Taiwan Semiconductor Corporation HS1M R3G

Overview

HS1M R3G from Taiwan Semiconductor is a 1 A, 1000 V repetitive peak reverse voltage (V_RRM) surface-mount fast recovery rectifier in DO-214AC (SMA) package, featuring 1.7 V forward voltage at 1 A and 75 ns reverse recovery time, used in snubber circuits and DC-DC converters requiring high-voltage blocking and efficient freewheeling.

For engineers reviewing the HS1M R3G datasheet, HS1M R3G pinout, HS1M R3G application, or HS1M R3G equivalent, key selection considerations include its 1000 V V_RRM, 30 A I_FSM, 150 °C maximum junction temperature, DO-214AC mechanical compatibility, and thermal resistance profile for PCB-mounted power conversion designs.

Technical Context

This device is a single-die, glass-passivated silicon PN junction rectifier optimized for fast switching in high-frequency power supplies. Its 75 ns reverse recovery time and 15 pF junction capacitance at 1 MHz/4 V support reduced switching losses in SMPS topologies operating up to several hundred kHz.

The DO-214AC (SMA) package provides JESD201 Class 2 whisker resistance, matte tin-plated leads compliant with J-STD-002, and UL 94V-0 molding compound - enabling reliable automated placement and reflow soldering in industrial and lighting applications.

Key Specifications

Pinout & Package

DO-214AC (SMA) package: molded plastic body with cathode band marking; matte tin-plated leads; 0.060 g mass; polarity indicated by visible cathode band on body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast recovery rectifier applications.

Compared with STTH1R06 and ES1J, HS1M R3G uniquely delivers 1000 V blocking capability in DO-214AC while maintaining acceptable 75 ns recovery and thermal performance - making it the only option among the three for 800–1000 V DC bus applications without package change or layout revision.

Availability

HS1M R3G is available at Aetrix Electronics and suitable for DC-DC converters, lighting ballasts, and industrial freewheeling applications requiring stable component supply, consistent parametric performance, and long-term manufacturability assurance.

Supply support for HS1M R3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and consumer markets since 1979.

The HS1x series was developed specifically for high-efficiency, surface-mount rectification in switching power supplies - emphasizing ruggedness, fast recovery, and automated assembly readiness across 50–1000 V ratings.

FAQ

What is the maximum junction temperature rating for HS1M R3G?

The HS1M R3G has a maximum junction temperature (T_J) of +150 °C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet. This rating allows reliable operation in high-ambient environments such as enclosed LED drivers or industrial control cabinets. Derating curves confirm usable current capacity down to 0.5 A at 125 °C ambient on standard PCB mounting. The HS1M R3G must not exceed this limit to maintain long-term reliability and parametric stability.

Does HS1M R3G have a specified moisture sensitivity level (MSL)?

Yes, HS1M R3G is rated MSL Level 1 per J-STD-020, meaning it can be stored indefinitely at ≤30 °C/85 % RH and placed directly into reflow without baking. This eliminates pre-conditioning steps in SMT lines and supports just-in-time manufacturing. The DO-214AC (SMA) package construction and moisture-resistant molding compound enable this classification. HS1M R3G's MSL Level 1 status is confirmed in the "Features" section of the Taiwan Semiconductor datasheet.

What is the forward voltage of HS1M R3G at 1 A and 100 °C junction temperature?

The forward voltage (V_F) of HS1M R3G is specified as 1.7 V maximum at I_F = 1 A and T_J = 25 °C. While the datasheet does not provide a tabulated V_F value at 100 °C, typical behavior shows ~10–15 % increase over 25 °C due to positive temperature coefficient of silicon diodes. Therefore, HS1M R3G V_F at 100 °C is estimated at ~1.85–1.95 V. For precise thermal design, engineers should reference the "Typical Forward Characteristics" curve (Fig. 4/8) in the HS1M R3G datasheet.

Is HS1M R3G RoHS and halogen-free compliant?

Yes, HS1M R3G meets RoHS Directive 2011/65/EU requirements and is halogen-free per Taiwan Semiconductor's material declarations. This compliance is explicitly stated in the "Features" section of the official datasheet and verified through standardized testing of bromine, chlorine, fluorine, iodine, and brominated flame retardants. HS1M R3G's halogen-free status supports compliance with IEC 61249-2-21 and facilitates end-product certification for EU, Japan, and North American markets.

What is the junction-to-lead thermal resistance (R_θJL) of HS1M R3G?

The junction-to-lead thermal resistance (R_θJL) of HS1M R3G is 15 °C/W, measured under standard test conditions with the device mounted on a 5 mm × 5 mm copper pad PCB. This parameter reflects heat transfer efficiency from die to solder joint and is critical for estimating local temperature rise in high-current pulse applications. R_θJL is lower than R_θJA (70 °C/W), confirming that proper PCB copper pour significantly improves thermal performance. HS1M R3G's R_θJL value is documented in the "Thermal Performance" table of the datasheet.