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Renesas HSM221C-JTL-E
- Part No.:
- HSM221C-JTL-E
- Manufacturer:
- Renesas
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
HSM221C-JTL-E.pdf
- Description:
- DIODE FOR HIGH SPEED SWITCHING
- Quantity:
- Payment:
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Inventory:12,000
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Product details
Overview
HSM221C-JTL-E from Renesas Electronics is a silicon epitaxial planar diode engineered for high-speed switching applications, featuring a maximum reverse recovery time of 3.0 ns, peak reverse voltage of 85 V, and low junction capacitance of 0.5–2.0 pF at 1 MHz. It operates with forward voltage as low as 0.76 V at 10 mA and supports average rectified current up to 100 mA. This device is deployed in high-frequency signal routing circuits such as RF detector stages and fast-switching DC-DC converter snubbers.
For engineers reviewing the HSM221C-JTL-E datasheet, HSM221C-JTL-E pinout, HSM221C-JTL-E application, or HSM221C-JTL-E equivalent, key selection criteria include verified trr ≤ 3.0 ns performance under IF = 10 mA / VR = 6 V conditions, MPAK package compatibility with high-density SMT assembly, and guaranteed IR ≤ 0.1 μA at VR = 80 V for low-leakage signal path integrity.
Technical Context
The HSM221C-JTL-E employs a silicon epitaxial planar structure optimized for minimal minority-carrier storage, enabling sub-4 ns reverse recovery. Its low capacitance (typ. 0.5 pF) and tight trr distribution support stable operation in 100+ MHz signal paths without waveform distortion.
This diode functions exclusively as a unidirectional high-speed switch - not a Zener, Schottky, or avalanche device - with NC (pin 1), Anode (pin 2), and Cathode (pin 3) terminal configuration. Junction temperature rating of 150°C ensures reliability in thermally constrained PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Recovery Time (trr) | Max 3.0 ns at IF = 10 mA, VR = 6 V, RL = 50 Ω - enables clean edge transitions in >100 MHz digital and RF switching |
| Peak Reverse Voltage (VRM) | 85 V - supports transient-tolerant signal clamping in 24–48 V industrial bus interfaces |
| Junction Capacitance (C) | 0.5–2.0 pF at VR = 0 V, f = 1 MHz - minimizes loading on high-Z RF nodes and clock distribution lines |
| Forward Voltage (VF) | 0.76 V min at IF = 10 mA - reduces conduction loss in low-voltage sampling and detection circuits |
| Reverse Current (IR) | Max 0.1 μA at VR = 80 V - preserves signal fidelity in precision analog front-ends and sensor bias networks |
| Average Rectified Current (IO) | 100 mA - sustains continuous duty-cycle operation in compact power management subsystems |
Pinout & Package
Package: MPAK (JEITA code PLSP0003ZC-A), surface-mount, 3-terminal plastic package with 0.011 g typical mass. Dimensions: D = 2.7–3.1 mm, E = 1.35–1.65 mm, e = 2.2–3.0 mm, L = 0.65 mm, b = 0.35–0.5 mm, c = 0.1–0.26 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | No Connect (NC) | Electrically isolated terminal - must remain unconnected to avoid parasitic coupling or thermal stress |
| 2 | Anode | Current entry point during forward conduction - routed to low-impedance drive source in switching paths |
| 3 | Cathode | Current exit point during forward conduction - tied to reference node or load return in high-speed layouts |
Key Features
| Feature | Design Value |
|---|---|
| High-Speed Switching | trr ≤ 3.0 ns ensures minimal timing skew in GHz-range pulse shaping and sampling gate circuits |
| Low Capacitance | C = 0.5 pF typ. prevents signal attenuation and phase shift in 50 Ω RF transmission lines |
| High-Voltage Robustness | VRM = 85 V withstands ESD transients and inductive kickback in relay driver and solenoid control |
| Thermal Stability | Tj = 150°C rating allows operation in sealed enclosures with limited airflow, e.g., motor drive modules |
Applications
| RF Signal Detector | High-Frequency Snubber |
|---|---|
Use Scenario: Demodulating AM/ASK-modulated RF carriers in 315 MHz/433 MHz ISM-band receivers. IC Role / Device Role / Timing Role: High-speed envelope detector diode converting RF bursts into baseband logic-level pulses. Use Value: Sub-3 ns trr and <2 pF capacitance preserve rise/fall times of short-duration RF packets without pulse broadening. |
Use Scenario: Suppressing voltage spikes across MOSFET drains in synchronous buck converters operating above 500 kHz. IC Role / Device Role / Timing Role: Fast-recovery clamp diode diverting inductive energy during high-side switch turn-off. Use Value: Low VF (0.76 V) minimizes conduction loss while 3.0 ns trr prevents shoot-through during critical dead-time intervals. |
| Logic-Level Translator | Sample-and-Hold Input Clamp |
Use Scenario: Level-shifting TTL/CMOS signals between 3.3 V and 5 V domains in mixed-voltage FPGA I/O banks. IC Role / Device Role / Timing Role: Bidirectional signal isolator using series-connected HSM221C-JTL-E pairs with shared cathode/anode ties. Use Value: NC pin enables compact dual-diode layout; low C and trr prevent intersymbol interference in 100+ Mbps data links. |
Use Scenario: Protecting ADC input stages from overvoltage during multiplexer channel switching in data acquisition systems. IC Role / Device Role / Timing Role: Precision clamping diode limiting input swing to ±0.7 V around reference rail. Use Value: IR ≤ 0.1 μA at 80 V reverse bias ensures no measurable offset drift in 16-bit+ measurement channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99,115 (Nexperia) | Double diode in SOT-23; trr = 4 ns max; VF = 1.25 V at 100 mA | Higher VF increases conduction loss; dual configuration suits differential clamping but adds layout area | Select when dual-diode topology or legacy SOT-23 footprint required; verify trr margin against 3 ns target |
| 1N4148W-7-F (Diodes Inc.) | SOD-123 package; trr = 4 ns max; VRM = 100 V; C = 4 pF typ. | Higher capacitance degrades RF performance; wider VRM useful only in >85 V systems | Choose for cost-sensitive industrial controls where 4 ns trr and 4 pF C are acceptable trade-offs |
Compared with BAV99,115 and 1N4148W-7-F, the HSM221C-JTL-E delivers superior high-frequency fidelity due to its lower capacitance (0.5 pF vs. ≥4 pF) and tighter trr specification (3.0 ns vs. 4 ns), making it preferred for RF detector and fast snubber roles where signal integrity is critical.
