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Toshiba Semiconductor and Storage HN2S02JE(TE85L,F)
- Part No.:
- HN2S02JE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Diode Arrays
- Package:
- SOT-553
- Datasheet:
-
HN2S02JE(TE85L,F).pdf
- Description:
- DIODE ARRAY SCHOTT 40V 100MA ESV
- Quantity:
- Payment:
- Shipping:
Inventory:6
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Product details
Overview
HN2S02JE(TE85L,F) from TOSHIBA is a dual-channel silicon epitaxial Schottky barrier diode optimized for high-speed switching applications. It features low forward voltage (VF = 0.54 V typ. at IF = 100 mA), low reverse current (IR ≤ 5 μA at VR = 40 V), and total capacitance of 18 pF at 1 MHz, enabling efficient rectification and signal clamping in compact DC-DC converters.
For engineers reviewing the HN2S02JE(TE85L,F) datasheet, HN2S02JE(TE85L,F) pinout, HN2S02JE(TE85L,F) application, or HN2S02JE(TE85L,F) equivalent, key selection considerations include its dual-anode/dual-cathode configuration, 40 V reverse voltage rating, 100 mA average forward current per diode, thermal derating behavior, and JEITA package code 1-2W1B.
Technical Context
The HN2S02JE(TE85L,F) integrates two independent Schottky diodes in a single 5-pin surface-mount package with shared cathode/anode isolation. Its epitaxial construction enables fast recovery (trr not specified but implied by Schottky type) and low conduction loss, supporting operation up to 100°C ambient temperature.
Each diode channel supports 100 mA average forward current (IO) and withstands 40 V DC reverse voltage (VR), with surge capability of 1 A for 10 ms. The device's 18 pF total capacitance at zero bias and 1 MHz makes it suitable for high-frequency switching nodes where parasitic capacitance must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Diode Count | Dual independent Schottky diodes in one package |
| Max Reverse Voltage (VR) | 40 V - sets maximum blocking capability per diode channel |
| Forward Voltage (VF) | 0.54 V typ. at 100 mA - reduces conduction loss in power path |
| Reverse Current (IR) | ≤ 5 μA at 40 V - minimizes leakage in standby or high-impedance states |
| Total Capacitance (CT) | 18 pF at VR = 0 V, f = 1 MHz - limits high-frequency signal distortion |
| Avg Forward Current (IO) | 100 mA per diode - defines continuous DC load handling per channel |
| Junction Temp (Tj) | 125 °C - constrains thermal design margin under full load |
Pinout & Package
Package: 5-pin surface-mount plastic package, JEITA code 1-2W1B (equivalent to SOT-353/SC-88A footprint), 0.003 g typical weight.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode 1 | Input terminal for first Schottky diode; connects to source/switch node |
| 2 | No Connect | Internally unconnected; no electrical function or routing required |
| 3 | Anode 2 | Input terminal for second Schottky diode; enables dual-path topology |
| 4 | Cathode 2 | Output terminal for second diode; common return path with Pin 5 |
| 5 | Cathode 1 | Output terminal for first diode; electrically tied to Pin 4 internally |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent Schottky structure | Enables two separate high-efficiency rectification paths without cross-talk |
| Low VF at 100 mA | 0.54 V typ. - improves power conversion efficiency in low-voltage DC-DC stages |
| Low IR at rated VR | ≤ 5 μA at 40 V - preserves battery life and signal integrity in always-on circuits |
| 18 pF junction capacitance | Minimizes capacitive loading on fast-switching nodes (e.g., synchronous rectifier gates) |
| 125 °C max junction temperature | Supports operation in thermally constrained industrial and automotive cabin environments |
Applications
| DC-DC Converter Output Rectification | High-Speed Signal Clamping |
|---|---|
Use Scenario: Used in 3.3 V/5 V buck converter outputs to replace slower PN diodes and reduce conduction loss. IC Role / Device Role / Timing Role: Dual Schottky rectifier providing low-loss, fast-recovery path for output current. Use Value: Achieves >92% efficiency at 100 mA load due to 0.54 V VF and minimal reverse recovery charge. | Use Scenario: Placed across data lines (e.g., USB D+/D−, I²C SDA/SCL) to limit overvoltage transients. IC Role / Device Role / Timing Role: Bidirectional clamping diode pair protecting interface ICs from ESD and overshoot. Use Value: 18 pF capacitance avoids signal integrity degradation while limiting voltage to <0.6 V above rail. |
| Redundant Power OR'ing | Low-Power Battery Backup Switching |
Use Scenario: Employed in dual-input power systems (e.g., main + backup supply) to prevent backfeed and enable seamless switchover. IC Role / Device Role / Timing Role: Independent anode/cathode terminals allow isolated forward conduction paths per supply rail. Use Value: 5 μA max IR ensures negligible quiescent current draw when one input is inactive. | Use Scenario: Integrated into coin-cell backup circuits for real-time clocks or SRAM retention during main power loss. IC Role / Device Role / Timing Role: Low-leakage Schottky switch isolating backup battery from system load. Use Value: Sub-μA effective leakage (per diode) extends CR2032 battery life beyond 5 years in standby. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB088MM-40TR | Single-channel, 40 V, 200 mA IO, VF = 0.52 V typ. at 100 mA, same 18 pF CT | Requires two devices for dual-path use; occupies more PCB area | Preferred when layout allows discrete placement and higher per-diode current is needed |
| NSR20F40NXT5G | Dual Schottky, 40 V, 200 mA IO per diode, VF = 0.47 V typ. at 100 mA, CT = 25 pF | Lower VF improves efficiency but higher CT may affect >10 MHz signal integrity | Best for high-current, low-VF priority designs where capacitance impact is acceptable |
Compared with RB088MM-40TR and NSR20F40NXT5G, the HN2S02JE(TE85L,F) offers integrated dual functionality in minimal footprint (1-2W1B), balanced VF–CT trade-off, and proven reliability in long-lifecycle consumer and industrial power modules since 2002.
