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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Diode Arrays

Toshiba Semiconductor and Storage HN4D02JU(TE85L,F)

Name: HN4D02JU(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: HN4D02JU(TE85L,F)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: HN4D02JU(TE85L,F)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Diode Arrays

Package:: 5-TSSOP, SC-70-5, SOT-353

Datasheet:: HN4D02JU(TE85L,F).pdf

Description:: DIODE ARRAY GP 80V 100MA USV

Quantity:: RFQ Add To RFQ list

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Product details

Overview

HN4D02JU(TE85L,F) from Toshiba Electronic Devices & Storage Corporation is a silicon epitaxial planar dual-common-cathode ultra-high-speed switching diode array with four anodes sharing one cathode. It delivers VF(3) = 0.90 V (typ.), trr = 1.6 ns (typ.), CT = 0.9 pF (typ.), VRM = 85 V, and IFM = 300 mA per unit - used in high-frequency signal routing and RF detector circuits.

For engineers reviewing the HN4D02JU(TE85L,F) datasheet, HN4D02JU(TE85L,F) pinout, HN4D02JU(TE85L,F) application, or HN4D02JU(TE85L,F) equivalent, key selection criteria include reverse recovery speed, low forward voltage at 100 mA, junction capacitance under 1 pF, peak reverse voltage rating, and multi-anode common-cathode topology for compact signal path switching.

Technical Context

This diode array integrates four independent silicon epitaxial planar switching diodes in a single USV (Ultra Small Package) with shared cathode terminal. Each unit supports 300 mA peak forward current and operates up to 150°C junction temperature.

The device is characterized by fast carrier lifetime control enabling 1.6 ns reverse recovery time and low 0.9 pF junction capacitance at 0 V bias and 1 MHz - critical for UHF signal demodulation and high-speed sampling gate applications.

Key Specifications

Parameter	Value and Actual Design Meaning
VRM	85 V - maximum non-repetitive reverse voltage; defines safe operating limit in transient clamping or DC blocking.
trr (typ.)	1.6 ns - measured at IF = 10 mA; enables operation beyond 500 MHz in switching and sampling circuits.
VF(3)	0.90 V (typ.) at IF = 100 mA - low conduction loss for battery-powered RF front-ends.
CT	0.9 pF (typ.) at VR = 0 V, f = 1 MHz - minimizes signal loading in 75 Ω video or 50 Ω RF paths.
IFM per unit	300 mA - peak pulsed current capability per anode; supports short-duration pulse detection without thermal runaway.
Tj max	150 °C - maximum junction temperature; allows use in thermally constrained PCB layouts near power stages.

Pinout & Package

Package: USV (Ultra Small Package), 5-pin surface-mount, 1.6 × 1.6 × 0.55 mm, weight 0.0062 g (typ.). JEITA package code: 2-2L1S.

Pin/Terminal	Circuit Role	Design Meaning
1	Anode 1	Independent P-side connection for first diode unit; routed separately for discrete signal switching.
2	Cathode	Common N-side terminal for all four diodes; serves as shared return path in multiplexed detector designs.
3	Anode 2	Independent P-side connection for second diode unit; enables dual-path RF signal selection.
4	Anode 3	Independent P-side connection for third diode unit; supports triple-input logic-level OR function.
5	Anode 4	Independent P-side connection for fourth diode unit; allows quad-input signal gating in sampling systems.

Key Features

Feature	Design Value
Ultra-fast trr	1.6 ns typ. - enables clean edge transitions in >300 Mbps digital signal routing and pulse shaping.
Low VF at high IF	0.90 V at 100 mA - reduces forward power dissipation to <90 mW per unit, easing thermal design.
Sub-1 pF junction capacitance	0.9 pF at 0 V - preserves signal integrity in 50–75 Ω transmission lines up to 1 GHz.
Four-anode common-cathode topology	Single cathode shared across four anodes - simplifies ground-plane layout and reduces via count in high-density RF modules.

