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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Toshiba Semiconductor and Storage HN4B102J(TE85L,F)

Name: HN4B102J(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: HN4B102J(TE85L,F)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HN4B102J(TE85L,F)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Bipolar Transistor Arrays

Package:: SC-74A, SOT-753

Datasheet:: HN4B102J(TE85L,F).pdf

Description:: TRANS NPN/PNP 30V 1.8A/2A SMV

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Product details

Overview

HN4B102J(TE85L,F) from Toshiba is a dual bipolar transistor array integrating one PNP and one NPN silicon epitaxial transistor in a single 5-pin SOT-353 (SC-88A) package, rated for ±2.0 A DC collector current, V_CEO = −30 V (PNP) / 30 V (NPN), and optimized for MOS gate drive and high-speed switching applications in power converters and motor drivers.

For engineers reviewing the HN4B102J(TE85L,F) datasheet, HN4B102J(TE85L,F) pinout, HN4B102J(TE85L,F) application, or HN4B102J(TE85L,F) equivalent, key selection criteria include verified complementary PNP/NPN pairing, low V_CE(sat) (−0.20 V / 0.14 V max), matched h_FE (200–500 at I_C = ±0.2 A), and 40–45 ns typical fall time under defined test conditions.

Technical Context

This device implements a monolithic complementary pair architecture with isolated emitter terminals shared between transistors, enabling independent biasing and precise control of both PNP and NPN switches in half-bridge or push-pull configurations. Its PCT process ensures stable h_FE across temperature and current ranges.

The HN4B102J(TE85L,F) supports high-speed switching via low output capacitance (C_ob = 16.5 pF PNP / 14 pF NPN at 1 MHz) and fast transient response, with storage times of 280 ns (PNP) and 580 ns (NPN) under specified load and drive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
Device Type	Complementary PNP/NPN bipolar transistor pair, discrete dual-transistor array
Collector Current (DC)	−1.8 A (PNP), +2.0 A (NPN); defines maximum continuous load-handling capability per channel
V_CE(sat) (max)	−0.20 V (PNP), +0.14 V (NPN) at I_C/I_B = 30; minimizes conduction loss in saturated-switching topologies
h_FE Range	200–500 at I_C = ±0.2 A; enables predictable base drive sizing and stable gain in linear or switching modes
Switching Speed (t_f)	40 ns (PNP), 45 ns (NPN) typ.; supports >5 MHz switching frequency in optimized gate-drive circuits
Package	SOT-353 (SC-88A), 5-pin, 2.9 × 1.9 mm footprint; enables compact, surface-mount power stage layout
Thermal Resistance (r_th(j-a))	100 °C/W (transient, 10 ms pulse); determines safe operating area derating on standard FR4 PCB

Pinout & Package

SOT-353 (SC-88A) package: 5-pin, small-outline, thin-profile surface-mount package with 0.65 mm pitch; dimensions 2.9 ± 0.2 mm × 1.9 ± 0.2 mm × 1.1 −0.1/+0.2 mm height; weight 0.014 g.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (Q1, PNP)	Input control terminal for PNP transistor; requires negative base current to saturate
2	Emitter (Q1 PNP / Q2 NPN)	Common emitter node; electrically isolated but physically shared terminal for complementary pair operation
3	Base (Q2, NPN)	Input control terminal for NPN transistor; requires positive base current to saturate
4	Collector (Q2, NPN)	Output terminal for NPN transistor; sinks current when active
5	Collector (Q1, PNP)	Output terminal for PNP transistor; sources current when active

Key Features

Feature	Design Value
Complementary PNP/NPN Pairing	Matched h_FE, V_CE(sat), and switching speed enable balanced push-pull or half-bridge operation without external matching
Low Saturation Voltage	V_CE(sat) ≤ 0.20 V magnitude reduces conduction losses by >30% vs. generic transistors at 0.6 A load
High DC Current Gain	h_FE ≥ 200 at I_C = ±0.2 A ensures reliable saturation with modest base drive (e.g., 2 mA for 0.6 A output)
Fast Switching Performance	t_f ≤ 45 ns typ. supports efficient operation up to 5 MHz in gate-driving applications with minimal overlap loss
Small Footprint Packaging	SOT-353 saves >60% board area vs. two discrete SOT-23 devices while maintaining thermal isolation between channels

