Ultra-fast switching diode providing low-loss, low-capacitance clamping path during MOSFET turn-off transitions. Use Value: 1.6 ns trr and 0.9 pF CT minimize energy loss and ringing, improving system efficiency by up to 0.8% at full load. | Use Scenario: Integrated into 900 MHz ISM-band receiver front-end as AM demodulator for wireless sensor nodes. IC Role / Device Role / Timing Role: Quad diode configured as peak detector with matched VF and CT across channels for consistent envelope tracking. Use Value: Matched 0.90 V VF(3) and 0.9 pF CT across Q1–Q4 enable <±0.05 dB amplitude error across 4-channel diversity receivers. |
| Synchronous Rectifier Array | Digital Logic Level Translation Clamp |
Use Scenario: Employed in dual-output 12 V/3.3 V DC-DC module where Q1/Q2 handle primary output and Q3/Q4 manage auxiliary rail rectification. IC Role / Device Role / Timing Role: Four independently controllable diodes replacing eight discrete devices in active rectification control loop. Use Value: 0.90 V VF(3) reduces conduction loss by 22% vs. 1.15 V Schottky alternatives at 100 mA, lowering thermal stress on PCB. | Use Scenario: Protecting 3.3 V FPGA I/O banks interfacing with 5 V microcontroller GPIOs using bidirectional level-shifting topology. IC Role / Device Role / Timing Role: Quad diode used as back-to-back clamping pair (Q1/Q2 + Q3/Q4) to limit voltage excursion beyond supply rails. Use Value: 0.9 pF CT ensures <10 ps timing skew between clamp paths, preserving setup/hold margins in 100 MHz digital interfaces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultra-fast switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB050M-40TFTE2 | Single diode, 40 V VRM, 0.52 V VF(1A), trr = 4.0 ns, SOD-123FL package | Limited to lower-voltage (<36 V) DC-DC outputs; no quad integration | Select when only one high-efficiency diode is needed and board space permits discrete placement |
| NSR0230HT1G | Single Schottky, 30 V VR, 0.32 V VF(100mA), CT = 25 pF, SOD-123 package | Lower VF but 27× higher CT - unsuitable for >10 MHz RF or fast switching | Prefer for low-VF, low-frequency (<1 MHz) rectification where capacitance is not critical |
Compared with RB050M-40TFTE2 and NSR0230HT1G, HN1D04FUTE85LF uniquely delivers quad 1.6 ns trr diodes in a 2.9 mm × 1.3 mm footprint with 85 V rating and sub-1 pF capacitance - enabling compact, high-frequency, multi-rail power and RF signal conditioning unachievable with single-diode alternatives.
Availability
HN1D04FUTE85LF is available at Aetrix Electronics and suitable for high-frequency snubber networks, RF envelope detectors, synchronous rectifier arrays, and digital I/O clamping requiring stable component supply and long-term manufacturability.
Supply support for HN1D04FUTE85LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for industrial, consumer, and automotive applications.
HN1D04FUTE85LF belongs to Toshiba's ultra-high-speed switching diode product line, engineered specifically for high-frequency power conversion and RF signal conditioning where sub-2 ns recovery and sub-1 pF capacitance are essential.
FAQ
What is the maximum reverse voltage rating for HN1D04FUTE85LF?
HN1D04FUTE85LF has a maximum peak reverse voltage (VRM) of 85 V and a continuous reverse voltage (VR) rating of 80 V at Ta = 25°C. These values are specified per diode element (Q1–Q4), and derating applies when multiple diodes operate simultaneously per Toshiba's absolute maximum rating note.
Does HN1D04FUTE85LF support simultaneous conduction across all four diodes?
Yes, HN1D04FUTE85LF supports simultaneous conduction across Q1–Q4, but Toshiba specifies that absolute maximum ratings per diode must be reduced to 50% when Q1/Q2 or Q3/Q4 are used concurrently - meaning IFM becomes 150 mA per diode under such conditions.
What is the typical forward voltage of HN1D04FUTE85LF at 100 mA?
The typical forward voltage VF(3) of HN1D04FUTE85LF is 0.90 V at IF = 100 mA and Ta = 25°C. This value is measured per diode and confirmed in Toshiba's official electrical characteristics table under test condition IF = 100 mA.
How is the pinout of HN1D04FUTE85LF configured for quad-diode operation?
HN1D04FUTE85LF uses a 6-pin US6 package with non-standard interleaved pin assignment: Pin 1 = Anode Q1, Pin 2 = Cathode Q2, Pin 3 = Anode Q4, Pin 4 = Cathode Q3, Pin 5 = Anode Q3, Pin 6 = Cathode Q1 - enabling flexible common-anode, common-cathode, or fully independent routing of each diode.
Is HN1D04FUTE85LF RoHS compliant and lead-free?
Yes, HN1D04FUTE85LF is RoHS compliant and lead-free, consistent with Toshiba's environmental policy and JEITA standards for the 1-2T1F package. Full compliance documentation, including substance declarations and test reports, is available through authorized Toshiba distributors.
HN1D04FUTE85LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 100mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 1.6 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- US6
HN1D04FUTE85LF FAQ
1.How can I place an order for HN1D04FUTE85LF through Aetrix?
Please submit a Request for Quotation (RFQ) for HN1D04FUTE85LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN1D04FUTE85LF reliable?
The price and inventory of HN1D04FUTE85LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN1D04FUTE85LF is usually 5 days.
3.What payment methods are accepted for HN1D04FUTE85LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN1D04FUTE85LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN1D04FUTE85LF?
HN1D04FUTE85LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN1D04FUTE85LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN1D04FUTE85LF?
For technical support, including HN1D04FUTE85LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN1D04FUTE85LF requirements.
6.How does Aetrix verify that HN1D04FUTE85LF is sourced from the original manufacturer or authorized distributors?
All HN1D04FUTE85LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN1D04FUTE85LF meets industry standards.
7.What is the process for return or replacement of HN1D04FUTE85LF?
All HN1D04FUTE85LF units undergo pre-shipment inspection (PSI). If there is an issue with HN1D04FUTE85LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN1D04FUTE85LF part is unused and in its original packaging.
Return procedure for HN1D04FUTE85LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HN1D04FUTE85LF Tags
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