My Inquiry
My Account
Taiwan Semiconductor Corporation HS1DF-T
- Part No.:
- HS1DF-T
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- DO-221AC, SMA Flat Leads
- Datasheet:
-
HS1DF-T.pdf
- Description:
- 50NS, 1A, 200V, HIGH EFFICIENT R
- Quantity:
- Payment:
- Shipping:
Inventory:7,500
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HS1DF-T from Taiwan Semiconductor is a 1 A, 200 V repetitive peak reverse voltage (VRRM) surface-mount Schottky rectifier in SMAF package, featuring 0.86 V forward voltage at 1.0 A and 25°C, low 5 µA reverse leakage at 25°C, and 50 ns reverse recovery time - optimized for DC-DC converters and freewheeling paths in compact power supplies.
For engineers reviewing the HS1DF-T datasheet, HS1DF-T pinout, HS1DF-T application, or HS1DF-T equivalent, key selection criteria include its 200 V VRRM, 30 A surge rating (8.3 ms), 15 °C/W junction-to-lead thermal resistance, J-STD-020 Level 1 moisture sensitivity, and RoHS/halogen-free compliance for high-reliability industrial and consumer power designs.
Technical Context
The HS1DF-T is a single-die, glass-passivated silicon planar junction rectifier with cathode-band polarity marking. Its 200 V VRRM and 1 A average forward current rating target mid-voltage switching applications where low conduction loss and fast recovery are critical.
Thermal performance is defined for mounting on a 5 mm × 5 mm copper pad: RθJL = 15 °C/W and RθJA = 89 °C/W. Electrical behavior is specified across -55°C to +150°C junction temperature range, with reverse leakage rising to 125 µA at 125°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - maximum repetitive reverse blocking voltage; defines safe operating limit in flyback/freewheeling circuits |
| IF | 1 A - continuous average forward current; determines steady-state power dissipation capability |
| IFSM (8.3 ms) | 30 A - non-repetitive surge current; supports transient overload handling without failure |
| VF @ 1 A, 25°C | 0.86 V - forward conduction drop; directly impacts conduction loss and thermal design |
| trr | 50 ns - reverse recovery time; enables efficient operation in 100–500 kHz switching converters |
| RθJL | 15 °C/W - junction-to-lead thermal resistance; enables direct thermal path to PCB copper for passive cooling |
| Moisture Sensitivity | Level 1 per J-STD-020 - no bake requirement before reflow; compatible with standard SMT assembly |
Pinout & Package
Package: SMAF - surface-mount, molded plastic case with matte tin-plated leads, UL 94V-0 rated, 0.035 g weight, cathode indicated by band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry | Connected to lower-potential node (e.g., switch node in buck converter); requires adequate copper area for thermal dissipation |
| Cathode | Forward current exit / reverse blocking terminal | Marked by band; connects to output rail or ground return; must withstand full VRRM during off-state |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated chip junction | Enhances long-term reliability under humidity and thermal cycling; prevents surface degradation of PN junction |
| Low reverse leakage (5 µA @ 25°C) | Reduces standby power loss in high-impedance bias networks and energy-sensitive battery systems |
| J-STD-020 Level 1 moisture sensitivity | Eliminates pre-bake step in SMT line; reduces manufacturing cost and process complexity |
| RoHS and halogen-free compliance | Meets IEC 61249-2-21 and EU RoHS directives; supports green product certification and export requirements |
| Matte tin-plated leads | Ensures solderability per J-STD-002; compatible with lead-free and SnPb reflow profiles |
Applications
| DC-DC Converter | Switching Mode Inverter |
|---|---|
Use Scenario: Secondary-side rectification in isolated 12 V to 5 V/3.3 V flyback converters powering microcontrollers and sensors. IC Role / Device Role / Timing Role: Output rectifier diode conducting during transformer reset phase; handles 1 A average load with minimal voltage drop. Use Value: 0.86 V VF at 1 A reduces conduction loss by ~15% vs. comparable 1N4007, improving efficiency in space-constrained modules. | Use Scenario: Freewheeling path in half-bridge motor drive inverters for small appliances and fans. IC Role / Device Role / Timing Role: Clamping diode providing low-loss current recirculation during MOSFET dead-time; operates at up to 150°C junction temperature. Use Value: 50 ns trr minimizes reverse recovery charge, reducing switching losses and EMI generation during commutation. |
| Freewheeling Application | Industrial Power Supply |
Use Scenario: Inductive load suppression in relay drivers and solenoid control circuits in PLC I/O modules. IC Role / Device Role / Timing Role: Freewheeling diode absorbing back-EMF energy when inductive load is de-energized; rated for 30 A surge peaks. Use Value: 30 A IFSM (8.3 ms) safely clamps high-energy transients without thermal runaway or bond-wire fusing. | Use Scenario: Input rectification stage in compact AC-DC adapters for industrial instrumentation with wide ambient temperature range. IC Role / Device Role / Timing Role: Bridge leg diode in voltage-doubler or full-wave configuration; operates continuously from -40°C to +85°C ambient. Use Value: -55°C to +150°C TJ rating ensures stable operation under thermal stress, while 15 °C/W RθJL enables reliable heat transfer to PCB heatsink areas. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MBR120LSFT1G | 20 V VRRM, Schottky, 0.45 V VF @ 1 A - lower voltage, lower drop, but insufficient for 200 V blocking | Only suitable for ≤20 V output rails; not interchangeable in 200 V-rated circuits | Select only if system VRRM requirement is ≤20 V and ultra-low VF is prioritized |
| 1N4001G | 50 V VRRM, PN junction, 1.1 V VF @ 1 A, 30 µs trr - higher drop, slower, lower voltage rating | Not viable for 200 V reverse bias; unsuitable for >100 kHz switching due to slow recovery | Acceptable only in low-frequency, low-efficiency linear supplies where VRRM and speed are non-critical |
Compared with MBR120LSFT1G and 1N4001G, the HS1DF-T uniquely satisfies 200 V blocking with fast (50 ns) recovery and moderate forward drop (0.86 V), making it the only viable choice among the three for 200 V, medium-frequency switching rectification in space-constrained SMT designs.
