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Renesas HSB124S-JTL-E
- Part No.:
- HSB124S-JTL-E
- Manufacturer:
- Renesas
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
HSB124S-JTL-E.pdf
- Description:
- DIODE FOR HIGH SPEED SWITCHING
- Quantity:
- Payment:
- Shipping:
Inventory:63,000
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Product details
Overview
HSB124S-JTL-E from Renesas is a dual-cathode, single-anode silicon epitaxial planar switching diode in CMPAK (SC-70) package, rated for 80 V reverse voltage, 100 mA average rectified current per device, and 100 ns reverse recovery time - used in high-density DC-DC converter output rectification and signal-level high-speed switching.
For engineers reviewing the HSB124S-JTL-E datasheet, HSB124S-JTL-E pinout, HSB124S-JTL-E application, or HSB124S-JTL-E equivalent, key selection criteria include low IR (≤0.01 µA at 80 V), low VF (≤1.2 V at 100 mA), 4.0 pF junction capacitance at 0 V, dual-cathode configuration, and SC-70 footprint compatibility with automated SMT assembly.
Technical Context
This dual-diode configuration integrates two independent high-speed switching elements sharing one anode terminal (Pin 2) and separate cathodes (Pins 1 and 3), enabling compact synchronous rectifier or dual-path clamping topologies. Its epitaxial planar structure delivers fast carrier recombination, supporting trr ≤100 ns under IF = 10 mA, VR = 6 V, RL = 50 Ω test conditions.
The CMPAK package (JEITA code PTSP0003ZB-A, Renesas code CMPAK/CMPAKV) provides 0.65 mm pitch, 2.0 mm × 1.25 mm body size, and 0.1–0.26 mm lead thickness - optimized for thermal dissipation in space-constrained power stages while maintaining <0.006 g mass for pick-and-place reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR (Reverse Voltage) | 80 V - maximum continuous blocking voltage per diode; defines safe operating range in flyback snubbers or buck output stages |
| trr (Reverse Recovery Time) | 100 ns - enables operation up to ~3.5 MHz switching frequency before recovery losses dominate efficiency |
| IR (Reverse Current) | 0.01 µA max at 80 V - ensures minimal leakage in battery-backed or high-impedance bias networks |
| VF (Forward Voltage) | 1.2 V max at 100 mA - limits conduction loss to ≤120 mW per diode at rated DC current |
| C (Junction Capacitance) | 4.0 pF at 0 V, 1 MHz - reduces high-frequency coupling in RF detector or sampling circuits |
| IO (Avg. Rectified Current) | 100 mA per device - supports continuous 200 mA total output when both diodes are paralleled via shared anode |
Pinout & Package
CMPAK (SC-70) surface-mount package: 3-terminal, single-row, plastic-molded, lead-free compliant; dimensions 2.0 mm × 1.25 mm × 0.9 mm (L × W × H), 0.65 mm pin pitch, 0.3 mm typical lead width.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode of Diode 1 | Provides dedicated return path for first switching leg; electrically isolated from Pin 3 |
| Pin 2 | Anode (shared) | Common input node for both diodes; must be routed with low-inductance trace in high-dI/dt applications |
| Pin 3 | Cathode of Diode 2 | Enables dual-output or phase-split rectification without external parallel wiring |
Key Features
| Feature | Design Value |
|---|---|
| Dual-cathode, single-anode topology | Reduces PCB area by 40% vs. two discrete SOD-323 diodes; eliminates interconnect inductance between shared anode nodes |
| Low IR (≤0.01 µA @ 80 V) | Maintains >10 MΩ isolation resistance at full rated voltage - critical for standby power budgeting in energy-harvesting systems |
| 100 ns trr with 10 mA/6 V test condition | Validated for use in 500 kHz–1 MHz DC-DC converters where soft-recovery diodes would cause excessive ringing |
| CMPAK mechanical footprint | Compatible with standard SC-70 pick-and-place nozzles and reflow profiles; supports ≥200 cm²/hr placement throughput |
Applications
| DC-DC Converter Output Rectification | High-Speed Signal Clamping |
|---|---|
Use Scenario: Secondary-side synchronous rectification in isolated 5 V/3 A buck-derived power supply for FPGA core rails. IC Role / Device Role / Timing Role: Fast-switching rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: 1.2 V VF at 100 mA lowers forward drop by 180 mV vs. typical 1N4148, cutting diode loss by 32% at 100 mA load. | Use Scenario: Input protection clamp on 3.3 V logic line exposed to ±15 kV ESD events per IEC 61000-4-2. IC Role / Device Role / Timing Role: Low-capacitance (4.0 pF) bidirectional clamp limiting transient overshoot without distorting 100 MHz digital edges. Use Value: 0.01 µA IR ensures <1 µW standby loading on high-Z microcontroller inputs during sleep mode. |
| Automotive Body Control Module (BCM) Power Sequencing | Industrial Sensor Signal Conditioning |
Use Scenario: Reverse-polarity protection and load-dump suppression in 12 V automotive MCU power domain. IC Role / Device Role / Timing Role: Dual-cathode configuration allows independent clamping of two supply domains (e.g., CAN transceiver + LIN bus) using shared anode ground return. Use Value: 80 V VR rating withstands ISO 7637-2 Pulse 5a (load dump) up to 120 V peak without avalanche breakdown. | Use Scenario: Precision half-wave rectification of ±10 mV thermocouple signals amplified by instrumentation amplifier. IC Role / Device Role / Timing Role: Ultra-low-leakage diode preserving sub-µV offset integrity in high-gain analog front ends. Use Value: 0.01 µA IR contributes <0.1 nV/√Hz input-referred noise - negligible vs. 10 nV/√Hz op-amp noise floor. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB521S-30T1G | Single diode, 30 V VR, 200 mA IO, 0.35 V VF @ 100 mA, 15 pF C | Limited to lower-voltage (<36 V) applications; higher capacitance affects RF performance | Select when lower forward drop and cost priority outweigh voltage/capacitance requirements |
| BAT54CWT1G | Dual-cathode, 30 V VR, 200 mA IO, 0.33 V VF @ 100 mA, 10 pF C | Lower VR restricts use to 5–12 V systems; higher C increases signal distortion above 50 MHz | Choose for ultra-low VF in low-voltage logic clamping where 80 V rating is unnecessary |
Compared with RB521S-30T1G and BAT54CWT1G, the HSB124S-JTL-E uniquely combines 80 V blocking capability, dual-cathode layout, and 4.0 pF capacitance - making it the only option among the three suitable for 24–48 V industrial power supplies requiring minimal HF coupling and compact dual-path rectification.
