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Renesas HSK120TL-S-E
- Part No.:
- HSK120TL-S-E
- Manufacturer:
- Renesas
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
HSK120TL-S-E.pdf
- Description:
- DIODE FOR HIGH SPEED SWITCHING
- Quantity:
- Payment:
- Shipping:
Inventory:5,000
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Product details
Overview
HSK120TL-S-E from Renesas Technology is a silicon epitaxial planar switching diode in LLD package, featuring trr ≤ 3.0 ns, VF ≤ 0.8 V at IF = 10 mA, and VRM = 70 V. It serves as a high-speed rectifier in DC-DC converter output stages, RF detector circuits, and signal demodulation paths where low capacitance (C ≤ 3.0 pF) and fast recovery are critical.
For engineers reviewing the HSK120TL-S-E datasheet, HSK120TL-S-E pinout, HSK120TL-S-E application, or HSK120TL-S-E equivalent, key selection criteria include reverse recovery time, forward voltage drop at low current, peak reverse voltage rating, junction temperature limit (175°C), and LLD surface-mount compatibility for high-density PCB layouts.
Technical Context
This diode employs a silicon epitaxial planar structure optimized for minimal minority carrier storage, enabling sub-4 ns reverse recovery. Its low C = 3.0 pF at 0 V and f = 1 MHz supports high-frequency signal routing without parasitic loading.
The device operates across –65°C to +175°C storage and junction temperature ranges, with rated IO = 150 mA average rectified current and IFSM = 4 A non-repetitive surge capability under 1 µs pulse width - suitable for transient-tolerant power rail clamping.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| trr | ≤ 3.0 ns - enables operation up to ~100 MHz switching in clipping/clamping applications |
| VF | ≤ 0.8 V at IF = 10 mA - minimizes conduction loss in low-current signal path rectification |
| VRM | 70 V - supports use in 48 V telecom and industrial auxiliary supply rails |
| C | ≤ 3.0 pF at VR = 0 V, f = 1 MHz - preserves signal integrity in RF detector and sampling circuits |
| IR | ≤ 0.1 µA at VR = 60 V - ensures low leakage in battery-backed or high-impedance bias networks |
| Tj max | 175°C - allows placement near hot components in compact power modules |
Pinout & Package
HSK120TL-S-E uses the LLD (Leadless Low-profile Diode) package: 1.4 mm diameter, 0.35 mm height, 0.027 g mass, designed for automated high-speed placement and reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher-potential node during forward conduction; marked by cathode band on package |
| 2 | Anode | Connected to lower-potential node during forward conduction; internal P-region contact |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast recovery | trr ≤ 3.0 ns enables clean edge transitions in pulse shaping and sampling gates |
| Low forward voltage | VF ≤ 0.8 V at 10 mA reduces insertion loss in RF detector diodes |
| Minimal junction capacitance | C ≤ 3.0 pF avoids detuning of 100+ MHz LC tank circuits |
| High-temperature operation | Tj up to 175°C supports integration into thermally constrained DC-DC modules |
Applications
| RF Signal Detection | DC-DC Converter Output Rectification |
|---|---|
Use Scenario: Demodulating AM signals in UHF receiver front-ends operating at 433–915 MHz. IC Role / Device Role / Timing Role: Passive envelope detector diode converting RF carrier amplitude to baseband voltage. Use Value: 3.0 pF capacitance prevents resonant frequency shift in matching networks; 3.0 ns trr avoids distortion of fast-modulated pulses. | Use Scenario: Synchronous rectification replacement in isolated 12 V → 3.3 V flyback converters for industrial PLCs. IC Role / Device Role / Timing Role: High-speed freewheeling diode clamping transformer secondary during MOSFET off-time. Use Value: 70 V VRM withstands reflected primary-side spikes; 175°C Tj rating permits mounting near power transformer. |
| High-Density Signal Routing | ESD-Protected Logic Interface Clamping |
Use Scenario: Bidirectional signal level translation between 3.3 V FPGA I/O and 5 V sensor interface lines. IC Role / Device Role / Timing Role: Low-capacitance steering diode limiting voltage excursion during logic state transitions. Use Value: 3.0 pF C avoids signal rise/fall time degradation; 0.8 V VF ensures tight clamping window around rail voltages. | Use Scenario: Input protection network for RS-485 transceivers exposed to ±8 kV contact ESD per IEC 61000-4-2. IC Role / Device Role / Timing Role: Fast-turn-on clamp diverting ESD current before IC damage threshold is exceeded. Use Value: 3.0 ns trr ensures clamping activation within first 10 ns of ESD event; 4 A IFSM handles peak ESD current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB520S-30T1G | VF = 0.33 V typ at IF = 100 mA; trr = 4.0 ns; SOD-523 package (1.2 × 0.8 mm) | Lower VF benefits higher-current rectification; larger trr limits >50 MHz RF use | Prefer for <50 mA average current where lower VF outweighs trr penalty |
| BAT54C | trr = 5.0 ns; C = 10 pF; dual common-cathode configuration in SOT-23 | Higher capacitance degrades >30 MHz signal fidelity; dual-diode layout saves board space | Choose when dual-diode topology is needed and trr/C specs permit relaxed timing |
Compared with RB520S-30T1G and BAT54C, the HSK120TL-S-E delivers the lowest trr (≤3.0 ns) and C (≤3.0 pF) among the three, making it uniquely suited for RF detection and ultrafast clamping where nanosecond-level timing and sub-5 pF loading are mandatory.