Applications

RF Signal Detector	High-Speed Logic-Level Translator
Use Scenario: Demodulating AM/FM signals in portable radios and IoT sensor transceivers operating at 100–900 MHz. IC Role / Device Role / Timing Role: Passive envelope detector using forward conduction and rapid reverse recovery to extract baseband. Use Value: 1.6 ns trr and 0.9 pF CT minimize distortion and phase shift, preserving modulation fidelity in sub-1 GHz bands.	Use Scenario: Level-shifting TTL/CMOS control signals between 3.3 V and 5 V domains in FPGA I/O banks. IC Role / Device Role / Timing Role: Bidirectional passive translator leveraging low VF and fast switching to reduce propagation delay skew. Use Value: 0.90 V VF at 100 mA ensures minimal voltage drop, while 1.6 ns trr prevents pulse narrowing in 50 MHz clock distribution.
Quad-Input Sampling Gate	Video Sync Separator
Use Scenario: Multiplexing four analog video channels into a single ADC input in broadcast-grade test equipment. IC Role / Device Role / Timing Role: Four independently gated signal paths sharing one cathode return, synchronized by external strobes. Use Value: Matched trr and VF across units ensure ≤50 ps timing skew between channels, critical for multi-channel coherence.	Use Scenario: Extracting composite sync pulses from NTSC/PAL video streams in legacy display controllers. IC Role / Device Role / Timing Role: Fast-switching clamp and peak detector that responds within 2 ns to vertical/horizontal sync edges. Use Value: 0.9 pF CT avoids high-frequency roll-off, preserving sharp sync edge rise times below 10 ns.

RF Signal Detector

High-Speed Logic-Level Translator

Use Scenario: Demodulating AM/FM signals in portable radios and IoT sensor transceivers operating at 100–900 MHz.

IC Role / Device Role / Timing Role: Passive envelope detector using forward conduction and rapid reverse recovery to extract baseband.

Use Value: 1.6 ns trr and 0.9 pF CT minimize distortion and phase shift, preserving modulation fidelity in sub-1 GHz bands.

Use Scenario: Level-shifting TTL/CMOS control signals between 3.3 V and 5 V domains in FPGA I/O banks.

IC Role / Device Role / Timing Role: Bidirectional passive translator leveraging low VF and fast switching to reduce propagation delay skew.

Use Value: 0.90 V VF at 100 mA ensures minimal voltage drop, while 1.6 ns trr prevents pulse narrowing in 50 MHz clock distribution.

Quad-Input Sampling Gate

Video Sync Separator

Use Scenario: Multiplexing four analog video channels into a single ADC input in broadcast-grade test equipment.

IC Role / Device Role / Timing Role: Four independently gated signal paths sharing one cathode return, synchronized by external strobes.

Use Value: Matched trr and VF across units ensure ≤50 ps timing skew between channels, critical for multi-channel coherence.

Use Scenario: Extracting composite sync pulses from NTSC/PAL video streams in legacy display controllers.

IC Role / Device Role / Timing Role: Fast-switching clamp and peak detector that responds within 2 ns to vertical/horizontal sync edges.

Use Value: 0.9 pF CT avoids high-frequency roll-off, preserving sharp sync edge rise times below 10 ns.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-high-speed diode array applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
RB050M-40TFTR	Single Schottky diode, 40 V VRM, no multi-anode structure; VF = 0.45 V at 1 A but trr not specified (Schottky lacks defined trr).	Suitable only for DC/low-frequency clamping; cannot replace HN4D02JU(TE85L,F) in RF detector or sampling gate roles requiring trr & CT specs.	Select only when low VF dominates over speed and multi-anode integration is unnecessary.
BAV99,215	Dual-series-switching diode in SOT-23; VRM = 70 V, trr = 4 ns (typ.), CT = 2 pF - slower and higher capacitance than HN4D02JU(TE85L,F).	Acceptable for <200 MHz signal routing but fails in 75 Ω video sync separation due to excessive CT-induced rise-time degradation.	Choose only if board space permits SOT-23 footprint and 4 ns trr meets system timing margin.

Compared with RB050M-40TFTR and BAV99,215, the HN4D02JU(TE85L,F) uniquely combines quad-anode integration, 1.6 ns trr, and sub-1 pF CT - making it irreplaceable in multi-path RF sampling and high-fidelity video sync extraction where timing skew and capacitive loading are design-critical.

Availability

HN4D02JU(TE85L,F) is available at Aetrix Electronics and suitable for RF detector modules, high-speed logic interface boards, video sync separator circuits, and multi-channel sampling systems requiring stable component supply and consistent parametric performance across production lots.

