My Inquiry
My Account
Renesas HSD119-NKRF-E
- Part No.:
- HSD119-NKRF-E
- Manufacturer:
- Renesas
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
HSD119-NKRF-E.pdf
- Description:
- DIODE FOR HIGH SPEED SWITCHING
- Quantity:
- Payment:
- Shipping:
Inventory:8,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HSD119-NKRF-E from Renesas is a silicon epitaxial planar high-speed switching diode in SFP package, featuring 2.0 pF max capacitance, 3.0 ns max reverse recovery time, and 80 V reverse voltage rating; used in RF signal routing, high-frequency detector circuits, and fast-switching power supply snubbers.
For engineers reviewing the HSD119-NKRF-E datasheet, HSD119-NKRF-E pinout, HSD119-NKRF-E application, or HSD119-NKRF-E equivalent, key selection criteria include low-junction-capacitance operation at 1 MHz, sub-3 ns trr under 10 mA/6 V test conditions, and surface-mount compatibility with 0.55 mm lead pitch and 1.30 mm body width.
Technical Context
This diode employs an epitaxial planar structure to minimize minority carrier storage, enabling rapid turn-off essential for >100 MHz switching applications. Its low 2.0 pF capacitance at 0 V bias supports minimal signal distortion in RF coupling paths.
The 3.0 ns reverse recovery time is measured under standardized IF = 10 mA, VR = 6 V, RL = 50 Ω conditions, confirming suitability for pulse shaping and high-speed demodulation where charge removal speed dictates system timing fidelity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 80 V - maximum continuous DC blocking capability without breakdown |
| Reverse Recovery Time (trr) | 3.0 ns max - enables clean edge transitions in >100 MHz digital or RF switching |
| Junction Capacitance (C) | 2.0 pF max at 0 V, 1 MHz - minimizes loading on high-impedance RF nodes |
| Forward Voltage (VF) | 0.8 V max at 10 mA - ensures low conduction loss in low-current signal path applications |
| Average Rectified Current (IO) | 100 mA - supports continuous operation in detector and clamp circuits |
| Junction Temperature (Tj) | 125 °C - allows reliable operation in compact, thermally constrained PCB layouts |
Pinout & Package
Package: Super small Flat Lead Package (SFP), JEITA code PUSF0002ZB-A, dimensions 1.30 × 0.90 × 0.55 mm (L × W × H), mass 0.0010 g, surface-mount compatible with cathode-marked top-side identification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to circuit ground or lower-potential node; marked side of package |
| 2 | Anode | Connected to input signal or higher-potential node; unmarked side of package |
Key Features
| Feature | Design Value |
|---|---|
| Low junction capacitance | 2.0 pF max enables minimal phase shift in 50 Ω RF signal paths up to 1 GHz |
| Ultra-fast reverse recovery | 3.0 ns max supports accurate pulse edge preservation in sampling and gating circuits |
| SFP surface-mount package | 0.55 mm lead pitch and 1.30 mm width allow dense layout in space-constrained RF modules |
| High thermal reliability | 125 °C max junction temperature supports operation adjacent to power stages without derating |
Applications
| RF Signal Switching | High-Frequency Detector |
|---|---|
Use Scenario: Bidirectional RF signal routing in 800 MHz–2.4 GHz front-end modules using PIN diode switching topology. IC Role / Device Role / Timing Role: High-speed switching element controlling RF path insertion/loss via forward/reverse bias state. Use Value: 2.0 pF capacitance and 3.0 ns trr ensure <0.2 dB insertion loss variation and <10 ps timing skew across band. | Use Scenario: Envelope detection in AM/FM receiver IF stages operating at 10.7 MHz and 455 kHz. IC Role / Device Role / Timing Role: Low-capacitance rectifier converting modulated RF carrier into baseband audio signal. Use Value: Sub-1 V VF and 2.0 pF C maintain linearity and bandwidth response up to 5 MHz output. |
| Snubber Circuit | Clamp Protection |
Use Scenario: Turn-off snubber network across MOSFET drains in 500 kHz DC-DC converters. IC Role / Device Role / Timing Role: Fast-recovery diode absorbing inductive kickback energy during switching transitions. Use Value: 3.0 ns trr prevents voltage overshoot exceeding 85 V VRM rating during 100 ns edge events. | Use Scenario: Input overvoltage clamp protecting ADC front-end inputs in industrial data acquisition systems. IC Role / Device Role / Timing Role: Low-leakage (0.1 µA max) shunt diode limiting transient excursions above reference rail. Use Value: 0.1 µA IR at 80 V ensures <1 nA leakage-induced offset error in 16-bit precision measurement paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RX119-001 | Same SFP package, 2.5 pF max C, 4.0 ns max trr, 75 V VR | Higher capacitance and slower recovery limit use in >800 MHz RF paths | Acceptable for sub-500 MHz detector or clamp roles where margin exists |
| BAV99,115 | SC-70 package, 2.0 pF C, 4.0 ns trr, 70 V VR, dual configuration | Dual-diode layout requires redesign; slightly lower VR reduces safety margin in 80 V systems | Preferred when dual-channel routing or tighter board area is required, not for single-diode drop-in |
Compared with HSD119-NKRF-E, RX119-001 trades 0.5 pF and 1 ns performance for broader availability, while BAV99,115 offers dual functionality at the cost of package compatibility and reduced voltage headroom-neither is pin-compatible, requiring layout revision.
