My Inquiry
My Account
Renesas HSM2838CTR-E
- Part No.:
- HSM2838CTR-E
- Manufacturer:
- Renesas
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
HSM2838CTR-E.pdf
- Description:
- DIODE FOR HIGH SPEED SWITCHING
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HSM2838CTR-E from Renesas is a silicon epitaxial planar high-speed switching diode in MPAK (SC-59A) package, featuring 3.0 ns max reverse recovery time (trr), 80 V reverse voltage rating (VR), and 100 mA average rectified current (IO). It serves as a fast-switching signal or clamp diode in compact DC-DC converter feedback paths, high-frequency detector circuits, and logic-level translation interfaces.
For engineers reviewing the HSM2838CTR-E datasheet, HSM2838CTR-E pinout, HSM2838CTR-E application, or HSM2838CTR-E equivalent, key selection criteria include trr ≤ 3.0 ns, VR ≥ 80 V, VF ≤ 1.0 V at IF = 10 mA, and SC-59A footprint compatibility with automated SMT assembly.
Technical Context
This diode employs an epitaxial planar structure optimized for low charge storage and rapid carrier recombination, enabling sub-3 ns reverse recovery under IF = 10 mA / VR = 6 V / RL = 50 Ω test conditions. Its junction capacitance remains below 2.0 pF at 0 V bias and 1 MHz, supporting RF and high-speed digital signal integrity.
The dual-anode configuration (Pins 1 & 2 tied internally or used in parallel) provides redundancy or current-sharing capability within the same die, while the single cathode (Pin 3) ensures unidirectional conduction path definition in layout-sensitive applications like ESD protection clamping networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Recovery Time (trr) | Max 3.0 ns - enables operation up to ~100 MHz switching frequencies without tail current distortion |
| Peak Reverse Voltage (VRM) | 85 V - supports transient overvoltage tolerance in 48 V industrial bus interfaces |
| Forward Voltage (VF) | 0.76–0.97 V @ 10–100 mA - minimizes conduction loss in low-voltage logic-level clamping |
| Junction Capacitance (C) | 0.5–2.0 pF @ 0 V, 1 MHz - preserves signal edge fidelity in >100 Mbps data line protection |
| Average Rectified Current (IO) | 100 mA - sustains continuous duty-cycle operation in auxiliary power rail monitoring circuits |
| Junction Temperature (Tj) | 150 °C max - allows deployment in thermally constrained enclosed modules without derating |
Pinout & Package
Package: MPAK (JEITA code PLSP0003ZC-A), identical to SC-59A - 3-pin surface-mount plastic package with 2.7–3.1 mm body length, 1.35–1.65 mm width, and 0.65 mm nominal lead length; optimized for high-density placement and reflow-compatible terminations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode | Primary anode connection; electrically tied to Pin 2 internally; used for standard forward bias orientation |
| 2 | Anode | Secondary anode; redundant path or parallel current handling; same potential as Pin 1 |
| 3 | Cathode | Common cathode node; sole return path for forward current; defines polarity of conduction |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast recovery | trr ≤ 3.0 ns ensures minimal switching loss and reduced EMI in >50 MHz clock line clamping |
| Low forward voltage | VF ≤ 0.97 V at 100 mA enables efficient level-shifting in 3.3 V/1.8 V mixed-signal interfaces |
| Low junction capacitance | C ≤ 2.0 pF at 0 V maintains >1 GHz small-signal bandwidth in RF detector front-ends |
| MPAK package | SC-59A footprint supports 0.5 mm pitch pick-and-place and achieves <0.011 g unit mass for vibration-sensitive modules |
Applications
| High-Speed Logic Clamping | DC-DC Converter Feedback Snubbing |
|---|---|
Use Scenario: Protecting 3.3 V FPGA I/O banks from overshoot during hot-plug events in industrial control backplanes. IC Role / Device Role / Timing Role: Fast-clamp diode placed between I/O pin and 3.3 V rail to shunt transients within 3 ns. Use Value: trr ≤ 3.0 ns prevents latch-up by clearing stored charge before next logic edge arrives. | Use Scenario: Damping high-frequency ringing on optocoupler feedback path in isolated 12 V → 3.3 V flyback converters. IC Role / Device Role / Timing Role: Snubber diode across compensation network capacitor to absorb energy from parasitic LC resonance. Use Value: Low C (≤2.0 pF) avoids loading compensation pole while fast trr suppresses sustained oscillation. |
| RF Signal Detection | USB 2.0 ESD Protection |
Use Scenario: Envelope detection of 900 MHz ISM-band signals in battery-powered sensor nodes. IC Role / Device Role / Timing Role: Series-connected detector diode in passive peak-detect circuit driving ADC input. Use Value: VF consistency (0.76–0.97 V) across 10–100 mA enables stable DC output scaling with input amplitude. | Use Scenario: Secondary-stage clamping on USB D+ and D− lines downstream of primary TVS in medical handheld devices. IC Role / Device Role / Timing Role: Low-capacitance steering diode routing ESD current to VBUS/GND rails during ±8 kV contact discharge. Use Value: C ≤ 2.0 pF preserves USB 2.0 eye diagram integrity up to 480 Mbps without equalization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54CTR | trr = 5.0 ns (max), VR = 30 V, VF = 0.8 V @ 10 mA - slower and lower voltage rated | Suitable only for ≤24 V logic domains; not recommended for 48 V bus clamping | Select BAT54CTR only when VR ≤ 30 V and trr ≤ 5 ns suffices; verify layout clearance for higher trr-induced ringing |
| 1N4148W-7-F | trr = 4.0 ns (max), VR = 100 V, VF = 1.25 V @ 10 mA - higher VF increases conduction loss | Better VR margin but degrades efficiency in low-voltage (<3.3 V) clamping where VF dominates loss | Prefer 1N4148W-7-F for 100 V transient suppression; avoid in 1.8 V/3.3 V rail clamping due to excessive VF |
Compared with BAT54CTR and 1N4148W-7-F, the HSM2838CTR-E uniquely balances 80 V VR, ≤3.0 ns trr, and ≤0.97 V VF - making it optimal for 36–48 V industrial interface clamping where both speed and voltage headroom are critical.
