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Toshiba Semiconductor and Storage HN2S03FUTE85LF
- Part No.:
- HN2S03FUTE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
HN2S03FUTE85LF.pdf
- Description:
- DIODE ARRAY SCHOTT 20V 50MA US6
- Quantity:
- Payment:
- Shipping:
Inventory:3,813
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Product details
Overview
HN2S03FUTE85LF from Toshiba is a silicon epitaxial Schottky barrier diode array containing three independent low-VF switching diodes in a single SOT-363 (SC-88) package. It delivers VF(3) = 0.50 V (typ.), IR = 0.5 µA (max), CT = 3.9 pF (typ.), 20 V reverse voltage rating, and −40 to +110 °C operating temperature range - optimized for high-speed logic clamping and signal routing in portable DC-DC converter feedback paths.
For engineers reviewing the HN2S03FUTE85LF datasheet, HN2S03FUTE85LF pinout, HN2S03FUTE85LF application, or HN2S03FUTE85LF equivalent, key selection criteria include verified triple-diode integration, sub-0.55 V forward drop at 50 mA per diode, <0.5 µA leakage at 20 V, low 3.9 pF junction capacitance, and JEDEC-compliant SOT-363 thermal and mounting compatibility.
Technical Context
This triple Schottky diode array uses epitaxial silicon construction to achieve fast recovery with no minority-carrier storage delay. Each of the three diodes shares identical electrical characteristics - including matched VF and CT - enabling consistent performance across parallel or series-connected signal paths in level-shifting and OR-ing circuits.
The device operates within a −40 to +110 °C ambient range and supports continuous 50 mA average forward current per diode (derated to 75 % when using two or three diodes simultaneously). Its 200 mW total power dissipation is thermally managed via the SOT-363 leadframe structure and 6.2 mg mass.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR | 20 V - Maximum continuous reverse bias before significant leakage or breakdown in normal operation |
| VF(3) | 0.50 V (typ.) at IF = 50 mA - Enables low-loss voltage translation and minimizes conduction loss in compact power rails |
| IR | 0.5 µA (max.) at VR = 20 V - Ensures minimal standby current in battery-sensitive signal conditioning circuits |
| CT | 3.9 pF (typ.) at VR = 0 V, f = 1 MHz - Supports >100 MHz signal integrity in high-speed data line clamping |
| IO | 50 mA (per diode, derated) - Specifies usable continuous forward current under thermal equilibrium in multi-diode configurations |
| Topr | −40 to +110 °C - Validates suitability for automotive cabin electronics and industrial control interface modules |
Pinout & Package
HN2S03FUTE85LF is housed in a JEDEC-standard SOT-363 (SC-88) surface-mount package with six terminals, measuring 2.2 × 2.2 × 1.1 mm and weighing 6.2 mg. The package features gull-wing leads compatible with standard reflow profiles and automated placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 | Input node for first Schottky path; connects to source-side of clamping or OR-ing function |
| 2 | Cathode of Diode 1 | Output node for Diode 1; shared cathode configuration enables common-rail output routing |
| 3 | Anode of Diode 2 | Independent input for second switching path; electrically isolated from Diode 1 and Diode 3 |
| 4 | Cathode of Diode 2 | Output node for Diode 2; tied internally to Pin 2 in standard marking orientation per Toshiba datasheet Fig. 2 |
| 5 | Anode of Diode 3 | Third independent anode; allows simultaneous dual-rail clamping or redundant signal protection |
| 6 | Cathode of Diode 3 | Third cathode terminal; matches Pin 2/4 polarity and enables star-grounded cathode layout |
Key Features
| Feature | Design Value |
|---|---|
| Triple independent Schottky diodes | Enables compact integration of three discrete clamping functions without inter-device mismatch |
| Low VF = 0.50 V (typ.) at 50 mA | Reduces forward conduction loss by ≥30 % vs. standard silicon PN diodes in 3.3 V logic interfaces |
| Ultra-low IR = 0.5 µA (max.) at 20 V | Preserves signal integrity in high-impedance analog monitoring nodes and battery-backed circuits |
| Low CT = 3.9 pF (typ.) | Minimizes capacitive loading on >100 MHz clock or data lines during transient suppression |
| SOT-363 package with 0.65 mm pitch | Supports high-density PCB layouts and compatibility with IPC-7351B footprint standards |
Applications
| USB Data Line Protection | DC-DC Converter Feedback Clamping |
|---|---|
Use Scenario: Protecting USB 2.0 D+ and D− lines from ESD transients and overvoltage coupling in portable host devices. IC Role / Device Role / Timing Role: Signal-line Schottky clamp providing bidirectional low-capacitance path to VCC or ground. Use Value: HN2S03FUTE85LF's 3.9 pF CT and 0.5 µA IR prevent signal distortion while maintaining USB full-speed eye diagram compliance. | Use Scenario: Clamping feedback voltage spikes in synchronous buck converters using optocoupler-isolated regulation loops. IC Role / Device Role / Timing Role: Fast-recovery clamp limiting transient overshoot on COMP or FB pins during load-step events. Use Value: HN2S03FUTE85LF's 0.50 V VF ensures precise 2.5 V reference clamping without introducing offset error in error amplifier inputs. |
| Logic-Level Translation | Redundant Power OR-ing |
Use Scenario: Translating 1.8 V GPIO signals to 3.3 V domains in FPGA I/O banks with strict VIH/VIL margins. IC Role / Device Role / Timing Role: Passive level shifter using forward-biased Schottky diodes with pull-up resistors. Use Value: HN2S03FUTE85LF's matched VF across all three diodes guarantees ≤10 mV inter-channel skew in multi-bit bus translation. | Use Scenario: OR-ing two independent 5 V backup supplies in telecom line cards to maintain uptime during primary supply failure. IC Role / Device Role / Timing Role: Low-loss power-path diode enabling seamless switchover with minimal voltage drop. Use Value: HN2S03FUTE85LF's 50 mA per-diode rating and 0.50 V VF reduce power loss by 40 % vs. conventional 1N5819 in 100 mA load sharing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB050M-40TE61 | Single Schottky diode, 40 V VR, 0.52 V VF @ 1 A, SOD-123 package | Lacks triple-diode integration; requires three placements for equivalent functionality | Choose when higher reverse voltage margin is required and board space permits discrete implementation |
| NSR0330HT1G | Single Schottky diode, 30 V VR, 0.45 V VF @ 200 mA, SOD-123 package | Higher IF rating but no multi-diode integration; not pin-compatible | Select for higher-current single-path clamping where triple-diode consolidation is unnecessary |
Compared with RB050M-40TE61 and NSR0330HT1G, HN2S03FUTE85LF uniquely provides three matched Schottky junctions in one SOT-363 footprint - reducing component count, interconnect inductance, and layout area by ≥60 % in multi-signal protection designs.
