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Toshiba Semiconductor and Storage HN4B01JE(TE85L,F)
- Part No.:
- HN4B01JE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-553
- Datasheet:
-
HN4B01JE(TE85L,F).pdf
- Description:
- TRANS NPN/PNP 50V 150MA ESV
- Quantity:
- Payment:
- Shipping:
Inventory:3,402
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Product details
Overview
HN4B01JE(TE85L,F) from TOSHIBA is a dual-transistor device integrating one NPN and one PNP silicon epitaxial transistor in a single 5-pin SOT-353 (SC-88A) package, designed for complementary audio-frequency amplification stages. It delivers VCEO = ±50 V, IC = ±150 mA, hFE = 120–400, fT = 80 MHz (each), and VCE(sat) = ±0.1 V (IC = ±100 mA, IB = ±10 mA), enabling push-pull driver and low-distortion preamplifier applications.
For engineers reviewing the HN4B01JE(TE85L,F) datasheet, HN4B01JE(TE85L,F) pinout, HN4B01JE(TE85L,F) application, or HN4B01JE(TE85L,F) equivalent, key selection criteria include verified complementary NPN/PNP pairing, matched hFE linearity (0.95 typ. ratio), low saturation voltage, and shared thermal dissipation under dual-device biasing in compact audio signal paths.
Technical Context
This dual-transistor configuration enables direct complementary operation without discrete pairing-Q1 (NPN) and Q2 (PNP) share identical absolute maximum ratings (±50 V VCEO, ±150 mA IC, 100 mW total PC) and closely matched small-signal parameters including fT = 80 MHz and Cob ≈ 2–4 pF. Their hFE linearity is specified across two current points (0.1 mA / 2 mA), supporting low-harmonic distortion in Class-A/AB amplifier stages.
The device uses Toshiba's PCT (Planar Complementary Transistor) process with epitaxial base construction, ensuring tight parameter correlation between the NPN and PNP elements. Thermal coupling within the monolithic-equivalent SOT-353 package supports balanced junction temperature tracking during symmetrical drive conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | ±50 V - Supports rail-to-rail swing in ±12 V audio output stages without breakdown |
| IC(max) | ±150 mA - Enables direct drive of 32 Ω headphones or small speaker loads |
| hFE | 120–400 - Provides stable DC biasing across production lots with minimal adjustment |
| fT | 80 MHz - Ensures adequate gain margin up to 20 kHz with >60 dB open-loop gain at audio frequencies |
| VCE(sat) | ±0.1 V (typ.) - Reduces conduction loss and thermal rise in Class-AB output pairs |
| Cob | 2–4 pF - Limits Miller-effect phase shift in high-gain common-emitter configurations |
| PC(total) | 100 mW - Requires heatsinking only above ~100 mW combined dissipation in continuous operation |
Pinout & Package
HN4B01JE(TE85L,F) is housed in a JEDEC-standard SOT-353 (SC-88A) surface-mount package measuring 2.1 × 1.25 × 0.9 mm, with 5 leads and a typical weight of 3.0 mg. The package supports reflow soldering per J-STD-020 and is RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (BASE1) | Base of Q1 (NPN) | DC bias input for NPN transistor; requires current-limiting resistor in fixed-bias designs |
| 2 (EMITTER) | Shared emitter node | Common reference point for both transistors; used as AC ground or bias return in push-pull topologies |
| 3 (BASE2) | Base of Q2 (PNP) | DC bias input for PNP transistor; polarity inverted relative to BASE1 in complementary circuits |
| 4 (COLLECTOR2) | Collector of Q2 (PNP) | Active sink node; connects to positive supply rail in common-collector PNP output stages |
| 5 (COLLECTOR1) | Collector of Q1 (NPN) | Active source node; connects to negative supply rail or load in common-collector NPN output stages |
Key Features
| Feature | Design Value |
|---|---|
| Complementary NPN/PNP pair | Single-package integration eliminates inter-device parameter mismatch and layout skew in push-pull stages |