Availability
HN2S02JE(TE85L,F) is available at Aetrix Electronics and suitable for DC-DC converters, signal clamping circuits, redundant power OR'ing, and low-power battery backup switching requiring stable component supply and long-term manufacturability.
Supply support for HN2S02JE(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency and reliability.
The HN2S02JE(TE85L,F) belongs to Toshiba's legacy Schottky diode family targeting high-speed switching in space-constrained portable and industrial power supplies.
FAQ
What is the pin configuration of the HN2S02JE(TE85L,F)?
The HN2S02JE(TE85L,F) uses a 5-pin top-view layout: Pin 1 = Anode 1, Pin 2 = No Connect, Pin 3 = Anode 2, Pin 4 = Cathode 2, Pin 5 = Cathode 1. Pins 4 and 5 are electrically common cathodes, enabling independent anode control for dual-path operation. This configuration is confirmed in Toshiba's official pin assignment diagram.
Does the HN2S02JE(TE85L,F) support bidirectional current flow?
No - the HN2S02JE(TE85L,F) consists of two unidirectional Schottky diodes. Current flows only from anode to cathode in each channel (Pin 1→5 and Pin 3→4). Reverse conduction is blocked up to 40 V, and the NC pin (Pin 2) has no internal connection. Bidirectional operation requires external circuitry or alternate device types.
What is the thermal derating behavior of the HN2S02JE(TE85L,F)?
The HN2S02JE(TE85L,F) has a total power dissipation rating of 100 mW at Ta = 25°C, decreasing linearly with ambient temperature. At 100°C ambient, usable power drops to ~50 mW. Derating follows P = 100 mW × (1 − (Ta − 25)/100), consistent with Toshiba's thermal guidelines for 1-2W1B packages.
Is the HN2S02JE(TE85L,F) RoHS compliant?
Yes - the HN2S02JE(TE85L,F) meets EU RoHS Directive 2011/65/EU requirements. Toshiba confirms lead-free terminations and halogen-free molding compound in compliance documentation dated 2026-04-07, and the part carries appropriate marking per JEDEC standards.
Can the HN2S02JE(TE85L,F) replace a single Schottky diode in existing designs?
Only if the design accommodates its dual-diode topology and pinout. Using only one channel (e.g., Pins 1 and 5) is possible, but Pin 2 must remain unconnected and Pins 3–4 left floating or grounded per layout rules. Full replacement requires verifying that unused pins do not introduce parasitic coupling or violate spacing rules in the target PCB stack-up.
HN2S02JE(TE85L,F) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOT-553
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 100mA
- Voltage - Forward (Vf) (Max) @ If:
- 600 mV @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 5 µA @ 40 V
- Operating Temperature - Junction:
- 125°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ESV
HN2S02JE(TE85L,F) FAQ
1.How can I place an order for HN2S02JE(TE85L,F) through Aetrix?
Please submit a Request for Quotation (RFQ) for HN2S02JE(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN2S02JE(TE85L,F) reliable?
The price and inventory of HN2S02JE(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN2S02JE(TE85L,F) is usually 5 days.
3.What payment methods are accepted for HN2S02JE(TE85L,F)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN2S02JE(TE85L,F) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN2S02JE(TE85L,F)?
HN2S02JE(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN2S02JE(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN2S02JE(TE85L,F)?
For technical support, including HN2S02JE(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN2S02JE(TE85L,F) requirements.
6.How does Aetrix verify that HN2S02JE(TE85L,F) is sourced from the original manufacturer or authorized distributors?
All HN2S02JE(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN2S02JE(TE85L,F) meets industry standards.
7.What is the process for return or replacement of HN2S02JE(TE85L,F)?
All HN2S02JE(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with HN2S02JE(TE85L,F), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN2S02JE(TE85L,F) part is unused and in its original packaging.
Return procedure for HN2S02JE(TE85L,F):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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