Availability
HSM221C-JTL-E is available at Aetrix Electronics and suitable for RF detector circuits, high-frequency snubber networks, logic-level translators, and sample-and-hold input clamps requiring stable component supply across production volumes.
Supply support for HSM221C-JTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and infrastructure markets.
The HSM221C-JTL-E belongs to Renesas' high-speed discrete diode product line, designed specifically for signal integrity-critical switching in RF, test equipment, and high-frequency power conversion.
FAQ
What is the maximum reverse recovery time specified for the HSM221C-JTL-E?
The HSM221C-JTL-E has a maximum reverse recovery time (trr) of 3.0 ns, measured under standardized conditions of IF = 10 mA, VR = 6 V, and RL = 50 Ω. This value is guaranteed across the full operating temperature range and is critical for maintaining timing accuracy in high-speed switching applications. The HSM221C-JTL-E achieves this performance via its silicon epitaxial planar construction, which minimizes carrier storage effects.
Does the HSM221C-JTL-E have a pin 1 connection, and what is its function?
No - pin 1 of the HSM221C-JTL-E is designated NC (No Connect) and must remain electrically unconnected in all PCB layouts. The active terminals are pin 2 (Anode) and pin 3 (Cathode), arranged in top-view order 2–1–3. Connecting pin 1 risks introducing parasitic capacitance or thermal imbalance, which could degrade the HSM221C-JTL-E's 3.0 ns trr performance or cause localized overheating.
What is the junction capacitance range of the HSM221C-JTL-E, and how does it affect RF applications?
The HSM221C-JTL-E exhibits junction capacitance ranging from 0.5 pF (typical) to 2.0 pF (maximum) at VR = 0 V and f = 1 MHz. This ultra-low capacitance minimizes signal loading on high-impedance RF nodes, preserving amplitude and phase response in detector, mixer, and antenna switch applications. At 100 MHz, the capacitive reactance remains >800 Ω, ensuring negligible insertion loss compared to alternatives with ≥4 pF C.
Can the HSM221C-JTL-E be used in place of a Schottky diode for high-speed switching?
The HSM221C-JTL-E is not a Schottky diode - it is a silicon epitaxial planar PN junction device. While it matches or exceeds many Schottky diodes in trr (e.g., 3.0 ns vs. 5–10 ns), its forward voltage (0.76–0.97 V) is higher than typical Schottky devices (0.2–0.4 V). Use the HSM221C-JTL-E where ultra-fast recovery and low capacitance outweigh forward-loss sensitivity - such as RF detectors - not low-VF power rectification.
What is the peak forward surge current rating for the HSM221C-JTL-E, and under what conditions is it valid?
The HSM221C-JTL-E supports a non-repetitive peak forward surge current (IFSM) of 4 A, specified for a single pulse duration of 1 μs. This rating applies only to transient overload events such as ESD-induced current spikes or inductive flyback surges. Continuous operation must remain within the average rectified current limit of 100 mA and peak forward current limit of 300 mA to ensure long-term reliability of the HSM221C-JTL-E.
HSM221C-JTL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
HSM221C-JTL-E FAQ
1.How can I place an order for HSM221C-JTL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HSM221C-JTL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HSM221C-JTL-E reliable?
The price and inventory of HSM221C-JTL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HSM221C-JTL-E is usually 5 days.
3.What payment methods are accepted for HSM221C-JTL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HSM221C-JTL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HSM221C-JTL-E?
HSM221C-JTL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HSM221C-JTL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HSM221C-JTL-E?
For technical support, including HSM221C-JTL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HSM221C-JTL-E requirements.
6.How does Aetrix verify that HSM221C-JTL-E is sourced from the original manufacturer or authorized distributors?
All HSM221C-JTL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HSM221C-JTL-E meets industry standards.
7.What is the process for return or replacement of HSM221C-JTL-E?
All HSM221C-JTL-E units undergo pre-shipment inspection (PSI). If there is an issue with HSM221C-JTL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HSM221C-JTL-E part is unused and in its original packaging.
Return procedure for HSM221C-JTL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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