Taiwan Semiconductor Corporation HS3G

Overview

HS3G from Taiwan Semiconductor is a 400 V repetitive peak reverse voltage, 3 A average forward current, surface-mount Schottky-rectifier-grade silicon diode in DO-214AB (SMC) package, featuring 1.3 V max forward voltage at 3 A and 50 ns reverse recovery time - used in high-frequency freewheeling paths of telecom DC/DC converters.

For engineers reviewing the HS3G datasheet, HS3G pinout, HS3G application, or HS3G equivalent, key selection criteria include its 400 V V_RRM, 150 A I_FSM, 60 °C/W R_θJA, 80 pF junction capacitance at 4 V, and cathode-band polarity marking for unambiguous PCB orientation.

Technical Context

The HS3G is a single-die, glass-passivated, planar-junction silicon rectifier optimized for switching-mode power supplies operating up to several hundred kHz. Its 50 ns reverse recovery time and low 1.3 V forward drop at rated current reduce conduction and switching losses in flyback and forward converter freewheeling legs.

Thermally rated for 150 °C maximum junction temperature and packaged in UL 94V-0 compliant DO-214AB (SMC), the HS3G supports automated placement with matte tin-plated leads meeting J-STD-002 solderability and JESD 201 Class 2 whisker resistance requirements.

Key Specifications

Pinout & Package

Package: DO-214AB (SMC), molded epoxy case with matte tin-plated leads, cathode indicated by band on body, weight ≈0.210 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency rectifier applications.

Compared with STTH3L04 and MBR340, the HS3G uniquely balances 400 V blocking capability, 50 ns switching speed, and SMC surface-mount compatibility - making it optimal for high-density, mid-voltage telecom and server auxiliary power stages where both voltage margin and layout efficiency matter.

Availability

HS3G is available at Aetrix Electronics and suitable for telecom DC/DC converters, industrial motor drive clamping circuits, and server auxiliary power supplies requiring stable component supply and J-STD-020 Level 1 moisture handling.

Supply support for HS3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and MOSFETs for industrial and computing markets.

The HS3G belongs to TSC's HS3x high-efficiency rectifier family, designed specifically for high-frequency switching power conversion in telecom infrastructure, data center PSUs, and industrial automation equipment where thermal robustness and consistent surge tolerance are critical.

FAQ

What is the maximum repetitive peak reverse voltage rating for HS3G?

The HS3G has a maximum repetitive peak reverse voltage (V_RRM) of 400 V, as specified in the absolute maximum ratings table. This value is confirmed across all official Taiwan Semiconductor documentation versions K2102 and applies strictly to the HS3G variant - not extrapolated from adjacent part numbers. The 400 V rating ensures safe operation in 24–48 V system inputs with appropriate derating margins.

Does HS3G support automated pick-and-place assembly?

Yes, HS3G supports automated placement per its mechanical data: it uses a DO-214AB (SMC) package with matte tin-plated leads compliant with J-STD-002 solderability, and carries J-STD-020 moisture sensitivity level 1 - meaning no baking is required before reflow. The low-profile design and standardized tape-and-reel packaging (3,000 units per reel) are fully compatible with industry-standard SMT lines.

What is the forward voltage drop of HS3G at rated current?

The HS3G exhibits a maximum forward voltage drop (V_F) of 1.3 V at 3 A forward current and 25°C junction temperature, per the electrical specifications table. This value is measured under pulse conditions (PW = 0.3 ms) and represents worst-case conduction loss - actual V_F decreases at lower currents and increases slightly at elevated temperatures, remaining within specification up to 150°C.

How does the junction capacitance of HS3G affect high-frequency performance?

The HS3G has a typical junction capacitance (C_J) of 80 pF at 1 MHz and 4.0 V reverse bias. This value directly impacts switching node ringing and EMI generation in high-frequency converters: lower C_J reduces capacitive coupling during fast dv/dt transitions. At 400 V rating, HS3G's 80 pF strikes a balance between voltage capability and high-speed behavior - notably lower than 50 pF variants like HS3J, which trade voltage headroom for reduced capacitance.

Is HS3G suitable for use in automotive applications?

No, HS3G is not qualified for automotive applications. Taiwan Semiconductor explicitly states in its notice that "The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications." No AEC-Q101 stress test data, PPAP documentation, or automotive-grade qualification is provided for HS3G. It is intended for industrial, telecom, and computing power systems only.