Taiwan Semiconductor Corporation HS1J

Overview

HS1J from Taiwan Semiconductor is a 600 V repetitive peak reverse voltage, 1 A average forward current, surface-mount fast recovery rectifier in DO-214AC (SMA) package, featuring 75 ns reverse recovery time and 1.7 V forward voltage at 1 A, used in snubber networks and DC-DC converter freewheeling paths.

For engineers reviewing the HS1J datasheet, HS1J pinout, HS1J application, or HS1J equivalent, key selection criteria include its 600 V V_RRM, 30 A I_FSM, 15 °C/W junction-to-lead thermal resistance, and compatibility with automated placement on high-efficiency switching power supplies.

Technical Context

The HS1J is a single-die, glass-passivated silicon PN junction rectifier optimized for fast switching in high-frequency SMPS topologies. Its 75 ns reverse recovery time and low 15 pF junction capacitance minimize switching losses and EMI generation during turn-off transitions.

Designed for operation up to 150 °C junction temperature, the HS1J delivers stable performance under thermal stress with 15 °C/W R_θJL and 70 °C/W R_θJA on standard 5 mm × 5 mm copper pads - enabling reliable use in compact, convection-cooled industrial and lighting power stages.

Key Specifications

Pinout & Package

Package: DO-214AC (SMA), surface-mount, molded plastic case with cathode band marking; matte tin-plated leads compliant with J-STD-002 solderability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast recovery rectifier applications.

Compared with STTH1R06U and ES1J, the HS1J offers balanced performance in standard SMT form factor with proven reliability in industrial DC-DC and lighting applications - ideal where 75 ns recovery and 1.7 V drop meet system efficiency targets without requiring TO-220 heatsinking or sub-50 ns timing.

Availability

HS1J is available at Aetrix Electronics and suitable for DC-DC converters, snubber networks, and LED driver secondary rectification requiring stable component supply and consistent DO-214AC packaging.

Supply support for HS1J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and MOSFETs for industrial and consumer markets.

The HS1J belongs to TSC's HS1x family of high-efficiency surface-mount rectifiers designed specifically for high-frequency switching power supplies where fast recovery, thermal robustness, and automated assembly compatibility are critical.

FAQ

What is the maximum junction temperature rating for HS1J?

The HS1J has a maximum junction temperature (T_JMAX) of +150 °C, verified per absolute maximum ratings table in the official TSC datasheet Version M2401. This rating enables reliable operation in enclosed industrial power supplies where ambient temperatures exceed 85 °C. Derating curves confirm usable current capacity down to 0.5 A at 125 °C ambient on standard PCB copper pads. The HS1J must not be operated beyond this limit to avoid permanent parametric shift or failure.

Does HS1J have a halogen-free and RoHS-compliant construction?

Yes, the HS1J is explicitly stated as halogen-free and RoHS compliant in the official TSC documentation (Version M2401). Its molding compound meets UL 94V-0 flammability rating, and terminals are matte tin plated per J-STD-002. These attributes are confirmed in the FEATURES section and MECHANICAL DATA table. Compliance applies to the full HS1J device, including die, encapsulant, and lead finish - no exemptions or variants exist for this ordering code.

What is the reverse recovery time (t_rr) specification for HS1J?

The HS1J has a maximum reverse recovery time (t_rr) of 75 ns, measured at I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A per the ELECTRICAL SPECIFICATIONS table in Version M2401. This value is confirmed for the entire HS1J variant group (HS1J/HS1K/HS1M) and distinguishes it from lower-voltage variants like HS1G (50 ns). The 75 ns t_rr directly impacts switching loss in 100–500 kHz power stages.

Is HS1J suitable for use in snubber circuits?

Yes, the HS1J is explicitly listed in the APPLICATIONS section for snubber use. Its 600 V V_RRM, 30 A I_FSM, and fast 75 ns t_rr make it effective for clamping voltage spikes across MOSFETs in flyback and forward converters. The DO-214AC package allows direct placement near switching nodes, and its low leakage (<5 µA at 25 °C) prevents snubber capacitor discharge between cycles - ensuring consistent clamping performance in HS1J-based designs.

What is the forward voltage drop of HS1J at rated current?

The HS1J exhibits a maximum forward voltage (V_F) of 1.7 V at I_F = 1 A and T_J = 25 °C, as specified in the ELECTRICAL SPECIFICATIONS table for the HS1J/HS1K/HS1M group. This value increases with junction temperature - typical V_F rises to ~1.9 V at 125 °C. The 1.7 V drop determines conduction loss (1.7 W at full load), which must be accounted for in thermal design using the published R_θJL = 15 °C/W.