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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Toshiba Semiconductor and Storage HN4A51JTE85LF

Name: HN4A51JTE85LF
Brand: Toshiba Semiconductor and Storage
SKU: HN4A51JTE85LF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HN4A51JTE85LF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Bipolar Transistor Arrays

Package:: SC-74A, SOT-753

Datasheet:: HN4A51JTE85LF.pdf

Description:: TRANS 2PNP DUAL 120V 100MA SMV

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Product details

Overview

HN4A51JTE85LF from Toshiba is a dual PNP epitaxial silicon transistor in a 5-pin SIP package, designed for audio-frequency general-purpose amplification with V_CEO = −120 V, h_FE = 200–700, f_T = 100 MHz (typ.), NF = 1 dB (typ.), and low-noise linear gain characteristics. It serves as a matched-pair amplifier stage in discrete audio preamplifiers and signal conditioning circuits.

For engineers reviewing the HN4A51JTE85LF datasheet, HN4A51JTE85LF pinout, HN4A51JTE85LF application, or HN4A51JTE85LF equivalent, key selection criteria include high-voltage PNP operation, verified h_FE linearity across bias points, low-noise performance at 1 kHz, dual-element thermal coupling, and JEITA-compliant 2-3L1A package footprint compatibility.

Technical Context

This device integrates two electrically isolated but thermally coupled PNP transistors in a single monolithic die, sharing common absolute maximum ratings (e.g., V_CEO = −120 V, P_C = 300 mW total) and identical electrical characteristics (h_FE, f_T, NF) per element. Its PCT process ensures stable h_FE linearity-quantified by h_FE(I_C = −0.1 mA)/h_FE(I_C = −2 mA) = 0.95 (typ.)-critical for low-distortion audio gain stages.

The dual configuration supports balanced differential pair topologies or cascode arrangements where matched gain and noise behavior between Q1 and Q2 are essential. Its 4 pF Cob (at V_CB = −10 V) and 100 MHz f_T support stable operation up to mid-audio frequencies without unintended resonance or phase shift in feedback networks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−120 V: Enables use in high-voltage audio rails (e.g., ±60 V supplies) without breakdown risk.
h_FE	200–700 at V_CE = −6 V, I_C = −2 mA: Supports wide bias flexibility while maintaining gain stability.
f_T	100 MHz (typ.): Ensures adequate bandwidth for full audio spectrum (20 Hz–20 kHz) with margin for slew rate and transient response.
NF	1 dB (typ. at 1 kHz, R_G = 10 kΩ): Minimizes added noise in sensitive microphone or phono preamp inputs.
C_ob	4 pF (at V_CB = −10 V): Limits Miller capacitance impact on high-frequency gain roll-off in common-emitter stages.
P_C (total)	300 mW: Allows combined dissipation of both transistors; max 200 mW per element prevents thermal runaway.

Pinout & Package

HN4A51JTE85LF uses the JEITA-standard 2-3L1A 5-pin single-in-line (SIP) package, 3.4 mm pitch, 0.014 g typical weight. Pin numbering is top-view, with pins 1–5 assigned as E1, B, E2, C2, C1 respectively.

Pin/Terminal	Circuit Role	Design Meaning
1 (E1)	Emitter of Transistor Q1	Provides low-impedance current sink path for first transistor; electrically isolated but thermally coupled to Q2.
2 (B)	Common Base Connection	Shared base terminal enables synchronized biasing of both transistors in differential or push-pull configurations.
3 (E2)	Emitter of Transistor Q2	Independent emitter node for second transistor; allows independent emitter degeneration or current sensing.
4 (C2)	Collector of Transistor Q2	High-voltage output node rated to −120 V; used for active load or cascode drain in multi-stage amps.
5 (C1)	Collector of Transistor Q1	Primary high-voltage output; paired with C2 for complementary output drive or balanced feedback paths.

Key Features

Feature	Design Value
Matched dual-PNP topology	Q1 and Q2 share identical h_FE, f_T, and NF specs under same test conditions-enables precise differential gain matching without external trimming.
High-voltage capability	V_CEO = V_CBO = −120 V supports operation in Class-A/B audio output stages with ±50 V rails and headroom for transient spikes.
Verified h_FE linearity	h_FE ratio ≥ 0.95 across I_C = −0.1 mA to −2 mA ensures minimal harmonic distortion in small-signal amplification.
Low-noise design	1 dB NF at 1 kHz with 10 kΩ source resistance meets requirements for moving-magnet phono preamps and condenser mic front-ends.