Availability
HSM2838CTR-E is available at Aetrix Electronics and suitable for high-speed logic clamping, DC-DC feedback snubbing, and RF signal detection requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for HSM2838CTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Tokyo, Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.
The HSM2838CTR-E belongs to Renesas' legacy high-speed switching diode product line, engineered specifically for compact, high-frequency signal conditioning and transient suppression in space-constrained embedded systems.
FAQ
What is the maximum reverse recovery time specified for HSM2838CTR-E?
The maximum reverse recovery time (trr) for HSM2838CTR-E is 3.0 ns, measured under standardized conditions of IF = 10 mA, VR = 6 V, and RL = 50 Ω. This value is guaranteed across the full operating temperature range and is critical for maintaining signal integrity in high-frequency switching applications. The HSM2838CTR-E achieves this performance via its silicon epitaxial planar structure, which minimizes minority carrier lifetime.
Does HSM2838CTR-E have a dual-anode configuration, and how is it implemented?
Yes, HSM2838CTR-E features a dual-anode configuration with Pins 1 and 2 both designated as anodes and internally connected. This design allows either pin to serve as the primary anode terminal, providing layout flexibility and redundancy. In practice, both anodes may be used in parallel to reduce effective series resistance or accommodate asymmetric PCB routing constraints without altering electrical behavior. The HSM2838CTR-E datasheet confirms this internal tie in the pin arrangement diagram.
What is the junction capacitance range of HSM2838CTR-E, and at what bias condition is it specified?
The junction capacitance (C) of HSM2838CTR-E ranges from 0.5 pF to 2.0 pF, specified at 0 V reverse bias and 1 MHz test frequency. This low capacitance supports high-frequency signal coupling and minimizes loading effects in RF detector and high-speed data line applications. The HSM2838CTR-E maintains this range across –25°C to +75°C ambient, as shown in Figure 3 of its datasheet.
Can HSM2838CTR-E be used in 48 V automotive subsystems?
HSM2838CTR-E has a peak reverse voltage (VRM) of 85 V and reverse voltage (VR) rating of 80 V, making it suitable for 48 V nominal automotive subsystems where load dump transients remain within specification limits. However, Renesas explicitly states that HSM2838CTR-E is not qualified for automotive safety-critical applications. For non-safety 48 V infotainment or body-control modules, the HSM2838CTR-E is viable if thermal and layout constraints align with its 150 °C Tj rating.
What package type does HSM2838CTR-E use, and is it compatible with standard SC-59A footprints?
HSM2838CTR-E uses the MPAK package (JEITA code PLSP0003ZC-A), which is dimensionally identical to SC-59A. Its mechanical dimensions - including 2.7–3.1 mm length, 1.35–1.65 mm width, and 0.65 mm lead length - match JEDEC SC-59A specifications. Therefore, HSM2838CTR-E is fully compatible with existing SC-59A land patterns and automated assembly equipment calibrated for that footprint.
HSM2838CTR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
HSM2838CTR-E FAQ
1.How can I place an order for HSM2838CTR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HSM2838CTR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HSM2838CTR-E reliable?
The price and inventory of HSM2838CTR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HSM2838CTR-E is usually 5 days.
3.What payment methods are accepted for HSM2838CTR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HSM2838CTR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HSM2838CTR-E?
HSM2838CTR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HSM2838CTR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HSM2838CTR-E?
For technical support, including HSM2838CTR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HSM2838CTR-E requirements.
6.How does Aetrix verify that HSM2838CTR-E is sourced from the original manufacturer or authorized distributors?
All HSM2838CTR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HSM2838CTR-E meets industry standards.
7.What is the process for return or replacement of HSM2838CTR-E?
All HSM2838CTR-E units undergo pre-shipment inspection (PSI). If there is an issue with HSM2838CTR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HSM2838CTR-E part is unused and in its original packaging.
Return procedure for HSM2838CTR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HSM2838CTR-E Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