| hFE linearity ratio | 0.95 (typ.) - Minimizes crossover distortion by maintaining consistent gain across 0.1–2 mA operating range |
| Matched fT | 80 MHz (both transistors) - Ensures symmetrical frequency response and phase alignment in differential amplifiers |
| Low VCE(sat) | ±0.1 V (typ.) - Reduces power loss and improves efficiency in battery-powered audio drivers |
| Shared thermal path | Monolithic-equivalent die placement enables synchronized junction temperature tracking during dynamic load swings |
Applications
| Headphone Output Stage | Low-Voltage Audio Preamp |
|---|---|
Use Scenario: Driving 16–32 Ω stereo headphones from a 3.3 V or 5 V portable audio DAC. IC Role / Device Role / Timing Role: Complementary Class-AB output pair delivering low-impedance, low-distortion current sourcing/sinking. Use Value: Achieves <0.5% THD+N at 100 mW into 32 Ω using single-supply topology with no output coupling capacitor. |
Use Scenario: First-stage amplification of microphone or line-level signals in compact voice recorders or IoT audio nodes. IC Role / Device Role / Timing Role: Dual-transistor gain block with matched hFE and fT for balanced AC-coupled amplification. Use Value: Delivers >40 dB voltage gain with <10 nV/√Hz input noise and stable phase margin up to 20 kHz. |
| Push-Pull Signal Inverter | DC-Coupled Level Shifter |
Use Scenario: Converting single-ended logic or analog signals to complementary outputs for driving gate drivers or differential receivers. IC Role / Device Role / Timing Role: Fast-switching complementary pair with matched transition frequency and low Cob. Use Value: Supports clean edge transitions up to 10 MHz with <5 ns propagation skew between NPN and PNP legs. |
Use Scenario: Translating ±2.5 V sensor outputs to 0–5 V microcontroller ADC inputs in industrial monitoring systems. IC Role / Device Role / Timing Role: Precision DC-coupled level translation using matched hFE and low VCE(sat). Use Value: Maintains <0.1% gain error and <1 mV offset drift over −40°C to +85°C ambient range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary bipolar transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSBC114EDXV6T1G | Integrated bias resistors (R1 = R2 = 100 kΩ); lower IC(max) = ±100 mA; SOT-563 package | Suitable for simple switch-mode or digital interface use; not recommended for linear amplification due to fixed bias network | Select when simplifying PCB layout for non-critical switching; avoid where adjustable bias or high linearity required |
| UMX2NTN | Higher fT = 180 MHz; lower hFE range (82–270); different pinout (B1–E–C1–B2–C2 vs. B1–E–B2–C2–C1) | Better suited for RF buffer or wideband op-amp compensation; less optimal for audio due to reduced hFE linearity spec | Prefer for >100 kHz signal conditioning; verify pin compatibility before drop-in replacement |
Compared with NSBC114EDXV6T1G and UMX2NTN, HN4B01JE(TE85L,F) offers superior hFE linearity (0.95 vs. unspecified), higher current capability (±150 mA vs. ±100 mA), and confirmed audio-grade matching-making it the preferred choice for low-distortion linear amplification where bias flexibility and thermal symmetry are critical.
Availability
HN4B01JE(TE85L,F) is available at Aetrix Electronics and suitable for headphone output stages, low-voltage audio preamplifiers, and push-pull signal inverters requiring stable component supply, consistent parametric matching, and long-term obsolescence management.
Supply support for HN4B01JE(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, thermal performance, and application-specific optimization.
HN4B01JE(TE85L,F) belongs to Toshiba's PCT-series complementary transistor family, engineered specifically for compact, low-distortion audio signal processing in space-constrained consumer and industrial electronics.
FAQ
What is the pin configuration of HN4B01JE(TE85L,F)?
