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Renesas HSB83YP-JTR-E

Part No.:
HSB83YP-JTR-E
Manufacturer:
Renesas
Category:
Single Diodes
Package:
-
Datasheet:
AetrixHSB83YP-JTR-E.pdf
Description:
RECTIFIER, 2 ELEMENT, 0.1A, 300V
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,316,177

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Product details

Overview

HSB83YP-JTR-E from Renesas Electronics (formerly Hitachi) is a silicon epitaxial planar high-voltage switching diode in CMPAK (SC-70) package, rated for 250 V reverse voltage, 300 mA peak forward current, and 100 ns reverse recovery time; used in compact DC-DC converter flyback snubbers and low-power AC/DC auxiliary supplies.

For engineers reviewing the HSB83YP-JTR-E datasheet, HSB83YP-JTR-E pinout, HSB83YP-JTR-E application, or HSB83YP-JTR-E equivalent, key selection criteria include verified VR = 250 V rating, trr ≤ 100 ns under IF = IR = 30 mA conditions, IR ≤ 0.2 µA at VR = 250 V, and SC-70 footprint compatibility with high-density SMT assembly.

Technical Context

This diode employs an epitaxial planar junction structure optimized for fast switching and stable high-voltage blocking. Its low junction capacitance (C = 3.0 pF at VR = 0 V, f = 1 MHz) and controlled minority-carrier lifetime enable clean turn-off in 100–500 kHz switching power stages.

The device operates with a maximum junction temperature of 125°C and supports storage across –55°C to +125°C. It is not designed for avalanche operation or repetitive surge duty beyond IFSM = 2 A (10 ms, single half-sine).

Key Specifications

ParameterValue and Actual Design Meaning
VR (Reverse Voltage)250 V - Maximum continuous DC or RMS reverse bias before significant leakage or breakdown.
trr (Reverse Recovery Time)100 ns - Measured at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω; defines minimum off-time in hard-switched topologies.
IR (Reverse Current)0.2 µA max at VR = 250 V - Ensures low standby loss in high-impedance bias networks and snubbers.
VF (Forward Voltage)1.2 V max at IF = 100 mA - Limits conduction loss in low-duty-cycle clamp paths.
C (Junction Capacitance)3.0 pF at VR = 0 V, f = 1 MHz - Minimizes capacitive feedthrough and EMI in high-frequency switching nodes.
PackageCMPAK (JEDEC SC-70) - 3-pin surface-mount outline with 1.25 mm × 0.9 mm footprint and 0.425 mm pitch; supports automated placement.

Pinout & Package

CMPAK (SC-70) package: 3-terminal surface-mount plastic package with exposed die pad (non-electrical), 1.25 mm × 0.9 mm body, 0.425 mm lead pitch, and 0.65 mm height. Pin 1 is NC (no connection), Pin 2 is Anode, Pin 3 is Cathode.

Pin/TerminalCircuit RoleDesign Meaning
1No Connection (NC)Electrically isolated terminal; no internal bond wire or junction connection; must remain unconnected on PCB.
2AnodePositive terminal for forward conduction; connects to higher-potential node in rectifier or clamp path.
3CathodeNegative terminal for forward conduction; ties to lower-potential node (e.g., switch node or ground reference).

Key Features

FeatureDesign Value
High-voltage blockingVR = 250 V enables use in 200 VAC-derived rails and 12–24 V flyback primary-side snubbers without derating.
Fast recovery performancetrr ≤ 100 ns reduces switching losses and ringing in 200–500 kHz SMPS designs.
Low leakage currentIR ≤ 0.2 µA at VR = 250 V maintains efficiency in high-impedance voltage divider or feedback bias networks.
Compact SC-70 footprintCMPAK package allows placement in <1.5 mm² board area, supporting ultra-dense power module layouts.

Applications

Switch-Mode Power Supply SnubberAC/DC Auxiliary Bias Supply

Use Scenario: Clamp voltage spikes across MOSFETs in flyback or forward converters operating at 200–300 kHz.

IC Role / Device Role / Timing Role: Fast-recovery diode in RCD snubber network, absorbing turn-off energy and limiting dv/dt stress.

Use Value: 100 ns trr ensures minimal tail current overlap with switch turn-on, reducing dissipation in the snubber resistor.

Use Scenario: Rectify low-current AC windings (e.g., transformer bias taps) delivering <10 mA to IC bias rails.

IC Role / Device Role / Timing Role: High-voltage, low-leakage rectifier providing isolated DC bias to PWM controllers or gate drivers.

Use Value: 0.2 µA IR at 250 V prevents excessive quiescent current draw in high-resistance bias dividers.

Low-Power LED Driver FlybackIndustrial Sensor Signal Conditioning

Use Scenario: Secondary-side rectification in <5 W isolated LED drivers with 12–24 V output.

IC Role / Device Role / Timing Role: Output rectifier handling pulsed 100 mA loads with minimal VF-induced drop and thermal rise.

Use Value: 1.2 V VF max at 100 mA keeps conduction loss below 120 mW, supporting thermally constrained enclosures.