Availability
HSD119-NKRF-E is available at Aetrix Electronics and suitable for RF front-end design, high-frequency detector circuits, and fast-switching snubber networks requiring stable component supply and long-term obsolescence management.
Supply support for HSD119-NKRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.
The HSD119-NKRF-E belongs to Renesas' legacy high-speed switching diode product line, engineered specifically for RF signal integrity and fast transient response in compact surface-mount systems.
FAQ
What is the maximum reverse voltage rating for HSD119-NKRF-E?
The HSD119-NKRF-E has a peak reverse voltage (VRM) rating of 85 V and a continuous reverse voltage (VR) rating of 80 V at Ta = 25°C. Operation beyond 80 V DC or repetitive 85 V transients risks irreversible junction breakdown. Derating is recommended above 25°C ambient per the datasheet's thermal resistance curve.
Does HSD119-NKRF-E have a specified forward voltage at 100 mA?
Yes, the HSD119-NKRF-E specifies a maximum forward voltage (VF2) of 1.2 V at IF = 100 mA and Ta = 25°C. This value reflects conduction loss under moderate current drive and is critical for power-sensitive detector and clamp applications where voltage headroom is constrained.
Is HSD119-NKRF-E suitable for 1 GHz RF switching applications?
Yes, the HSD119-NKRF-E is suitable for 1 GHz RF switching due to its 2.0 pF max junction capacitance and 3.0 ns max reverse recovery time, both verified under standard test conditions. Measured capacitance remains below 1.5 pF up to 20 V reverse bias, supporting low-insertion-loss performance in 50 Ω systems.
What is the package footprint and lead pitch of HSD119-NKRF-E?
The HSD119-NKRF-E uses the Super small Flat Lead Package (SFP) with JEITA code PUSF0002ZB-A. Its body measures 1.30 mm × 0.90 mm, with 0.55 mm lead pitch and 0.25 mm lead width. The cathode is marked by a laser "H1" symbol adjacent to pin 1 on the top surface.
How does the reverse recovery time of HSD119-NKRF-E compare to general-purpose diodes?
The HSD119-NKRF-E achieves 3.0 ns max trr-over 10× faster than typical general-purpose diodes (e.g., 1N4148 at ~4 ns min but 25 ns typical). This is enabled by epitaxial planar construction and optimized doping, making HSD119-NKRF-E appropriate for edge-sensitive applications like pulse shaping and high-speed sampling where stored charge must clear rapidly.
HSD119-NKRF-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
HSD119-NKRF-E FAQ
1.How can I place an order for HSD119-NKRF-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HSD119-NKRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HSD119-NKRF-E reliable?
The price and inventory of HSD119-NKRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HSD119-NKRF-E is usually 5 days.
3.What payment methods are accepted for HSD119-NKRF-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HSD119-NKRF-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HSD119-NKRF-E?
HSD119-NKRF-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HSD119-NKRF-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HSD119-NKRF-E?
For technical support, including HSD119-NKRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HSD119-NKRF-E requirements.
6.How does Aetrix verify that HSD119-NKRF-E is sourced from the original manufacturer or authorized distributors?
All HSD119-NKRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HSD119-NKRF-E meets industry standards.
7.What is the process for return or replacement of HSD119-NKRF-E?
All HSD119-NKRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HSD119-NKRF-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HSD119-NKRF-E part is unused and in its original packaging.
Return procedure for HSD119-NKRF-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HSD119-NKRF-E Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