Applications

Phono Preamp Stage	Discrete Audio Power Driver
Use Scenario: Amplifying low-level signals from magnetic turntable cartridges before RIAA equalization. IC Role / Device Role / Timing Role: Dual-PNP voltage amplifier providing high input impedance, low noise, and precise gain matching between left/right channels. Use Value: 1 dB NF and h_FE linearity preserve signal integrity and minimize intermodulation distortion in critical analog playback paths.	Use Scenario: Driving Class-AB output stages in compact hi-fi amplifiers using discrete transistor topologies. IC Role / Device Role / Timing Role: High-voltage PNP driver pair delivering controlled current into output transistor bases with thermal tracking. Use Value: Shared junction temperature and matched h_FE reduce thermal drift and improve bias stability across operating temperature range.
Instrumentation Signal Conditioning	Industrial Analog Sensor Interface
Use Scenario: Low-noise amplification of millivolt-level outputs from precision thermocouples or strain gauges. IC Role / Device Role / Timing Role: First-stage PNP amplifier in a 3-opamp instrumentation topology, leveraging high h_FE for low input bias current. Use Value: 200–700 h_FE minimizes base current error contribution, improving DC accuracy in µV-level measurements.	Use Scenario: Isolating and amplifying analog sensor outputs in factory automation systems with 24 V supply rails. IC Role / Device Role / Timing Role: High-voltage PNP buffer stage interfacing 4–20 mA loop receivers to ADC front-ends. Use Value: −120 V V_CEO withstands industrial transients and surge events without latch-up or degradation.

Phono Preamp Stage

Discrete Audio Power Driver

Use Scenario: Amplifying low-level signals from magnetic turntable cartridges before RIAA equalization.

IC Role / Device Role / Timing Role: Dual-PNP voltage amplifier providing high input impedance, low noise, and precise gain matching between left/right channels.

Use Value: 1 dB NF and h_FE linearity preserve signal integrity and minimize intermodulation distortion in critical analog playback paths.

Use Scenario: Driving Class-AB output stages in compact hi-fi amplifiers using discrete transistor topologies.

IC Role / Device Role / Timing Role: High-voltage PNP driver pair delivering controlled current into output transistor bases with thermal tracking.

Use Value: Shared junction temperature and matched h_FE reduce thermal drift and improve bias stability across operating temperature range.

Instrumentation Signal Conditioning

Industrial Analog Sensor Interface

Use Scenario: Low-noise amplification of millivolt-level outputs from precision thermocouples or strain gauges.

IC Role / Device Role / Timing Role: First-stage PNP amplifier in a 3-opamp instrumentation topology, leveraging high h_FE for low input bias current.

Use Value: 200–700 h_FE minimizes base current error contribution, improving DC accuracy in µV-level measurements.

Use Scenario: Isolating and amplifying analog sensor outputs in factory automation systems with 24 V supply rails.

IC Role / Device Role / Timing Role: High-voltage PNP buffer stage interfacing 4–20 mA loop receivers to ADC front-ends.

Use Value: −120 V V_CEO withstands industrial transients and surge events without latch-up or degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-PNP amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
HN4A52JTE85LF	Same package and pinout; h_FE = 300–1000 (higher gain band), f_T = 80 MHz (lower bandwidth)	Better suited for low-frequency, high-gain DC-coupled stages; less optimal for wideband audio due to reduced f_T	Select when higher minimum h_FE is required and bandwidth >80 MHz is not critical.
UPA2792GR-E1-AY	Dual PNP in SOP-8; V_CEO = −50 V (lower voltage rating); h_FE = 120–470; NF = 1.5 dB (higher noise)	Surface-mount alternative for space-constrained PCBs; unsuitable for >±50 V rails or ultra-low-noise phono stages	Choose only for cost-sensitive, lower-voltage consumer audio designs where SIP mounting is impractical.

Compared with HN4A51JTE85LF, HN4A52JTE85LF trades bandwidth for guaranteed higher gain, while UPA2792GR-E1-AY sacrifices voltage rating and noise performance for SMT compatibility-neither is pin-compatible, and both require layout and bias network adjustments.

