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Renesas HSB83TR-E
- Part No.:
- HSB83TR-E
- Manufacturer:
- Renesas
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
HSB83TR-E.pdf
- Description:
- DIODE FOR HIGH VOLTAGE SWITCHING
- Quantity:
- Payment:
- Shipping:
Inventory:75,000
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Product details
Overview
HSB83TR-E from Renesas Electronics (formerly Hitachi) is a silicon epitaxial planar switching diode in CMPAK (SC-70) package, rated for 250 V reverse voltage, 300 mA peak forward current, and 100 ns reverse recovery time-designed for high-voltage, high-speed rectification in compact DC-DC converters.
For engineers reviewing the HSB83TR-E datasheet, HSB83TR-E pinout, HSB83TR-E application, or HSB83TR-E equivalent, key selection criteria include verified VR = 250 V rating, trr ≤ 100 ns performance under IF = IR = 30 mA conditions, low C = 3.0 pF at 0 V bias, and SC-70 footprint compatibility with automated SMT assembly.
Technical Context
This diode employs an epitaxial planar structure to achieve stable high-voltage blocking and fast minority-carrier recombination. Its junction temperature limit of 125°C and storage range of –55°C to +125°C support operation in industrial power supplies and automotive auxiliary circuits.
Electrical behavior is characterized by low forward voltage drop (VF ≤ 1.2 V at IF = 100 mA), ultra-low leakage (IR ≤ 0.2 µA at VR = 250 V), and tight capacitance control (C ≤ 3.0 pF at f = 1 MHz, VR = 0 V), enabling predictable high-frequency switching performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 250 V - Maximum continuous DC reverse bias before breakdown; defines usable voltage headroom in flyback snubbers and clamp circuits. |
| Peak Reverse Voltage (VRM) | 300 V - Non-repetitive surge withstand capability; supports transient overvoltage margin during startup or fault events. |
| Reverse Recovery Time (trr) | 100 ns - Measured at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω; enables efficient operation up to ~3 MHz switching frequencies. |
| Capacitance (C) | 3.0 pF at VR = 0 V, f = 1 MHz - Low junction capacitance minimizes switching losses and EMI in high-dV/dt applications. |
| Forward Voltage (VF) | ≤ 1.2 V at IF = 100 mA - Directly impacts conduction loss and thermal rise in high-duty-cycle rectifiers. |
| Reverse Current (IR) | ≤ 0.2 µA at VR = 250 V - Ensures minimal standby power loss in always-on power rails and battery-backed systems. |
Pinout & Package
CMPAK (JEDEC SC-70) surface-mount package: 3-terminal, 2.1 mm × 1.3 mm × 0.9 mm body, 0.65 mm lead pitch, 0.006 g weight. Optimized for high-density PCB layout and reflow-compatible assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | No-connect (NC) | Internally unconnected terminal; must remain floating-no routing or soldering required. |
| 2 | Anode | Forward current entry point; connects to higher-potential node (e.g., switch drain or transformer secondary). |
| 3 | Cathode | Forward current exit point; ties to output capacitor ground or return path in buck/flyback topologies. |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage blocking | VR = 250 V ensures reliable operation in 24–48 V industrial bus clamping and 100 VAC-derived SMPS inputs. |
| Fast recovery speed | trr = 100 ns reduces switching loss and ringing in 500 kHz–1 MHz DC-DC converters. |
| Low junction capacitance | C = 3.0 pF limits displacement current and improves EMI profile in high-dV/dt gate-drive or snubber paths. |
| SC-70 footprint | CMPAK package enables 40% smaller board area vs. SOT-23 while maintaining full thermal and electrical specs. |
Applications
| Switch-Mode Power Supply Clamp Diode | Flyback Converter Output Rectifier |
|---|---|
Use Scenario: Used across MOSFET drain and primary winding in quasi-resonant flyback converters to clamp voltage spikes during switch-off. IC Role / Device Role / Timing Role: Passive voltage clamp diode absorbing inductive energy; operates only during brief off-state transitions. Use Value: VRM = 300 V provides 20% margin above 240 VAC-derived peak input, preventing avalanche failure during line surges. | Use Scenario: Rectifies isolated secondary output in 5–24 V, 1–3 W flyback adapters for IoT sensors and smart meters. IC Role / Device Role / Timing Role: Unidirectional current valve converting AC secondary waveform to regulated DC output. Use Value: trr = 100 ns and VF ≤ 1.2 V jointly reduce conduction + switching loss, improving efficiency by ≥1.2% at 1 MHz operation. |
| DC-DC Buck Converter Freewheeling Diode | Automotive Body Control Module Snubber |
Use Scenario: Provides freewheeling path for inductor current when high-side switch turns off in 12 V input buck regulators. IC Role / Device Role / Timing Role: Sustains continuous current flow during low-side conduction phase; duty cycle dependent. Use Value: C = 3.0 pF minimizes capacitive coupling into feedback network, preserving regulation stability in noise-sensitive analog subsystems. | Use Scenario: Suppresses inductive kickback from relay coils and solenoid drivers in 12 V/24 V BCMs. IC Role / Device Role / Timing Role: Transient voltage suppressor clamping coil back-EMF within safe MCU I/O limits. Use Value: IR ≤ 0.2 µA ensures negligible leakage current in always-on wake-up circuits, extending battery life beyond 10 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Rohm RB050M-40 | VR = 40 V, trr = 30 ns, VF = 0.51 V @ 1 A - lower voltage, faster, higher current rating. | Not suitable for >40 V clamping; better for low-VIN synchronous rectification. | Select only if system VR < 40 V and trr < 50 ns is mandatory; not a replacement for HSB83TR-E's 250 V capability. |
| Vishay VS-2EDH02-M3/86A | VR = 200 V, trr = 75 ns, VF = 1.15 V @ 200 mA - slightly lower VR, faster recovery, same package. | Marginally acceptable in 120 VAC-derived designs but lacks 50 V safety margin of HSB83TR-E. | Consider where VR = 200 V suffices and tighter trr tolerance is needed; verify derating for 250 V nominal systems. |
Compared with RB050M-40 and VS-2EDH02-M3/86A, the HSB83TR-E uniquely balances 250 V blocking, 100 ns recovery, and SC-70 size-making it optimal for space-constrained 24–48 V industrial power stages where both voltage margin and layout density are critical.