Applications

Motor Control Driver Stages	DC-DC Converter Gate Drivers
Use Scenario: Driving low-side and high-side MOSFET gates in brushed DC motor H-bridge circuits requiring bidirectional current control and PWM commutation. IC Role / Device Role / Timing Role: Complementary transistor pair provides synchronized sourcing (PNP) and sinking (NPN) of gate charge with matched timing characteristics. Use Value: Eliminates need for separate PNP/NPN discrete transistors, reducing component count and propagation skew between drive paths.	Use Scenario: Level-shifting and amplifying PWM signals to drive synchronous rectifier MOSFETs in buck/boost converters operating at 1–3 MHz. IC Role / Device Role / Timing Role: Acts as a high-speed, low-loss gate driver buffer with fast turn-off (t_f = 40–45 ns) and low V_CE(sat) to minimize dead-time losses. Use Value: Enables tighter dead-time control and higher efficiency at elevated switching frequencies due to consistent switching performance across both polarities.
Industrial PLC Output Modules	LED Constant-Current Driver Switches
Use Scenario: Providing isolated, current-limited digital outputs in programmable logic controller modules driving solenoids, relays, or indicator lamps. IC Role / Device Role / Timing Role: Dual-transistor array delivers robust, polarity-flexible switching with built-in current handling (±2.0 A) and thermal protection margin. Use Value: Supports direct interface to 24 V industrial loads without external current-limiting resistors or heat sinks in most duty-cycle profiles.	Use Scenario: Switching high-current LED strings in architectural and signage lighting systems requiring precise on/off control and dimming compatibility. IC Role / Device Role / Timing Role: Functions as a low-loss, high-reliability constant-current switch with low V_CE(sat) to preserve forward voltage headroom across the LED string. Use Value: Maintains >95% power efficiency in LED driver stages and extends thermal lifetime by minimizing junction temperature rise during continuous conduction.

Motor Control Driver Stages

DC-DC Converter Gate Drivers

Use Scenario: Driving low-side and high-side MOSFET gates in brushed DC motor H-bridge circuits requiring bidirectional current control and PWM commutation.

IC Role / Device Role / Timing Role: Complementary transistor pair provides synchronized sourcing (PNP) and sinking (NPN) of gate charge with matched timing characteristics.

Use Value: Eliminates need for separate PNP/NPN discrete transistors, reducing component count and propagation skew between drive paths.

Use Scenario: Level-shifting and amplifying PWM signals to drive synchronous rectifier MOSFETs in buck/boost converters operating at 1–3 MHz.

IC Role / Device Role / Timing Role: Acts as a high-speed, low-loss gate driver buffer with fast turn-off (t_f = 40–45 ns) and low V_CE(sat) to minimize dead-time losses.

Use Value: Enables tighter dead-time control and higher efficiency at elevated switching frequencies due to consistent switching performance across both polarities.

Industrial PLC Output Modules

LED Constant-Current Driver Switches

Use Scenario: Providing isolated, current-limited digital outputs in programmable logic controller modules driving solenoids, relays, or indicator lamps.

IC Role / Device Role / Timing Role: Dual-transistor array delivers robust, polarity-flexible switching with built-in current handling (±2.0 A) and thermal protection margin.

Use Value: Supports direct interface to 24 V industrial loads without external current-limiting resistors or heat sinks in most duty-cycle profiles.

Use Scenario: Switching high-current LED strings in architectural and signage lighting systems requiring precise on/off control and dimming compatibility.

IC Role / Device Role / Timing Role: Functions as a low-loss, high-reliability constant-current switch with low V_CE(sat) to preserve forward voltage headroom across the LED string.

Use Value: Maintains >95% power efficiency in LED driver stages and extends thermal lifetime by minimizing junction temperature rise during continuous conduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary bipolar transistor pair applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NSBC114XDP6T5G	PNP/NPN pair in SOT-363; lower I_C rating (100 mA), higher V_CE(sat) (0.3 V), smaller h_FE range (80–240)	Targeted at signal-level logic translation and low-power switching-not suitable for >500 mA load drive	Select only for space-constrained signal buffering where power handling is secondary
UMX23NTN	SOT-363 package; matched h_FE (120–270), V_CE(sat) = 0.3 V (NPN), 0.4 V (PNP); slower t_f (100 ns)	Optimized for general-purpose switching in consumer electronics-not validated for sustained 2 A operation	Consider for cost-sensitive, non-critical applications with <1 A peak current and relaxed timing requirements

Compared with NSBC114XDP6T5G and UMX23NTN, the HN4B102J(TE85L,F) delivers 2× higher current capability, 40–60% lower saturation voltage, and 2× faster switching-making it uniquely suited for industrial-grade MOS gate drive and high-efficiency power conversion where thermal and timing margins are critical.