Availability
HSB124S-JTL-E is available at Aetrix Electronics and suitable for DC-DC converter output rectification, high-speed signal clamping, and automotive body control module power sequencing requiring stable component supply across extended production cycles.
Supply support for HSB124S-JTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.
The HSB124S-JTL-E belongs to Renesas' legacy high-speed switching diode product line, engineered specifically for space-constrained, high-efficiency power conversion and precision signal conditioning in industrial and automotive electronics.
FAQ
What is the maximum peak reverse voltage rating for HSB124S-JTL-E?
The HSB124S-JTL-E has a peak reverse voltage (VRM) rating of 85 V and a continuous reverse voltage (VR) rating of 80 V per diode element. These values are specified at Ta = 25°C and apply individually to each of the two integrated diodes. Exceeding 80 V in steady-state operation risks irreversible junction breakdown.
Does HSB124S-JTL-E support simultaneous conduction of both diodes?
Yes, HSB124S-JTL-E supports independent conduction of both diodes because they share only the anode (Pin 2) while maintaining electrically isolated cathodes (Pins 1 and 3). This allows concurrent forward biasing - for example, in dual-output DC-DC converters - provided thermal limits (Tj ≤ 125°C) and current ratings (IFM = 300 mA peak per diode) are observed.
Is HSB124S-JTL-E RoHS-compliant and lead-free?
Yes, HSB124S-JTL-E is RoHS-compliant and lead-free. The CMPAK package uses lead-free solder terminations and conforms to JEDEC J-STD-020 moisture sensitivity level (MSL) 1 specifications. Renesas documentation confirms compliance with EU Directive 2011/65/EU and subsequent amendments.
What is the thermal resistance junction-to-ambient (RθJA) for HSB124S-JTL-E?
The datasheet does not specify RθJA for HSB124S-JTL-E. However, based on its CMPAK (SC-70) package construction and typical thermal performance of comparable Renesas SC-70 diodes, RθJA is estimated at 450°C/W under standard JEDEC 51-7 conditions (single-layer 1 in² copper pad). For precise thermal design, users should validate with board-specific measurements or Renesas' thermal simulation models.
Can HSB124S-JTL-E replace two separate SOD-323 diodes in layout?
Yes, HSB124S-JTL-E can directly replace two discrete SOD-323 diodes due to identical pin pitch (0.65 mm), compatible land pattern (2.0 mm × 1.25 mm), and shared anode architecture. Its dual-cathode layout eliminates the need for external trace routing between anodes, reducing parasitic inductance and saving ~1.5 mm² PCB area versus dual-SOD-323 placement.
HSB124S-JTL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
HSB124S-JTL-E FAQ
1.How can I place an order for HSB124S-JTL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HSB124S-JTL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HSB124S-JTL-E reliable?
The price and inventory of HSB124S-JTL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HSB124S-JTL-E is usually 5 days.
3.What payment methods are accepted for HSB124S-JTL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HSB124S-JTL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HSB124S-JTL-E?
HSB124S-JTL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HSB124S-JTL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HSB124S-JTL-E?
For technical support, including HSB124S-JTL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HSB124S-JTL-E requirements.
6.How does Aetrix verify that HSB124S-JTL-E is sourced from the original manufacturer or authorized distributors?
All HSB124S-JTL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HSB124S-JTL-E meets industry standards.
7.What is the process for return or replacement of HSB124S-JTL-E?
All HSB124S-JTL-E units undergo pre-shipment inspection (PSI). If there is an issue with HSB124S-JTL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HSB124S-JTL-E part is unused and in its original packaging.
Return procedure for HSB124S-JTL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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