Taiwan Semiconductor Corporation HS1K R3G

Overview

HS1K R3G from Taiwan Semiconductor is a 800 V repetitive peak reverse voltage, 1 A average forward current, surface-mount silicon rectifier diode in DO-214AC (SMA) package, featuring 1.7 V max forward voltage at 1 A and 75 ns max reverse recovery time - used in snubber networks and freewheeling paths of DC-DC converters.

For engineers reviewing the HS1K R3G datasheet, HS1K R3G pinout, HS1K R3G application, or HS1K R3G equivalent, key selection criteria include V_RRM = 800 V, I_F = 1 A, t_rr = 75 ns, thermal resistance R_θJA = 70 °C/W, and RoHS/halogen-free compliance for industrial power conversion designs.

Technical Context

This high-efficiency rectifier employs a glass-passivated PN junction optimized for fast switching in high-frequency switching mode power supplies. Its 800 V V_RRM rating supports operation across 400–600 V DC bus applications, while the 75 ns t_rr enables reduced switching losses in flyback and forward converter topologies.

The DO-214AC (SMA) package provides robust thermal performance with R_θJL = 15 °C/W and meets UL 94V-0 flammability requirements. Polarity is marked by a cathode band, and terminals are matte tin-plated per J-STD-002 solderability standards.

Key Specifications

Pinout & Package

DO-214AC (SMA) surface-mount package with axial lead configuration: molded plastic body (UL 94V-0), cathode indicated by band, matte tin-plated leads, 0.060 g weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage rectifier applications.

Compared with STTH1R08 and ES1J, HS1K R3G offers optimal balance of 800 V ruggedness, 75 ns recovery, and cost-effective manufacturing - making it preferred for industrial DC-DC and lighting applications requiring proven reliability at elevated voltage stress.

Availability

HS1K R3G is available at Aetrix Electronics and suitable for DC-DC converters, snubber networks, and freewheeling circuits requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for HS1K R3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and consumer markets since 1979.

The HS1x series was designed specifically for high-efficiency, surface-mount rectification in space-constrained switching power supplies - emphasizing ruggedness, thermal stability, and automated assembly compatibility.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for HS1K R3G?

The HS1K R3G has a maximum repetitive peak reverse voltage (V_RRM) of 800 V, as confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version M2401). This rating defines the highest reverse voltage the device can block repeatedly without breakdown under normal operating conditions, and is critical for selecting appropriate voltage derating margins in DC-DC and inverter designs using HS1K R3G.

Does HS1K R3G meet RoHS and halogen-free requirements?

Yes, HS1K R3G is RoHS compliant and halogen-free, as explicitly stated in the FEATURES section of the Taiwan Semiconductor datasheet. These compliance attributes are verified per EU Directive 2011/65/EU and IEC 61249-2-21, ensuring suitability for environmentally regulated industrial and consumer electronics where restricted substance control is mandatory - a key requirement for HS1K R3G deployment in global supply chains.

What is the forward voltage (V_F) of HS1K R3G at 1 A and 25°C?

The forward voltage (V_F) of HS1K R3G is rated at a maximum of 1.7 V when conducting 1 A at 25°C junction temperature, per the ELECTRICAL SPECIFICATIONS table. This value directly determines conduction loss (P_cond ≈ I_F × V_F) and impacts thermal design - for example, HS1K R3G dissipates up to 1.7 W at full rated current, necessitating proper PCB copper area per the thermal performance notes.

What package type does HS1K R3G use, and what are its key mechanical features?

HS1K R3G uses the DO-214AC (SMA) surface-mount package, with mechanical features including UL 94V-0 rated molding compound, matte tin-plated leads compliant with J-STD-002, cathode polarity indicated by a visible band, and a weight of approximately 0.060 g. The package outline conforms to JEDEC DO-214AC standards, and its 5 mm × 5 mm copper pad mounting recommendation ensures reliable thermal performance for HS1K R3G in production PCB layouts.

What is the reverse recovery time (t_rr) specification for HS1K R3G?

The reverse recovery time (t_rr) for HS1K R3G is specified as a maximum of 75 ns under test conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A, as documented in the ELECTRICAL SPECIFICATIONS table. This parameter reflects the diode's speed in transitioning from conduction to blocking state, directly influencing switching loss and EMI behavior - a critical factor when using HS1K R3G in high-frequency DC-DC converters above 100 kHz.