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Renesas HSB2838JTL-E

Part No.:
HSB2838JTL-E
Manufacturer:
Renesas
Category:
Single Diodes
Package:
-
Datasheet:
AetrixHSB2838JTL-E.pdf
Description:
PLANAR DIODE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,000

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Product details

Overview

HSB2838JTL-E from Hitachi (now Renesas Electronics) is a dual-anode, single-cathode silicon epitaxial planar diode optimized for high-speed switching in compact DC-DC converter outputs and signal clamping circuits, with 85 V peak reverse voltage, 3.0 ns reverse recovery time, and 100 mA average rectified current per diode.

For engineers reviewing the HSB2838JTL-E datasheet, HSB2838JTL-E pinout, HSB2838JTL-E application, or HSB2838JTL-E equivalent, key selection criteria include dual-anode configuration for shared cathode topology, CMPAK surface-mount package compatibility with high-density PCB layouts, and sub-4 ns trr performance under 10 mA/6 V test conditions.

Technical Context

This dual-diode device integrates two independent high-speed switching elements sharing a common cathode terminal, enabling synchronous rectification or dual-path clamping in space-constrained power stages. Its epitaxial planar construction delivers low junction capacitance (2.0 pF at 0 V) and tightly controlled forward voltage (≤1.2 V at 100 mA).

The CMPAK package supports automated high-speed assembly and thermal dissipation up to 125°C junction temperature. Electrical ratings are specified per device, with absolute maximums including 4 A non-repetitive surge current and −55°C to +125°C storage range.

Key Specifications

ParameterValue and Actual Design Meaning
Peak reverse voltage85 V - defines maximum transient voltage the diode can block without breakdown in flyback or boost topologies
Reverse recovery time3.0 ns - enables operation above 100 MHz switching frequencies with minimal switching loss
Forward voltage≤1.2 V at 100 mA - limits conduction loss in low-voltage, high-current output rectification
Junction capacitance2.0 pF at 0 V - reduces high-frequency signal distortion in RF detector or sampling applications
Average rectified current100 mA per diode - supports continuous current handling in dual-output or redundant path designs
PackageCMPAK - 3-pin surface-mount package with 2.0 mm × 1.25 mm footprint and 0.006 g mass for ultra-compact placement

Pinout & Package

CMPAK is a leadless, molded surface-mount package measuring 2.0 mm × 1.25 mm × 0.3 mm, optimized for reflow soldering and high-density PCB layouts.

Pin/TerminalCircuit RoleDesign Meaning
1AnodeFirst diode anode - connects to input or switching node in dual-anode clamping configuration
2AnodeSecond diode anode - enables independent control of two paths sharing common cathode
3CathodeCommon cathode - ties both diodes to ground or return path, simplifying layout in synchronous rectifiers

Key Features

FeatureDesign Value
Dual-anode monolithic structureEnables matched thermal and electrical characteristics between two diodes for balanced current sharing
Sub-4 ns reverse recoveryMinimizes dead-time losses and EMI generation in high-frequency SMPS designs
Low 2.0 pF junction capacitancePreserves signal integrity in high-speed data line protection and RF envelope detection
CMPAK surface-mount packageReduces board area by >50% versus SOT-23 while maintaining thermal reliability at 125°C TJ

Applications

DC-DC Converter Output RectificationHigh-Speed Signal Clamping

Use Scenario: Secondary-side rectification in 1–5 W isolated flyback converters powering USB-C PD accessories.

IC Role / Device Role / Timing Role: Dual-anode configuration allows shared cathode connection to ground plane, reducing trace inductance and improving efficiency at 500 kHz–1 MHz switching.

Use Value: 3.0 ns trr and ≤1.2 V VF cut conduction and switching losses by 18% versus standard Schottky diodes in 5 V/2 A output stages.

Use Scenario: Input protection for high-speed ADC front-ends operating at 100 MSPS in industrial data acquisition systems.

IC Role / Device Role / Timing Role: Fast clamping diode pair limits transient overvoltage to ±0.7 V while preserving bandwidth via 2.0 pF Cj.

Use Value: Sub-4 ns response ensures clamping occurs before first sample clock edge, preventing ADC saturation during ESD events.

Redundant Power Path SwitchingRF Detector Diode Pair

Use Scenario: OR-ing function in dual-input 3.3 V backup power supplies for telecom line cards with hot-swap capability.

IC Role / Device Role / Timing Role: Two matched diodes in single CMPAK package provide identical forward drop and thermal tracking across inputs.

Use Value: Matched VF and trr minimize circulating current and enable seamless switchover within 100 ns of primary failure.

Use Scenario: Precision RF power detection in 900 MHz ISM-band transceivers using envelope demodulation.

IC Role / Device Role / Timing Role: Dual-diode configuration supports balanced detector topologies requiring matched junction characteristics.

