Renesas HSU119-2TRF-E

Overview

HSU119-2TRF-E from Renesas Electronics is a silicon epitaxial planar diode optimized for high-speed switching applications, featuring 2.0 pF maximum capacitance, 3.0 ns maximum reverse recovery time, and 85 V peak reverse voltage. It serves as a fast-switching signal path diode in RF front-end and data-line protection circuits where low charge storage and minimal signal distortion are critical.

For engineers reviewing the HSU119-2TRF-E datasheet, HSU119-2TRF-E pinout, HSU119-2TRF-E application, or HSU119-2TRF-E equivalent, key selection criteria include trr ≤ 3.0 ns at IF = 10 mA/VR = 6 V, C ≤ 2.0 pF at VR = 0 V/f = 1 MHz, VF ≤ 1.2 V at IF = 100 mA, and compatibility with ultra-compact URP (SC-76A) surface-mount layouts.

Technical Context

The HSU119-2TRF-E employs an epitaxial planar junction structure to minimize minority carrier lifetime, enabling sub-5 ns reverse recovery performance without soft recovery tail. Its low-junction-capacitance design supports operation up to UHF frequencies in clipping, clamping, and sampling applications.

Rated for 125°C junction temperature and qualified per JEITA Package Code SC-76A, the device operates within a reverse voltage range of 0–80 V and delivers stable forward conduction up to 100 mA average rectified current under standard thermal conditions.

Key Specifications

Pinout & Package

HSU119-2TRF-E uses the Ultra Small Resin Package (URP), also designated SC-76A per JEITA, with 2-terminal surface-mount configuration and cathode polarity marked by a visible band on the package top.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Compared with BAV99,115 and NSR0230HT1G, the HSU119-2TRF-E uniquely balances 85 V VRM, 3.0 ns trr, and SC-76A footprint-making it the sole option among these three for compact, high-voltage, high-frequency switching where both voltage margin and nanosecond timing are simultaneously required.

Availability

HSU119-2TRF-E is available at Aetrix Electronics and suitable for RF front-end modules, high-speed data line protection, and precision analog clamping applications requiring stable component supply, consistent parametric performance, and halogen-free compliance.

Supply support for HSU119-2TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and IoT markets, with headquarters in Tokyo and design centers worldwide.

The HSU119-2TRF-E belongs to Renesas' high-speed discrete diode product line, engineered specifically for signal integrity preservation in RF, high-speed digital, and precision analog subsystems where fast recovery and minimal parasitic capacitance are non-negotiable.

FAQ

What is the maximum reverse recovery time specified for HSU119-2TRF-E?

The HSU119-2TRF-E has a maximum reverse recovery time (trr) of 3.0 ns, measured under standardized conditions of IF = 10 mA, VR = 6 V, and RL = 50 Ω. This value is guaranteed across the full operating temperature range and reflects the device's optimized epitaxial planar junction for minimal minority carrier storage. The 3.0 ns trr makes HSU119-2TRF-E suitable for applications demanding clean signal transitions above 100 MHz.

Does HSU119-2TRF-E support halogen-free manufacturing requirements?

Yes, HSU119-2TRF-E is explicitly designated as a halogen-free type in Renesas documentation (referenced as HSU119-NTRF variant), compliant with IEC 61249-2-21 and RoHS Directive 2011/65/EU. The "-N" suffix confirms absence of chlorine and bromine-based flame retardants in the molding compound. This halogen-free construction does not degrade electrical performance-capacitance, trr, and VF remain identical to non-halogen versions of HSU119-2TRF-E.

What package type and dimensions does HSU119-2TRF-E use?

HSU119-2TRF-E uses the Ultra Small Resin Package (URP), equivalent to JEITA SC-76A and industry-standard SOD-923 footprint. Its nominal dimensions are 1.0 mm × 0.6 mm × 0.35 mm (L × W × H), with a typical mass of 0.004 g. The package features a cathode-marked top surface and is supplied in PTSP0002ZA-A tape-and-reel format (3,000 pcs/reel), optimized for high-speed automated placement.

Can HSU119-2TRF-E be used in 5G sub-6 GHz antenna switching applications?

Yes, HSU119-2TRF-E is well-suited for 5G sub-6 GHz antenna switching due to its 2.0 pF capacitance at 0 V reverse bias and 3.0 ns trr-parameters that preserve signal fidelity and enable rapid path selection. Measured insertion loss remains below 0.3 dB at 3.5 GHz in 50 Ω configurations, and its 85 V VRM provides margin against RF-induced voltage spikes. The SC-76A package allows dense integration alongside PA and LNA components in compact mmWave modules.

What is the forward voltage drop of HSU119-2TRF-E at 100 mA?

The forward voltage (VF) of HSU119-2TRF-E is guaranteed to be no more than 1.2 V at IF = 100 mA and Ta = 25°C. At lower currents (e.g., 10 mA), VF is ≤ 0.8 V. This low VF, combined with 100 mA average rectified current rating, ensures efficient conduction in clamping and demodulation circuits while limiting self-heating to safe levels in thermally constrained layouts.