Availability
HSB83TR-E is available at Aetrix Electronics and suitable for DC-DC converter clamp circuits, flyback output rectification, buck freewheeling paths, and automotive BCM snubbers requiring stable component supply and long-term industrial lifecycle support.
Supply support for HSB83TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT markets.
The HSB83TR-E belongs to Renesas' legacy high-voltage switching diode family, engineered specifically for compact, high-efficiency offline and isolated DC-DC power conversion in space- and reliability-critical applications.
FAQ
What is the maximum continuous reverse voltage rating for HSB83TR-E?
The HSB83TR-E has a maximum continuous reverse voltage (VR) rating of 250 V, verified per its Absolute Maximum Ratings table. This value defines the highest steady-state DC reverse bias the device can sustain without breakdown. The HSB83TR-E also supports a non-repetitive peak reverse voltage (VRM) of 300 V for short-duration transients, making it suitable for clamp applications in 24–48 V industrial power systems where voltage margins are essential.
Does HSB83TR-E have a pin 1 connection, and what is its function?
No, pin 1 of the HSB83TR-E is a no-connect (NC) terminal-internally unconnected and electrically inactive. The functional terminals are pin 2 (anode) and pin 3 (cathode), as confirmed in the official outline drawing and electrical specifications. This NC configuration allows flexible PCB layout while maintaining strict isolation between the anode-cathode path and adjacent traces, reducing parasitic coupling in high-dV/dt environments where the HSB83TR-E is deployed.
What is the reverse recovery time (trr) test condition for HSB83TR-E?
The reverse recovery time (trr) of the HSB83TR-E is specified as 100 ns under the standardized test condition: IF = IR = 30 mA, reverse recovery current (Irr) = 3 mA, and load resistance (RL) = 100 Ω. This measurement reflects real-world switching behavior in high-frequency DC-DC converters. The HSB83TR-E maintains this trr value across its qualified operating temperature range, ensuring consistent timing performance in thermally demanding applications like enclosed power adapters.
Can HSB83TR-E be used in place of HSB83J?
Yes, HSB83TR-E is the updated part number replacing HSB83J in Renesas' product lineup, sharing identical electrical specifications, pinout, package (CMPAK/SC-70), and thermal ratings. Both parts exhibit VR = 250 V, trr = 100 ns, VF ≤ 1.2 V at 100 mA, and identical terminal assignments (pin 1 NC, pin 2 anode, pin 3 cathode). Designers may use HSB83TR-E as a direct form-fit-function replacement for HSB83J without layout or firmware changes.
What is the junction-to-ambient thermal resistance (RθJA) for HSB83TR-E?
The datasheet for HSB83TR-E does not specify junction-to-ambient thermal resistance (RθJA) as a standalone parameter. Instead, thermal performance is defined via absolute maximum junction temperature (Tj = 125°C) and storage temperature range (–55°C to +125°C). For PCB-level thermal design, users should follow Renesas' recommended land pattern for the CMPAK package-including 1.25 mm² copper pour on the cathode pad-and assume typical RθJA ≈ 350°C/W under standard JEDEC JESD51-7 conditions, consistent with industry SC-70 diodes of comparable construction.
HSB83TR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
HSB83TR-E FAQ
1.How can I place an order for HSB83TR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HSB83TR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HSB83TR-E reliable?
The price and inventory of HSB83TR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HSB83TR-E is usually 5 days.
3.What payment methods are accepted for HSB83TR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HSB83TR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HSB83TR-E?
HSB83TR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HSB83TR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HSB83TR-E?
For technical support, including HSB83TR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HSB83TR-E requirements.
6.How does Aetrix verify that HSB83TR-E is sourced from the original manufacturer or authorized distributors?
All HSB83TR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HSB83TR-E meets industry standards.
7.What is the process for return or replacement of HSB83TR-E?
All HSB83TR-E units undergo pre-shipment inspection (PSI). If there is an issue with HSB83TR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HSB83TR-E part is unused and in its original packaging.
Return procedure for HSB83TR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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