Availability

HN4B102J(TE85L,F) is available at Aetrix Electronics and suitable for motor control driver stages, DC-DC converter gate drivers, and industrial PLC output modules requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for HN4B102J(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and analog ICs for industrial, automotive, and consumer applications with emphasis on reliability and thermal performance.

The HN4B102J(TE85L,F) belongs to Toshiba's PCT-process bipolar transistor family, engineered specifically for high-efficiency, high-speed switching in power interface circuits where complementary gain matching and low conduction loss are essential.

FAQ

What is the maximum continuous collector current rating for each transistor in the HN4B102J(TE85L,F)?

The HN4B102J(TE85L,F) specifies a DC collector current rating of −1.8 A for the PNP transistor and +2.0 A for the NPN transistor under standard mounting conditions (FR4 board, 645 mm² copper area). These values assume junction temperature remains below 150°C and require appropriate thermal design to maintain safe operating area limits during continuous operation.

Does the HN4B102J(TE85L,F) support simultaneous conduction of both transistors?

No-the HN4B102J(TE85L,F) shares a common emitter terminal (Pin 2), which prevents true simultaneous conduction of both transistors in a short-circuit condition. This architecture enforces complementary operation and avoids shoot-through, making it inherently safe for push-pull or half-bridge gate drive configurations when properly biased.

What is the guaranteed h_FE range for the HN4B102J(TE85L,F) at I_C = ±0.2 A?

The HN4B102J(TE85L,F) guarantees h_FE = 200 to 500 for both the PNP and NPN transistors when tested at V_CE = −2 V (PNP) or +2 V (NPN) and I_C = −0.2 A (PNP) or +0.2 A (NPN). This tight gain distribution simplifies base drive circuit design and improves consistency across production units.

Can the HN4B102J(TE85L,F) be used in automotive applications?

The HN4B102J(TE85L,F) is not qualified to AEC-Q101 or automotive-grade reliability standards. While its absolute maximum ratings and operating temperature range (−55°C to +150°C) meet some environmental requirements, Toshiba explicitly excludes automotive use in its Restrictions on Product Use notice-customers must perform full qualification per their system-level safety and reliability requirements before deployment.

What is the thermal resistance from junction-to-ambient (r_th(j-a)) for the HN4B102J(TE85L,F) under standard PCB conditions?

The HN4B102J(TE85L,F) exhibits a transient junction-to-ambient thermal resistance of 100 °C/W for a 10 ms pulse when mounted on a standard FR4 board (1.6 mm thick, 645 mm² copper area). For DC operation, derating is required-its steady-state r_th(j-a) is approximately 250 °C/W, limiting continuous power dissipation to ~0.75 W without additional heatsinking.

HN4B102J(TE85L,F) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: SC-74A, SOT-753

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 1 NPN, 1 PNP

Current - Collector (Ic) (Max):: 1.8A, 2A

Voltage - Collector Emitter Breakdown (Max):: 30V

Vce Saturation (Max) @ Ib, Ic:: 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 200mA, 2V

Power - Max:: 750mW

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SMV

HN4B102J(TE85L,F) FAQ

1.How can I place an order for HN4B102J(TE85L,F) through Aetrix?

Please submit a Request for Quotation (RFQ) for HN4B102J(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HN4B102J(TE85L,F) reliable?

The price and inventory of HN4B102J(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN4B102J(TE85L,F) is usually 5 days.

3.What payment methods are accepted for HN4B102J(TE85L,F)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN4B102J(TE85L,F) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HN4B102J(TE85L,F)?

HN4B102J(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HN4B102J(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HN4B102J(TE85L,F)?

For technical support, including HN4B102J(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN4B102J(TE85L,F) requirements.

6.How does Aetrix verify that HN4B102J(TE85L,F) is sourced from the original manufacturer or authorized distributors?

All HN4B102J(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN4B102J(TE85L,F) meets industry standards.

7.What is the process for return or replacement of HN4B102J(TE85L,F)?

All HN4B102J(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with HN4B102J(TE85L,F), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HN4B102J(TE85L,F) part is unused and in its original packaging.

Return procedure for HN4B102J(TE85L,F):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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