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Renesas HSB123JTR-E
- Part No.:
- HSB123JTR-E
- Manufacturer:
- Renesas
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
HSB123JTR-E.pdf
- Description:
- DIODE FOR HIGH SPEED SWITCHING
- Quantity:
- Payment:
- Shipping:
Inventory:65,387
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Product details
Overview
HSB123JTR-E from Renesas is a silicon epitaxial planar high-speed switching diode in CMPAK package, featuring 85 V peak reverse voltage, 3.0 ns max reverse recovery time, and 2.0 pF capacitance at 1 MHz. It serves as a fast-switching rectifier in DC-DC converter output stages and ESD-protected signal path clamping circuits.
For engineers reviewing the HSB123JTR-E datasheet, HSB123JTR-E pinout, HSB123JTR-E application, or HSB123JTR-E equivalent, key selection criteria include trr ≤ 3.0 ns, VRM = 85 V, low C = 2.0 pF, dual-cathode configuration, and surface-mount CMPAK footprint compatibility with high-density PCB layouts.
Technical Context
This diode employs an epitaxial planar structure optimized for rapid carrier recombination, enabling sub-3 ns reverse recovery under IF = 10 mA / VR = 6 V / RL = 50 Ω test conditions. Its dual-cathode, single-anode pinout supports common-cathode dual-diode operation within one compact package.
The device operates with maximum junction temperature of 150°C and withstands non-repetitive surge current up to 4 A (1 μs pulse), making it suitable for transient-prone power rail protection and flyback snubbing where thermal robustness and speed are jointly critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak reverse voltage (VRM) | 85 V - Supports input rails up to 72 V DC with safety margin in industrial power supplies. |
| Reverse recovery time (trr) | 3.0 ns max - Enables >300 MHz switching in RF detector and high-frequency rectifier designs. |
| Capacitance (C) | 2.0 pF at 0 V, 1 MHz - Minimizes signal loading in 50 Ω high-speed data line clamping applications. |
| Forward voltage (VF) | 1.0 V at IF = 10 mA - Low conduction loss improves efficiency in low-current bias and sensing paths. |
| Junction temperature (Tj) | 150°C max - Allows operation in sealed enclosures or near heat-generating ICs without derating. |
| Average rectified current (IO) | 100 mA per device - Sufficient for auxiliary supply rectification and logic-level signal conditioning. |
Pinout & Package
CMPAK package: ultra-compact surface-mount plastic case (JEITA code PTSP0003ZB-A), dimensions 2.0 × 1.25 × 0.9 mm (nom), mass 0.006 g, compatible with standard SC-70 reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Common cathode terminal for dual-diode configuration; connects to reference/ground node in clamp or rectifier topology. |
| 2 | Anode | Input/anode node for both diodes; accepts transient or AC signal requiring bidirectional clamping or full-wave rectification. |
| 3 | Cathode | Second cathode terminal - electrically identical to Pin 1; enables independent cathode routing or split-ground layout. |
Key Features
| Feature | Design Value |
|---|---|
| Low junction capacitance | 2.0 pF enables minimal signal distortion in 100+ MHz RF detector and high-speed logic interface protection. |
| Ultra-fast recovery | 3.0 ns trr allows clean switching in PWM frequencies above 100 MHz without tail current artifacts. |
| Dual-cathode symmetry | Identical electrical characteristics on Pins 1 and 3 support balanced differential clamping or redundant cathode routing. |
| High-voltage ruggedness | 85 V VRM rating provides margin against 48 V and 60 V industrial bus transients per IEC 61000-4-5 Level 3. |
Applications
| DC-DC Converter Output Rectification | ESD-Safe Signal Line Clamping |
|---|---|
Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V flyback converters with 500 kHz switching frequency. IC Role / Device Role / Timing Role: Fast-recovery rectifier replacing Schottky diodes where lower leakage and higher VRM are required. Use Value: 3.0 ns trr reduces switching losses by >15% vs. 10 ns alternatives; 2.0 pF capacitance avoids resonance with transformer leakage inductance. | Use Scenario: Bidirectional ESD protection on USB 2.0 D+/D− lines exposed to ±8 kV contact discharge per IEC 61000-4-2. IC Role / Device Role / Timing Role: Dual-cathode clamp diode providing symmetrical forward conduction and low-capacitance reverse blocking. Use Value: 2.0 pF capacitance preserves signal integrity up to 480 Mbps; dual cathodes allow shared ground return without crosstalk. |
| High-Frequency Detector Circuits | Logic-Level Voltage Translation Clamp |
Use Scenario: RF envelope detection in 2.4 GHz ISM-band receiver front-ends using passive peak detector topology. IC Role / Device Role / Timing Role: High-speed signal sampling diode operating in small-signal nonlinear region with minimal stored charge. Use Value: 3.0 ns trr ensures accurate amplitude tracking of modulated carriers; low C avoids detuning LC tank elements. | Use Scenario: Level-shifting clamp between 5 V microcontroller GPIO and 3.3 V sensor interface with overvoltage fault containment. IC Role / Device Role / Timing Role: Input protection diode limiting voltage excursion to VF + 3.3 V while maintaining fast response. Use Value: 1.0 V VF at 10 mA ensures < 4.3 V clamping threshold; dual cathodes simplify PCB routing to separate ground domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RBS208M-13-F (Diodes Inc.) | trr = 4.0 ns, VRM = 80 V, C = 2.5 pF, SOD-523 package | Slightly slower recovery and higher capacitance; smaller footprint but lower VRM margin | Preferred when board space is constrained below 1.6 × 0.8 mm and 80 V rating suffices. |
| BAT54C-7-F (Diodes Inc.) | trr = 5.0 ns, VRM = 30 V, C = 10 pF, SOT-23 package | Lower voltage rating and significantly higher capacitance limit use to ≤ 50 MHz signal paths | Acceptable only in 3.3 V logic clamping where VRM ≥ 30 V and speed < 100 MHz is acceptable. |
Compared with RBS208M-13-F and BAT54C-7-F, the HSB123JTR-E delivers superior high-voltage resilience (85 V), lowest trr (3.0 ns), and lowest C (2.0 pF) in a thermally robust CMPAK package-making it optimal for 48–72 V industrial DC-DC and >200 MHz RF protection where speed, voltage, and layout density are jointly critical.