Availability
HS1DF-T is available at Aetrix Electronics and suitable for DC-DC converters, switching mode inverters, and freewheeling applications requiring stable component supply, consistent parametric performance, and full traceability through tape-and-reel packaging (7,500 units per reel).
Supply support for HS1DF-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and protection ICs since 1979.
The HS1DF-T belongs to TSC's HS1x-F series of high-efficiency surface-mount rectifiers designed specifically for compact, high-frequency power conversion systems where thermal performance, reliability, and SMT manufacturability are critical.
FAQ
What is the maximum junction temperature rating for the HS1DF-T?
The HS1DF-T has a maximum junction temperature (TJ) rating of +150°C and a minimum of -55°C. This wide operating range allows deployment in industrial environments with elevated ambient temperatures. The device's thermal resistance values - RθJL = 15 °C/W and RθJA = 89 °C/W - are measured on a 5 mm × 5 mm copper pad, enabling accurate thermal modeling. Derating curves in the HS1DF-T datasheet confirm usable current capacity down to zero at 150°C junction temperature.
Does the HS1DF-T have a specified reverse recovery time, and how is it measured?
Yes, the HS1DF-T has a reverse recovery time (trr) of 50 ns maximum, measured under conditions of IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A. This parameter is critical for high-frequency switching applications such as DC-DC converters operating above 100 kHz. The 50 ns value reflects the device's ability to transition rapidly from conduction to blocking state, minimizing switching losses and associated EMI. Data is confirmed in the ELECTRICAL SPECIFICATIONS table on page 2 of the HS1DF-T datasheet.
What does the "-T" suffix indicate in HS1DF-T?
The "-T" suffix in HS1DF-T denotes tape-and-reel packaging - specifically, 7,500 units per reel - as defined in the ORDERING INFORMATION section. It does not indicate temperature grade or termination type. All variants in the HS1xF-T family (HS1DF-T through HS1MF-T) use this same packaging format. The base part number "HS1DF" identifies the 200 V version, while "x" in "HS1xF" maps to voltage rating (D = 200 V, G = 400 V, etc.). No alternate packaging formats (e.g., bulk or ammo pack) are specified for the HS1DF-T.
Is the HS1DF-T RoHS and halogen-free compliant?
Yes, the HS1DF-T is fully RoHS compliant and halogen-free per IEC 61249-2-21. This is explicitly stated in the FEATURES section and verified in the MATERIAL COMPLIANCE notes. The molding compound meets UL 94V-0 flammability rating, and terminals are matte tin plated per J-STD-002. These attributes ensure compatibility with global environmental regulations and enable use in consumer, industrial, and automotive-qualified end products where substance restrictions apply.
How is polarity marked on the HS1DF-T package?
Polarity on the HS1DF-T is indicated by a cathode band printed on the body of the SMAF package, consistent with industry-standard diode marking convention. The banded end is the cathode terminal, and the unmarked end is the anode. This marking is visible in the MARKING DIAGRAM on page 5 of the HS1DF-T datasheet and aligns with JEDEC MO-203-AB mechanical outline standards. Correct orientation is essential to prevent reverse-bias failure during circuit operation.
HS1DF-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- DO-221AC, SMA Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 200 V
- Capacitance @ Vr, F:
- 19pF @ 4V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SMAF
- Operating Temperature - Junction:
- -55°C ~ 150°C
HS1DF-T FAQ
1.How can I place an order for HS1DF-T through Aetrix?
Please submit a Request for Quotation (RFQ) for HS1DF-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HS1DF-T reliable?
The price and inventory of HS1DF-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HS1DF-T is usually 5 days.
3.What payment methods are accepted for HS1DF-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HS1DF-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HS1DF-T?
HS1DF-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HS1DF-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HS1DF-T?
For technical support, including HS1DF-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HS1DF-T requirements.
6.How does Aetrix verify that HS1DF-T is sourced from the original manufacturer or authorized distributors?
All HS1DF-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HS1DF-T meets industry standards.
7.What is the process for return or replacement of HS1DF-T?
All HS1DF-T units undergo pre-shipment inspection (PSI). If there is an issue with HS1DF-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HS1DF-T part is unused and in its original packaging.
Return procedure for HS1DF-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HS1DF-T Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