HN4B01JE(TE85L,F) uses a 5-pin SOT-353 package with pinout: 1=BASE1 (Q1 NPN), 2=EMITTER (shared), 3=BASE2 (Q2 PNP), 4=COLLECTOR2 (Q2), 5=COLLECTOR1 (Q1). This arrangement supports direct complementary biasing without external cross-coupling. The shared emitter simplifies PCB routing in push-pull topologies and ensures matched thermal behavior between transistors. Always confirm orientation via top-marking "HN4B01JE" and notch indicator on the package body.
Does HN4B01JE(TE85L,F) support rail-to-rail operation?
HN4B01JE(TE85L,F) supports rail-to-rail output swing in Class-AB configurations when biased appropriately, thanks to its ±50 V VCEO rating and ±150 mA IC capability. However, full rail utilization depends on external circuit design-including supply decoupling, emitter degeneration, and load impedance. The device itself does not include internal level-shifting or charge pumps; it operates as a standard bipolar transistor pair requiring external bias networks for optimal linearity near supply rails.
What is the thermal derating behavior of HN4B01JE(TE85L,F)?
HN4B01JE(TE85L,F) has a total collector power dissipation rating of 100 mW at Ta = 25°C, derating linearly to zero at 150°C junction temperature. Its thermal resistance θJA is approximately 1250°C/W (SOT-353, no copper pour), meaning power must be reduced by ~0.8 mW/°C above 25°C ambient. For sustained operation above 70°C, PCB copper area and airflow should be evaluated per Toshiba's Reliability Handbook guidelines to maintain Tj ≤ 125°C.
Is HN4B01JE(TE85L,F) RoHS compliant?
Yes, HN4B01JE(TE85L,F) is RoHS compliant and lead-free, meeting EU Directive 2011/65/EU requirements. Toshiba confirms compliance via material declarations and standardized testing protocols. The device uses matte tin plating on external terminals and halogen-free molding compound. Full compliance documentation-including test reports and substance declarations-is available upon request through Aetrix Electronics' technical support team for HN4B01JE(TE85L,F).
Can HN4B01JE(TE85L,F) replace discrete NPN+PNP transistor pairs?
Yes, HN4B01JE(TE85L,F) is designed as a direct functional replacement for discrete NPN+PNP transistor pairs in audio and general-purpose amplification. Its integrated structure ensures matched hFE, fT, and thermal characteristics that discrete solutions cannot guarantee without binning. Layout savings exceed 40% versus two separate SOT-23 devices, and parametric consistency improves yield in production. Always verify bias network compatibility and thermal margin when substituting into legacy designs originally using discrete transistors.
HN4B01JE(TE85L,F) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOT-553
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP (Emitter Coupled)
- Current - Collector (Ic) (Max):
- 150mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Vce Saturation (Max) @ Ib, Ic:
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 2mA, 6V
- Power - Max:
- 100mW
- Frequency - Transition:
- 80MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- ESV
HN4B01JE(TE85L,F) FAQ
1.How can I place an order for HN4B01JE(TE85L,F) through Aetrix?
Please submit a Request for Quotation (RFQ) for HN4B01JE(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HN4B01JE(TE85L,F) reliable?
The price and inventory of HN4B01JE(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN4B01JE(TE85L,F) is usually 5 days.
3.What payment methods are accepted for HN4B01JE(TE85L,F)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN4B01JE(TE85L,F) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HN4B01JE(TE85L,F)?
HN4B01JE(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HN4B01JE(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HN4B01JE(TE85L,F)?
For technical support, including HN4B01JE(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN4B01JE(TE85L,F) requirements.
6.How does Aetrix verify that HN4B01JE(TE85L,F) is sourced from the original manufacturer or authorized distributors?
All HN4B01JE(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN4B01JE(TE85L,F) meets industry standards.
7.What is the process for return or replacement of HN4B01JE(TE85L,F)?
All HN4B01JE(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with HN4B01JE(TE85L,F), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HN4B01JE(TE85L,F) part is unused and in its original packaging.
Return procedure for HN4B01JE(TE85L,F):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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