Availability
HSB123JTR-E is available at Aetrix Electronics and suitable for DC-DC converter rectification, high-speed signal clamping, RF detector circuits, and logic-level voltage translation requiring stable component supply across production lifecycles.
Supply support for HSB123JTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT systems.
The HSB123JTR-E belongs to Renesas' high-speed switching diode product line, engineered specifically for applications demanding nanosecond-scale recovery, low capacitance, and high-voltage tolerance in space-constrained surface-mount designs.
FAQ
What is the reverse recovery time specification for HSB123JTR-E?
The HSB123JTR-E has a maximum reverse recovery time (trr) of 3.0 ns, measured at IF = 10 mA, VR = 6 V, and RL = 50 Ω. This value is confirmed in the official Renesas datasheet REJ03G0546-0300 Rev.3.00. The ultra-fast trr makes HSB123JTR-E suitable for high-frequency rectification and RF detection where minimal switching delay is critical. Designers should verify layout parasitics do not degrade effective trr in final implementation.
Does HSB123JTR-E support dual-diode operation in a single package?
Yes, the HSB123JTR-E integrates two identical high-speed diodes sharing a common anode (Pin 2) and separate cathodes (Pins 1 and 3). This dual-cathode configuration enables independent grounding, differential clamping, or redundancy without external parallel devices. Each diode meets full specifications individually, including 85 V VRM and 3.0 ns trr, as verified in the Renesas datasheet.
What is the package type and footprint compatibility of HSB123JTR-E?
The HSB123JTR-E uses the CMPAK package (JEITA code PTSP0003ZB-A), a 3-pin ultra-small surface-mount outline measuring 2.0 × 1.25 × 0.9 mm (nominal). It is mechanically and thermally compatible with SC-70 reflow profiles and shares land pattern compatibility with other JEDEC-standard 3-pin ultra-miniature packages. The pinout (Cathode–Anode–Cathode) is fixed and non-rotatable per Renesas documentation.
What is the maximum average rectified current rating for HSB123JTR-E?
The HSB123JTR-E is rated for 100 mA average rectified current (IO) per diode at Ta = 25°C, with derating above ambient temperature. This rating assumes proper PCB copper area for thermal dissipation. The device also supports 300 mA peak forward current (IFM) and 4 A non-repetitive surge (IFSM), making it appropriate for pulsed-load applications like snubbers and transient clamps where average power remains low.
How does the capacitance of HSB123JTR-E affect high-frequency performance?
The HSB123JTR-E exhibits 2.0 pF junction capacitance at VR = 0 V and f = 1 MHz, enabling minimal signal loading in RF and high-speed digital interfaces. This low C value prevents resonance with trace inductance up to ~200 MHz and maintains impedance integrity on 50 Ω lines. At higher reverse bias (e.g., VR = 20 V), capacitance drops further-below 1.2 pF-as shown in Figure 3 of the Renesas datasheet-enhancing bandwidth in clamping configurations.
HSB123JTR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
HSB123JTR-E FAQ
1.How can I place an order for HSB123JTR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HSB123JTR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HSB123JTR-E reliable?
The price and inventory of HSB123JTR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HSB123JTR-E is usually 5 days.
3.What payment methods are accepted for HSB123JTR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HSB123JTR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HSB123JTR-E?
HSB123JTR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HSB123JTR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HSB123JTR-E?
For technical support, including HSB123JTR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HSB123JTR-E requirements.
6.How does Aetrix verify that HSB123JTR-E is sourced from the original manufacturer or authorized distributors?
All HSB123JTR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HSB123JTR-E meets industry standards.
7.What is the process for return or replacement of HSB123JTR-E?
All HSB123JTR-E units undergo pre-shipment inspection (PSI). If there is an issue with HSB123JTR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HSB123JTR-E part is unused and in its original packaging.
Return procedure for HSB123JTR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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