Availability

HN4A51JTE85LF is available at Aetrix Electronics and suitable for audio preamplification, discrete power amplifier driver stages, instrumentation signal conditioning, and industrial analog sensor interfaces requiring stable component supply and long-term obsolescence management.

Supply support for HN4A51JTE85LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, thermal performance, and application-specific optimization.

HN4A51JTE85LF belongs to Toshiba's legacy audio-grade dual-transistor family, engineered specifically for high-fidelity analog signal paths where matched PNP characteristics, low noise, and high-voltage operation are mandatory.

FAQ

What is the maximum collector-emitter voltage rating for HN4A51JTE85LF?

HN4A51JTE85LF has a guaranteed V_CEO rating of −120 V per transistor under standard test conditions (Ta = 25°C). This rating applies individually to Q1 and Q2 and is validated across the full specified storage temperature range (−55°C to +150°C). Exceeding this voltage risks avalanche breakdown and permanent degradation of HN4A51JTE85LF's PCT-process epitaxial structure.

Does HN4A51JTE85LF support differential pair configurations?

Yes, HN4A51JTE85LF is explicitly designed for differential use: its dual PNP elements share a common base terminal (Pin 2) and exhibit tightly matched h_FE, f_T, and noise figure. The thermal coupling between Q1 and Q2 ensures consistent bias tracking-making HN4A51JTE85LF ideal for discrete emitter-coupled pairs in audio and instrumentation circuits.

What is the noise figure specification for HN4A51JTE85LF and under what conditions is it measured?

HN4A51JTE85LF has a typical noise figure of 1.0 dB, measured at V_CE = −6 V, I_C = −0.1 mA, f = 1 kHz, and R_G = 10 kΩ. This value reflects its suitability for low-level signal amplification; actual system noise will depend on source impedance matching and PCB layout-but HN4A51JTE85LF's intrinsic NF remains stable across its qualified operating range.

Is HN4A51JTE85LF RoHS compliant?

HN4A51JTE85LF complies with EU RoHS Directive 2011/65/EU and related amendments, as confirmed by Toshiba's material declarations and manufacturing records. Lead-free solderability is supported per J-STD-020, and the 2-3L1A package uses matte tin plating. Full compliance documentation for HN4A51JTE85LF is available upon request through Aetrix Electronics' technical support portal.

How is thermal derating applied to the total power dissipation of HN4A51JTE85LF?

HN4A51JTE85LF has a total collector power dissipation limit of 300 mW, but no single element may exceed 200 mW. Derating follows a linear curve: above 25°C ambient, PC reduces by 2.4 mW/°C (per element) up to T_a = 125°C, where max per-element dissipation drops to 80 mW. This ensures safe junction temperature (T_j ≤ 150°C) and long-term reliability of HN4A51JTE85LF in continuous operation.

HN4A51JTE85LF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: SC-74A, SOT-753

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 PNP (Dual)

Current - Collector (Ic) (Max):: 100mA

Voltage - Collector Emitter Breakdown (Max):: 120V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 6V

Power - Max:: 300mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SMV

HN4A51JTE85LF FAQ

1.How can I place an order for HN4A51JTE85LF through Aetrix?

Please submit a Request for Quotation (RFQ) for HN4A51JTE85LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HN4A51JTE85LF reliable?

The price and inventory of HN4A51JTE85LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN4A51JTE85LF is usually 5 days.

3.What payment methods are accepted for HN4A51JTE85LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN4A51JTE85LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HN4A51JTE85LF?

HN4A51JTE85LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HN4A51JTE85LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HN4A51JTE85LF?

For technical support, including HN4A51JTE85LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN4A51JTE85LF requirements.

6.How does Aetrix verify that HN4A51JTE85LF is sourced from the original manufacturer or authorized distributors?

All HN4A51JTE85LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN4A51JTE85LF meets industry standards.

7.What is the process for return or replacement of HN4A51JTE85LF?

All HN4A51JTE85LF units undergo pre-shipment inspection (PSI). If there is an issue with HN4A51JTE85LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HN4A51JTE85LF part is unused and in its original packaging.

Return procedure for HN4A51JTE85LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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