Taiwan Semiconductor Corporation HS3D

Overview

HS3D from Taiwan Semiconductor is a 200 V, 3 A surface-mount high-efficiency fast recovery rectifier diode in DO-214AB (SMC) package, featuring 50 ns reverse recovery time, 1.0 V forward voltage at 3 A, and 10 µA reverse leakage at 25°C - used in switching-mode power supplies for telecom and computing systems.

For engineers reviewing the HS3D datasheet, HS3D pinout, HS3D application, or HS3D equivalent, key selection criteria include peak repetitive reverse voltage (200 V), surge current rating (150 A), thermal resistance (60 °C/W), junction temperature range (–55 to +150 °C), and RoHS/halogen-free compliance for industrial-grade power conversion designs.

Technical Context

The HS3D is a single-die, glass-passivated silicon rectifier optimized for high-frequency switching applications. Its 50 ns trr and low VF enable efficient operation in SMPS flyback and forward converters where fast turn-off and conduction loss reduction are critical.

Designed for automated SMT placement, it meets J-STD-020 moisture sensitivity level 1 and JESD 201 Class 2 whisker resistance. The cathode-banded DO-214AB package supports high-power density layouts with 0.210 g mass and UL 94V-0 molding compound.

Key Specifications

Pinout & Package

Package: DO-214AB (SMC) - Surface-mount, molded plastic case with matte tin-plated leads; polarity indicated by cathode band; UL 94V-0 rated; 0.210 g typical weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with MUR320 and VS-3EWH02-F, the HS3D offers the lowest forward voltage in its voltage class while maintaining industry-standard DO-214AB packaging - making it optimal for cost-sensitive, thermally constrained telecom and computing power supplies where conduction loss is dominant.

Availability

HS3D is available at Aetrix Electronics and suitable for telecom adapters, server power supplies, industrial motor drives, and LED lighting systems requiring stable component supply and long-lifecycle support.

Supply support for HS3D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global industrial, computing, and consumer markets since 1979.

The HS3D belongs to TSC's HS3x high-efficiency rectifier family, engineered specifically for high-frequency switching power conversion - balancing low V_F, fast t_rr, and robust surge capability in surface-mount packages.

FAQ

What is the maximum junction temperature rating for HS3D?

The HS3D has a maximum junction temperature (T_J) rating of +150°C, with an operating range from –55°C to +150°C. This specification ensures reliable operation in high-temperature environments such as enclosed server PSUs or industrial motor drive enclosures. Derating curves in the HS3D datasheet define allowable forward current versus ambient temperature, and thermal design must maintain junction temperature below 150°C under worst-case load and airflow conditions. The HS3D's 60 °C/W R_θJA value is measured on standard JEDEC test boards and guides heatsink or copper pour sizing.

Is HS3D RoHS and halogen-free compliant?

Yes, the HS3D is fully RoHS compliant and halogen-free per IEC 61249-2-21. Taiwan Semiconductor confirms this compliance in the official HS3D datasheet (Version K2102), and the device carries no restricted substances above threshold limits. The molding compound is UL 94V-0 rated, and terminals are matte tin plated per J-STD-002 solderability standards. These certifications make HS3D suitable for export to EU, China, and other regulated markets, and support green product declarations required by major OEMs.

What is the reverse recovery time (t_rr) of HS3D and how is it tested?

The HS3D has a maximum reverse recovery time (t_rr) of 50 ns, measured under conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A, per the HS3D datasheet (Version K2102). This parameter reflects the diode's ability to transition from forward conduction to reverse blocking state - critical for minimizing switching losses and EMI in high-frequency converters. The test uses a standardized half-sine waveform with specified current levels and is validated across production lots. Engineers should use this t_rr value when designing snubbers or evaluating cross-conduction risks in synchronous rectifier circuits involving HS3D.

Does HS3D have moisture sensitivity level (MSL) restrictions for PCB assembly?

No, the HS3D is rated at Moisture Sensitivity Level (MSL) 1 per J-STD-020, meaning it can be stored indefinitely at ≤30°C/85% RH without baking prior to reflow soldering. This eliminates pre-bake steps, reduces handling risk, and simplifies SMT line integration. The DO-214AB package construction and glass passivation contribute to this robust MSL rating. For full assurance, refer to the "Mechanical Data" section of the HS3D datasheet (Version K2102), which explicitly states MSL = 1 - confirming suitability for high-volume, automated assembly of HS3D into telecom and computing hardware.

What is the marking code and polarity identification for HS3D?

The HS3D is marked with the code "HS3D" on the device body, along with date and factory codes per the marking diagram in the HS3D datasheet (Version K2102). Polarity is indicated by a distinct cathode band - a white or black stripe located near one end of the DO-214AB package. This band identifies the cathode terminal, which must be connected toward the higher-potential side of the circuit (e.g., output capacitor positive rail). The anode is the unmarked end. Correct orientation is essential to prevent reverse breakdown or circuit malfunction; misplacement will result in immediate open-circuit behavior under forward bias.