Availability
HSK120TL-S-E is available at Aetrix Electronics and suitable for DC-DC converter design, RF detector implementation, and ESD protection circuitry requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial control and communications equipment.
Supply support for HSK120TL-S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Technology Corp. (now part of Renesas Electronics Corporation) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and discrete power devices with emphasis on automotive, industrial, and infrastructure applications.
The HSK120TL-S-E belongs to Renesas' legacy high-speed switching diode product line, engineered specifically for RF and precision rectification applications demanding nanosecond recovery and minimal parasitic capacitance.
FAQ
What is the maximum reverse recovery time specified for HSK120TL-S-E?
The HSK120TL-S-E has a maximum reverse recovery time (trr) of 3.0 ns under test conditions of IF = 10 mA, VR = 6 V, RL = 50 Ω, and Irr = 0.1IR. This value is guaranteed across the full operating temperature range and is measured using standardized high-speed pulse methods per JIS C 7031.
Does HSK120TL-S-E have a cathode band marking, and how is polarity identified?
Yes, the HSK120TL-S-E features a visible cathode band on the LLD package surface adjacent to Pin 1. Pin 1 is the cathode terminal, and Pin 2 is the anode - consistent with standard diode polarity conventions and confirmed in the official Renesas datasheet Rev.4.00.
What is the junction-to-ambient thermal resistance (RθJA) for HSK120TL-S-E?
The datasheet for HSK120TL-S-E does not specify RθJA. As an unmounted, leadless surface-mount diode in the LLD package, thermal performance depends entirely on PCB layout - including copper area, thickness, and via count. No RθJA value is published or guaranteed by Renesas for this discrete device.
Can HSK120TL-S-E be used in place of a Schottky diode in low-voltage rectification?
The HSK120TL-S-E is a silicon epitaxial planar diode, not a Schottky. Its VF (≤0.8 V at 10 mA) is higher than typical Schottky diodes, and it lacks metal-semiconductor junction advantages. Use HSK120TL-S-E only where ultra-fast trr and low C are prioritized over low VF - not as a general Schottky replacement.
Is HSK120TL-S-E compliant with RoHS and lead-free soldering standards?
HSK120TL-S-E was released in 2004 under Rev.4.00 and predates mandatory RoHS enforcement. The datasheet does not declare RoHS compliance or lead-free finish. For modern designs requiring RoHS, consult Renesas' current-generation equivalents or verify material declarations directly with Renesas support.
HSK120TL-S-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
HSK120TL-S-E FAQ
1.How can I place an order for HSK120TL-S-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HSK120TL-S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HSK120TL-S-E reliable?
The price and inventory of HSK120TL-S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HSK120TL-S-E is usually 5 days.
3.What payment methods are accepted for HSK120TL-S-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HSK120TL-S-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HSK120TL-S-E?
HSK120TL-S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HSK120TL-S-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HSK120TL-S-E?
For technical support, including HSK120TL-S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HSK120TL-S-E requirements.
6.How does Aetrix verify that HSK120TL-S-E is sourced from the original manufacturer or authorized distributors?
All HSK120TL-S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HSK120TL-S-E meets industry standards.
7.What is the process for return or replacement of HSK120TL-S-E?
All HSK120TL-S-E units undergo pre-shipment inspection (PSI). If there is an issue with HSK120TL-S-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HSK120TL-S-E part is unused and in its original packaging.
Return procedure for HSK120TL-S-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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