Use Value: 2.0 pF capacitance and <0.1 µA IR at 80 V ensure linear detection response up to −10 dBm with <0.2 dB error.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
RB520S-30T1GSingle diode, 30 V VR, 0.35 V VF at 10 mA, SOD-523 packageLacks dual-anode topology; lower voltage rating restricts use to ≤3.3 V logic-level clampingSelect when only one diode is needed and board space permits separate placement
BAT54CDual-common-cathode Schottky, 30 V VR, 0.24 V VF at 10 mA, SOT-23 packageSchottky architecture eliminates reverse recovery but increases leakage (1 µA vs. 0.1 µA) and limits VR to 30 VPrefer for low-VF, low-noise analog clamping where VR ≤30 V and trr is not critical

Compared with RB520S-30T1G and BAT54C, the HSB2838JTL-E uniquely combines dual-anode topology, 85 V blocking, and 3.0 ns trr in a 2.0 mm × 1.25 mm footprint-making it irreplaceable for high-voltage, high-frequency, space-constrained dual-path switching where matched characteristics are essential.

Availability

HSB2838JTL-E is available at Aetrix Electronics and suitable for DC-DC converter output rectification, high-speed signal clamping, and redundant power path switching requiring stable component supply and long-term industrial lifecycle support.

Supply support for HSB2838JTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Hitachi Semiconductor (now part of Renesas Electronics) was a Japanese semiconductor manufacturer specializing in power devices, analog ICs, and discrete components before its integration into Renesas in 2003.

The HSB2838JTL-E belongs to Hitachi's high-speed switching diode product line, designed specifically for compact, high-frequency power conversion and precision signal conditioning in industrial and communications equipment.

FAQ

What is the pin configuration of the HSB2838JTL-E?

The HSB2838JTL-E uses a 3-pin CMPAK package with Pin 1 = Anode 1, Pin 2 = Anode 2, and Pin 3 = Common Cathode, as confirmed in the original Hitachi ADE-208-486A datasheet Rev.1. This dual-anode arrangement enables shared-cathode circuit topologies without external wiring, and the top-view pinout is standardized across all HSB2838JTL-E units.

Does the HSB2838JTL-E support high-frequency switching above 100 MHz?

Yes, the HSB2838JTL-E supports high-frequency switching above 100 MHz due to its 3.0 ns reverse recovery time and 2.0 pF junction capacitance, both measured under standard conditions (IF = 10 mA, VR = 6 V, RL = 50 Ω). These parameters allow clean turn-off behavior in RF detector and fast-switching SMPS applications where timing fidelity is critical.

What is the maximum average current rating for each diode in the HSB2838JTL-E?

Each diode in the HSB2838JTL-E is rated for 100 mA average rectified current at Ta = 25°C, as specified in the Absolute Maximum Ratings table. The "*1" footnote clarifies this value applies to the total of two devices, meaning 100 mA per diode. Derating is required above 25°C ambient per the thermal resistance curve in the datasheet.

Is the HSB2838JTL-E RoHS compliant?

The HSB2838JTL-E was manufactured prior to RoHS enforcement and does not carry formal RoHS certification. However, its CMPAK package contains no lead in solderable terminations per Hitachi's 2002 material declaration, and modern equivalents from Renesas maintain lead-free compliance. For new designs, verify current RoHS status via Renesas' official part search tool using the active replacement part number.

Can the HSB2838JTL-E replace standard Schottky diodes in low-voltage clamping?

The HSB2838JTL-E can replace standard Schottky diodes in low-voltage clamping only when reverse recovery speed and voltage rating are prioritized over forward voltage. With VF ≤1.2 V at 100 mA and VR = 80 V, it trades higher VF than Schottkys (e.g., BAT54C's 0.24 V) for superior trr (3.0 ns vs. ~10 ns) and higher blocking capability-making it optimal for 5–12 V systems where switching noise matters more than conduction loss.

HSB2838JTL-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Technology:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-

HSB2838JTL-E FAQ

1.How can I place an order for HSB2838JTL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HSB2838JTL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HSB2838JTL-E reliable?

The price and inventory of HSB2838JTL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HSB2838JTL-E is usually 5 days.

3.What payment methods are accepted for HSB2838JTL-E?

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4.How is shipping managed for HSB2838JTL-E?

HSB2838JTL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HSB2838JTL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HSB2838JTL-E?

For technical support, including HSB2838JTL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HSB2838JTL-E requirements.

6.How does Aetrix verify that HSB2838JTL-E is sourced from the original manufacturer or authorized distributors?

All HSB2838JTL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HSB2838JTL-E meets industry standards.

7.What is the process for return or replacement of HSB2838JTL-E?

All HSB2838JTL-E units undergo pre-shipment inspection (PSI). If there is an issue with HSB2838JTL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HSB2838JTL-E part is unused and in its original packaging.

Return procedure for HSB2838JTL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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