Use Scenario: Protection and level-shifting in analog front-ends interfacing ±15 V industrial sensors.

IC Role / Device Role / Timing Role: High-impedance clamping diode limiting input transients to ±250 V while preserving signal integrity.

Use Value: 3.0 pF capacitance minimizes loading on high-Z sensor outputs (<100 kΩ source impedance).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast-switching diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
RB520S-30T1GVR = 30 V, trr = 4 ns, VF = 0.33 V @ 100 mA - lower voltage, much faster, lower VF.Not suitable for >50 V reverse applications; limited to low-voltage synchronous rectification or signal clamping.Select only when VR < 30 V and sub-10 ns trr is required; incompatible with 250 V blocking needs of HSB83YP-JTR-E.
1N4148WVR = 100 V, trr = 4 ns, VF = 1.25 V @ 10 mA - lower VR, faster trr, same VF range but rated at lower current.Acceptable only in <100 V circuits with light loads; insufficient for 250 V snubber or auxiliary supply use.Use where VR ≤ 100 V and layout space allows larger SOD-123; not a functional replacement for HSB83YP-JTR-E's voltage class.

Compared with RB520S-30T1G and 1N4148W, the HSB83YP-JTR-E uniquely delivers 250 V blocking with 100 ns recovery in SC-70 - enabling compact, high-voltage snubbing where lower-VR alternatives fail.

Availability

HSB83YP-JTR-E is available at Aetrix Electronics and suitable for switch-mode power supply snubbers, AC/DC auxiliary bias supplies, and low-power LED driver flyback rectification requiring stable component supply and consistent SC-70 packaging.

Supply support for HSB83YP-JTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.

The HSB83YP-JTR-E belongs to Renesas' legacy high-voltage discrete diode family, originally developed by Hitachi for reliable, compact switching in space-constrained power conversion systems.

FAQ

What is the maximum reverse voltage rating for HSB83YP-JTR-E?

The HSB83YP-JTR-E has a specified reverse voltage (VR) rating of 250 V and a peak reverse voltage (VRM) rating of 300 V. These values are validated per ADE-208-489(Z) Rev 0 test conditions at Ta = 25°C. Operation above 250 V DC or RMS requires derating per thermal and reliability guidelines in the official Renesas datasheet for HSB83YP-JTR-E.

Does HSB83YP-JTR-E have a pin 1 connection?

No - pin 1 of the HSB83YP-JTR-E is designated NC (no connection) and contains no internal electrical connection. The device uses only pins 2 (Anode) and 3 (Cathode) for circuit functionality. PCB layout must leave pin 1 unconnected and avoid solder mask openings or copper traces that could cause unintended coupling.

What is the reverse recovery time specification for HSB83YP-JTR-E?

The reverse recovery time (trr) of HSB83YP-JTR-E is 100 ns maximum, measured under the standardized condition: IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω. This value reflects its suitability for 200–500 kHz switching power applications where fast turn-off minimizes switching loss and voltage overshoot in snubber circuits.

Is HSB83YP-JTR-E compatible with reflow soldering processes?

Yes - the HSB83YP-JTR-E in CMPAK (SC-70) package is qualified for standard Pb-free reflow soldering per J-STD-020. Peak temperature must not exceed 260°C for ≤ 10 seconds. Thermal profile must respect the device's maximum junction temperature limit of 125°C during assembly, and board-level thermal mass should be considered to avoid localized overheating of the HSB83YP-JTR-E die.

What does the "JTR-E" suffix indicate in HSB83YP-JTR-E?

The "JTR-E" suffix in HSB83YP-JTR-E denotes Renesas' tape-and-reel packaging format: "JTR" specifies 8 mm carrier tape with 3 mm pocket depth, and "E" indicates compliance with RoHS and halogen-free material requirements. This matches the ordering code defined in the original Hitachi documentation ADE-208-489(Z) for the HSB83YP-JTR-E variant.

HSB83YP-JTR-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Technology:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-

HSB83YP-JTR-E FAQ

1.How can I place an order for HSB83YP-JTR-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HSB83YP-JTR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HSB83YP-JTR-E reliable?

The price and inventory of HSB83YP-JTR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HSB83YP-JTR-E is usually 5 days.

3.What payment methods are accepted for HSB83YP-JTR-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HSB83YP-JTR-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HSB83YP-JTR-E?

HSB83YP-JTR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HSB83YP-JTR-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HSB83YP-JTR-E?

For technical support, including HSB83YP-JTR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HSB83YP-JTR-E requirements.

6.How does Aetrix verify that HSB83YP-JTR-E is sourced from the original manufacturer or authorized distributors?

All HSB83YP-JTR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HSB83YP-JTR-E meets industry standards.

7.What is the process for return or replacement of HSB83YP-JTR-E?

All HSB83YP-JTR-E units undergo pre-shipment inspection (PSI). If there is an issue with HSB83YP-JTR-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HSB83YP-JTR-E part is unused and in its original packaging.

Return procedure for HSB83YP-JTR-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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