Supply support for HN4D02JU(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, miniaturization, and energy efficiency.

The HN4D02JU(TE85L,F) belongs to Toshiba's ultra-high-speed switching diode family, engineered specifically for RF demodulation, high-frequency sampling gates, and compact multi-signal routing in space-constrained wireless and video systems.

FAQ

What is the pin configuration of the HN4D02JU(TE85L,F)?

The HN4D02JU(TE85L,F) uses a 5-pin USV package with pins assigned as follows: Pin 1 = Anode 1, Pin 2 = Cathode (common to all four diodes), Pin 3 = Anode 2, Pin 4 = Anode 3, Pin 5 = Anode 4. This configuration enables independent control of four signal paths with shared return, verified in Toshiba's official datasheet Figure 1 and top-view marking diagram.

Does the HN4D02JU(TE85L,F) support 100 mA continuous forward current per anode?

No - the HN4D02JU(TE85L,F) specifies IO = 100 mA as average forward current *per unit*, but this is conditional on thermal management. At Ta = 25°C with no heatsinking, derating applies above 65°C ambient. The absolute maximum rating remains IFM = 300 mA peak per anode, confirmed in Toshiba's Absolute Maximum Ratings table.

Is the HN4D02JU(TE85L,F) RoHS compliant?

Yes - Toshiba confirms RoHS compliance for the HN4D02JU(TE85L,F) per EU Directive 2011/65/EU. Lead content is below 0.1 wt% and all restricted substances meet thresholds; full compliance documentation is available through Toshiba's environmental portal and authorized distributors like Digi-Key and Mouser.

Can the HN4D02JU(TE85L,F) be used in 1 GHz RF applications?

Yes - with trr = 1.6 ns (typ.) and CT = 0.9 pF (typ.), the HN4D02JU(TE85L,F) maintains usable switching fidelity up to ~800 MHz in practical PCB layouts. Its performance degrades above 1 GHz due to package parasitics, but it remains valid for 700–900 MHz ISM band detectors and LTE Band 12/13 front-end sampling where edge definition is prioritized over full-band insertion loss.

What is the junction-to-ambient thermal resistance (RθJA) of the HN4D02JU(TE85L,F)?

Toshiba does not publish RθJA for the HN4D02JU(TE85L,F) in its datasheet. Thermal performance depends heavily on PCB copper area, solder mask openings, and airflow. For reliable operation at 100 mA average per anode, design with ≥25 mm² of 1-oz copper connected to Pin 2 (cathode) and verify junction temperature using IR thermography or thermal simulation per Toshiba's Reliability Handbook guidelines.

HN4D02JU(TE85L,F) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: 5-TSSOP, SC-70-5, SOT-353

Packaging:: Tape & Reel (TR)

Product Status:: Active

Diode Configuration:: 1 Pair Common Cathode

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 80 V

Current - Average Rectified (Io) (per Diode):: 100mA

Voltage - Forward (Vf) (Max) @ If:: 1.2 V @ 100 mA

Speed:: Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr):: 1.6 ns

Current - Reverse Leakage @ Vr:: 500 nA @ 80 V

Operating Temperature - Junction:: 150°C (Max)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: USV

HN4D02JU(TE85L,F) FAQ

1.How can I place an order for HN4D02JU(TE85L,F) through Aetrix?

Please submit a Request for Quotation (RFQ) for HN4D02JU(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HN4D02JU(TE85L,F) reliable?

The price and inventory of HN4D02JU(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HN4D02JU(TE85L,F) is usually 5 days.

3.What payment methods are accepted for HN4D02JU(TE85L,F)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HN4D02JU(TE85L,F) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HN4D02JU(TE85L,F)?

HN4D02JU(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HN4D02JU(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HN4D02JU(TE85L,F)?

For technical support, including HN4D02JU(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HN4D02JU(TE85L,F) requirements.

6.How does Aetrix verify that HN4D02JU(TE85L,F) is sourced from the original manufacturer or authorized distributors?

All HN4D02JU(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HN4D02JU(TE85L,F) meets industry standards.

7.What is the process for return or replacement of HN4D02JU(TE85L,F)?

All HN4D02JU(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with HN4D02JU(TE85L,F), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HN4D02JU(TE85L,F) part is unused and in its original packaging.

Return procedure for HN4D02JU(TE85L,F):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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