My Inquiry
My Account
Renesas HSB123TR-E
- Part No.:
- HSB123TR-E
- Manufacturer:
- Renesas
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
HSB123TR-E.pdf
- Description:
- DIODE FOR HIGH SPEED SWITCHING
- Quantity:
- Payment:
- Shipping:
Inventory:62,700
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HSB123TR-E from Renesas is a silicon epitaxial planar high-speed switching diode in CMPAK package, featuring 3.0 ns max reverse recovery time (trr), 80 V reverse voltage (VR), and 2.0 pF capacitance at 0 V. It supports dual-cathode configuration for compact layout in signal routing and RF detector applications.
For engineers reviewing the HSB123TR-E datasheet, HSB123TR-E pinout, HSB123TR-E application, or HSB123TR-E equivalent, key selection criteria include trr ≤ 3.0 ns, VR ≥ 80 V, low C ≤ 2.0 pF, dual-cathode topology, and SC-70-compatible CMPAK surface-mount footprint.
Technical Context
This device is a single-die, dual-cathode high-speed switching diode optimized for fast transient response and minimal charge storage. Its epitaxial planar structure enables low trr and stable IR < 0.1 μA at VR = 80 V.
The CMPAK package integrates two identical diode elements sharing one anode and separate cathodes (Pin 1 & Pin 3), enabling independent signal path control with common anode drive - ideal for RF sampling, logic-level clamping, and high-frequency demodulation circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Recovery Time (trr) | 3.0 ns max - enables operation up to ~100 MHz switching frequencies without tail current distortion |
| Reverse Voltage (VR) | 80 V - supports signal swing handling in 5 V–24 V logic interface and analog front-end protection |
| Capacitance (C) | 2.0 pF at VR = 0 V, f = 1 MHz - minimizes loading on RF nodes and preserves bandwidth in detector circuits |
| Forward Voltage (VF) | 1.0 V max at IF = 10 mA - ensures low conduction loss in low-current switching paths |
| Reverse Current (IR) | 0.1 μA max at VR = 80 V - maintains high isolation in off-state signal routing and sample-hold stages |
| Junction Temperature (Tj) | 150 °C - allows reliable operation in thermally constrained PCB layouts and industrial ambient conditions |
Pinout & Package
CMPAK package (JEITA code PTSP0003ZB-A, equivalent to SC-70 footprint) with 3-terminal surface-mount configuration and 0.006 g typical mass. Dimensions: D = 2.0 mm (max), E = 1.25 mm (nom), b = 0.3 mm (nom), c = 0.16 mm (nom).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode (Device 1) | Independent cathode node for first diode element; enables separate signal path termination |
| Pin 2 | Anode (Common) | Shared anode connection for both diode elements; simplifies drive circuitry and reduces component count |
| Pin 3 | Cathode (Device 2) | Independent cathode node for second diode element; supports differential or dual-path switching |
Key Features
| Feature | Design Value |
|---|---|
| Dual-cathode monolithic structure | Two matched diodes in one die with shared anode - eliminates tracking mismatch and saves board space vs. discrete pairs |
| Low trr with controlled charge storage | 3.0 ns max reverse recovery - reduces switching noise and improves timing fidelity in pulse shaping circuits |
| Low junction capacitance | 2.0 pF at 0 V - preserves high-frequency signal integrity in RF detector and mixer bias networks |
| High VR/IR ratio | 80 V / 0.1 μA - delivers robust off-state blocking for precision clamping and level-shifting applications |
Applications
| RF Signal Detector | Logic-Level Clamping |
|---|---|
Use Scenario: Demodulating AM signals in 10–100 MHz receiver front-ends using envelope detection. IC Role / Device Role / Timing Role: High-speed switching diode acting as peak detector with minimal capacitive loading and fast discharge. Use Value: 2.0 pF capacitance and 3.0 ns trr preserve signal rise time and reduce distortion in narrowband RF detection. | Use Scenario: Protecting microcontroller GPIO pins from overvoltage transients during level translation between 3.3 V and 5 V domains. IC Role / Device Role / Timing Role: Fast clamping diode shunting excess voltage to VCC or GND before damage threshold is reached. Use Value: 0.1 μA IR at 80 V ensures negligible leakage current during normal operation and rapid turn-on under fault. |
| Dual-Path Sample-and-Hold | High-Speed Logic Interface |
Use Scenario: Sampling two independent analog channels using synchronized hold capacitors with isolated discharge paths. IC Role / Device Role / Timing Role: Dual-cathode diode providing independent cathode control per channel while sharing common anode drive. Use Value: Matched trr and VF across both elements ensure consistent acquisition timing and minimal channel-to-channel skew. | Use Scenario: Isolating bidirectional data lines in high-speed digital interfaces subject to ESD and overshoot. IC Role / Device Role / Timing Role: Low-capacitance switching diode used in series with signal line to block reverse current and limit voltage excursion. Use Value: 80 V VR rating and 3.0 ns trr allow safe operation across LVDS, USB 2.0, and SPI clock/data lines without signal degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB520S-30T1G | Single-cathode SOD-523 package; trr = 4.0 ns; C = 3.0 pF at 0 V | Lacks dual-cathode topology; requires two devices for same functionality as HSB123TR-E | Select when board space permits discrete implementation and trr ≤ 4.0 ns is acceptable |
| NSR0230HT1G | Single-diode SOD-323; trr = 4.5 ns; VF = 0.55 V typ at 10 mA; C = 2.5 pF | No dual-cathode capability; lower VF but higher trr and capacitance than HSB123TR-E | Select for ultra-low VF priority in single-path clamping where trr > 3.0 ns is tolerable |
Compared with RB520S-30T1G and NSR0230HT1G, the HSB123TR-E uniquely delivers dual-cathode integration, 3.0 ns trr, and 2.0 pF capacitance in a single CMPAK package - reducing component count and improving timing alignment in multi-path RF and sampling systems.