Availability
HN2S03FUTE85LF is available at Aetrix Electronics and suitable for USB interface protection, DC-DC feedback clamping, and logic-level translation requiring stable component supply, consistent parametric matching, and long-term industrial lifecycle support.
Supply support for HN2S03FUTE85LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components for industrial, consumer, and automotive applications, with emphasis on efficiency, miniaturization, and thermal robustness.
HN2S03FUTE85LF belongs to Toshiba's general-purpose Schottky diode array product line, engineered specifically for space-constrained signal integrity and power-path management in portable and embedded systems.
FAQ
What is the maximum continuous reverse voltage rating for HN2S03FUTE85LF?
HN2S03FUTE85LF has a maximum continuous reverse voltage (VR) rating of 20 V, as specified in its Absolute Maximum Ratings table. This value applies per diode under normal operating conditions at Ta = 25 °C. Exceeding this voltage may cause irreversible breakdown or accelerated degradation of the Schottky junction.
Does HN2S03FUTE85LF support simultaneous conduction across all three diodes?
Yes, HN2S03FUTE85LF supports concurrent forward conduction across all three diodes, but with derated current limits: each diode is rated for 50 mA average forward current individually, and this drops to 37.5 mA per diode when all three operate simultaneously, per Toshiba's 75 % derating rule for multi-diode use.
What is the typical forward voltage of HN2S03FUTE85LF at 50 mA?
The typical forward voltage (VF(3)) of HN2S03FUTE85LF is 0.50 V at IF = 50 mA and Ta = 25 °C, as confirmed in the Electrical Characteristics table. This value reflects the combined effect of epitaxial Schottky barrier height and series resistance, and remains stable across the −40 to +110 °C operating range.
Is HN2S03FUTE85LF RoHS compliant?
Yes, HN2S03FUTE85LF complies with the EU RoHS Directive. Toshiba confirms RoHS compliance for this part in its official environmental documentation, and the device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Full compliance data is available upon request from Aetrix Electronics.
What package type does HN2S03FUTE85LF use?
HN2S03FUTE85LF uses the SOT-363 (also known as SC-88) surface-mount package, a six-terminal JEDEC-standard outline measuring 2.2 × 2.2 × 1.1 mm. It features gull-wing leads with 0.65 mm pitch and is compatible with IPC-7351B footprint recommendations for automated assembly.
HN2S03FUTE85LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 3 Independent
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 20 V
- Current - Average Rectified (Io) (per Diode):
- 50mA
- Voltage - Forward (Vf) (Max) @ If:
- 550 mV @ 50 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 500 nA @ 20 V
- Operating Temperature - Junction:
- 125°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- US6
HN2S03FUTE85LF FAQ
1.How can I place an order for HN2S03FUTE85LF through Aetrix?
Please submit a Request for Quotation (RFQ) for HN2S03FUTE85LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN2S03FUTE85LF reliable?
The price and inventory of HN2S03FUTE85LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN2S03FUTE85LF is usually 5 days.
3.What payment methods are accepted for HN2S03FUTE85LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN2S03FUTE85LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN2S03FUTE85LF?
HN2S03FUTE85LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN2S03FUTE85LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN2S03FUTE85LF?
For technical support, including HN2S03FUTE85LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN2S03FUTE85LF requirements.
6.How does Aetrix verify that HN2S03FUTE85LF is sourced from the original manufacturer or authorized distributors?
All HN2S03FUTE85LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN2S03FUTE85LF meets industry standards.
7.What is the process for return or replacement of HN2S03FUTE85LF?
All HN2S03FUTE85LF units undergo pre-shipment inspection (PSI). If there is an issue with HN2S03FUTE85LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN2S03FUTE85LF part is unused and in its original packaging.
Return procedure for HN2S03FUTE85LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HN2S03FUTE85LF Tags
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