Renesas HSU285JTRF-E

Overview

HSU285JTRF-E from Renesas Electronics is a silicon Schottky barrier diode optimized for RF detection applications, featuring a maximum forward voltage of 0.27 V at 1 mA, 0.3 pF capacitance at 0.5 V reverse bias and 1 MHz, 2 V reverse voltage rating, 5 mA average rectified current, and ultra-small URP (SC-76A) surface-mount package. It delivers high detection sensitivity in compact wireless receivers and IF signal demodulation circuits.

For engineers reviewing the HSU285JTRF-E datasheet, HSU285JTRF-E pinout, HSU285JTRF-E application, or HSU285JTRF-E equivalent, key selection criteria include low junction capacitance for high-frequency response, low forward voltage for weak-signal detection efficiency, ESD robustness (10 V HBM), and compatibility with automated SMT assembly due to its standardized URP footprint.

Technical Context

The HSU285JTRF-E operates as a zero-bias or low-bias detector diode, leveraging Schottky barrier physics to enable nonlinear rectification of RF signals without external biasing. Its 0.3 pF capacitance and sub-0.3 V forward voltage directly support operation up to UHF frequencies while maintaining high sensitivity for envelope detection.

Designed for passive detection in low-power RF front-ends, it exhibits stable reverse leakage (<100 µA at 0.5 V) across −55°C to +125°C storage range and junction temperature limits up to 125°C. The device's ESD capability (10 V HBM, both polarities) ensures handling resilience during PCB assembly and system integration.

Key Specifications

Pinout & Package

HSU285JTRF-E uses the ultra-small URP (SC-76A) plastic package, measuring 1.70 mm × 0.90 mm × 0.45 mm (max), with gull-wing leads compatible with standard reflow profiles. The package code is PTSP0002ZA-A and mass is 0.004 g (typ).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF detector diode applications.

Compared with HSU285JTRF-E, HSMS-2850 offers greater reverse voltage headroom but trades 0.08 V higher forward drop, reducing weak-signal detection margin; BAR63-03W improves forward voltage slightly but increases capacitance by 0.1 pF and occupies 3× more PCB area-making HSU285JTRF-E optimal for space-constrained, low-input-power UHF detectors.

Availability

HSU285JTRF-E is available at Aetrix Electronics and suitable for RF remote control receivers, ISM band sensor nodes, and wireless audio transmitters requiring stable component supply, consistent parametric performance across production lots, and long-term availability for consumer electronics programs.

Supply support for HSU285JTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and IoT applications.

The HSU285JTRF-E belongs to Renesas' legacy RF Schottky diode family, engineered specifically for high-sensitivity, low-power RF detection in compact wireless devices-not general-purpose rectification.

FAQ

What is the maximum reverse voltage rating for HSU285JTRF-E?

The HSU285JTRF-E has an absolute maximum reverse voltage (VR) rating of 2 V at Ta = 25°C. Exceeding this value risks irreversible junction breakdown. This rating is specified in the Absolute Maximum Ratings table on page 2 of the official Renesas datasheet (REJ03G0009-0200 Rev.2.00). Designers must ensure peak RF voltage swing-including ringing or mismatch-induced overshoot-remains within this limit during operation.

Does HSU285JTRF-E require external bias for RF detection?

No, the HSU285JTRF-E is designed for zero-bias operation, leveraging its low forward voltage (≤0.27 V at 1 mA) and ultra-low capacitance (0.3 pF) to rectify RF signals without DC biasing. This eliminates need for bias resistors or voltage sources, simplifying front-end design in battery-powered detectors. Its performance is validated in the Forward Current vs. Forward Voltage curve (Fig.1) and Capacitance vs. Reverse Voltage plot (Fig.3) of the HSU285 datasheet.

What package type does HSU285JTRF-E use, and is it RoHS compliant?

HSU285JTRF-E uses the ultra-small URP (SC-76A) package, also referenced as PTSP0002ZA-A, with dimensions of 1.70 mm × 0.90 mm × 0.45 mm (max). Per Renesas documentation and compliance statements, the HSU285JTRF-E conforms to EU RoHS Directive requirements, containing no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits.

How does the ESD rating of HSU285JTRF-E impact handling and assembly?

The HSU285JTRF-E is rated for 10 V HBM ESD (C = 200 pF, RL = 0 Ω, both polarities), indicating moderate static sensitivity. While sufficient for standard SMT lines with grounded operators and ionizers, it requires ESD-safe handling-no direct finger contact with terminals-and adherence to IPC-610 Class 2 guidelines. This rating is measured per JEDEC JS-001 and documented in the Electrical Characteristics table on page 2 of the HSU285 datasheet.

Can HSU285JTRF-E be used in 2.4 GHz applications?

The HSU285JTRF-E is characterized up to 1 MHz for capacitance and DC parameters, but its 0.3 pF junction capacitance and low series resistance support usable detection performance up to ~1 GHz. At 2.4 GHz, insertion loss and parasitic effects increase significantly; Renesas does not specify or guarantee performance at 2.4 GHz. For 2.4 GHz ISM band detection, dedicated GaAs or zero-bias Schottky diodes with sub-0.1 pF C (e.g., AVAGO HSMS-286x) are recommended instead of HSU285JTRF-E.