Availability
HSB123TR-E is available at Aetrix Electronics and suitable for RF detector design, logic-level clamping, dual-path sample-and-hold circuits, and high-speed digital interface protection requiring stable component supply and consistent parametric performance.
Supply support for HSB123TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal solutions for automotive, industrial, and infrastructure markets.
The HSB123TR-E belongs to Renesas' high-speed switching diode product line, designed specifically for RF signal conditioning, precision clamping, and compact multi-path analog switching in space-constrained applications.
FAQ
What is the reverse recovery time specification for HSB123TR-E?
The HSB123TR-E has a maximum reverse recovery time (trr) of 3.0 ns under test conditions of IF = 10 mA, VR = 6 V, and RL = 50 Ω. This value is measured per device and reflects the diode's ability to rapidly transition from conduction to blocking state - critical for high-frequency switching applications. The HSB123TR-E achieves this performance through its silicon epitaxial planar construction and optimized doping profile.
Does HSB123TR-E support dual independent cathode connections?
Yes, the HSB123TR-E features a dual-cathode monolithic structure with Pin 1 and Pin 3 serving as separate cathodes and Pin 2 as the common anode. This configuration enables two independent signal paths sharing one drive node - useful in differential detection, dual-channel sampling, or redundant clamping. The internal matching between the two diodes ensures consistent trr and VF characteristics across both elements.
What package type is used for HSB123TR-E and is it compatible with standard pick-and-place equipment?
The HSB123TR-E uses the CMPAK package (JEITA code PTSP0003ZB-A), which is dimensionally compatible with SC-70 footprints. Its standardized 3-pin surface-mount outline, 0.3 mm nominal lead width, and 2.0 mm × 1.25 mm body size ensure compatibility with industry-standard automated assembly processes including vision-guided placement and reflow soldering. The taping format (TR, 3,000 pcs/reel) further supports high-volume manufacturing.
What is the maximum reverse voltage rating for HSB123TR-E and how is it defined?
The HSB123TR-E has a DC reverse voltage (VR) rating of 80 V and a non-repetitive peak reverse voltage (VRM) of 85 V. These ratings are specified at Ta = 25°C and apply per individual diode element within the dual-cathode structure. The 80 V VR rating defines the maximum continuous reverse-bias voltage the device can withstand without significant leakage current - verified by IR ≤ 0.1 μA at VR = 80 V.
How does the capacitance of HSB123TR-E affect high-frequency circuit performance?
The HSB123TR-E exhibits 2.0 pF typical junction capacitance at VR = 0 V and f = 1 MHz, measured per diode element. This low capacitance minimizes signal attenuation and phase shift in RF paths, making it suitable for detectors, mixers, and antenna switch bias networks operating up to 100 MHz. Capacitance decreases with increasing reverse bias - dropping to ~0.5 pF at VR = 20 V - enabling dynamic tuning of impedance in variable-bias applications.
HSB123TR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
HSB123TR-E FAQ
1.How can I place an order for HSB123TR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HSB123TR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HSB123TR-E reliable?
The price and inventory of HSB123TR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HSB123TR-E is usually 5 days.
3.What payment methods are accepted for HSB123TR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HSB123TR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HSB123TR-E?
HSB123TR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HSB123TR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HSB123TR-E?
For technical support, including HSB123TR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HSB123TR-E requirements.
6.How does Aetrix verify that HSB123TR-E is sourced from the original manufacturer or authorized distributors?
All HSB123TR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HSB123TR-E meets industry standards.
7.What is the process for return or replacement of HSB123TR-E?
All HSB123TR-E units undergo pre-shipment inspection (PSI). If there is an issue with HSB123TR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HSB123TR-E part is unused and in its original packaging.
Return procedure for HSB123TR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HSB123TR-E Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
