Renesas HVD132-7KRF-E

Overview

HVD132-7KRF-E from Renesas Electronics is a silicon epitaxial planar PIN diode optimized for RF antenna switching in mobile handsets and wireless modules, featuring 0.5 pF max capacitance at 1 V/1 MHz, 2.0 Ω max forward resistance at 10 mA/100 MHz, and 60 V reverse voltage rating. Its super-small flat package (SFP) supports high-density surface-mount layouts in compact front-end modules.

For engineers reviewing the HVD132-7KRF-E datasheet, HVD132-7KRF-E pinout, HVD132-7KRF-E application, or HVD132-7KRF-E equivalent, key selection criteria include low RF insertion loss, high isolation at cellular/Wi-Fi bands, thermal stability under pulsed RF drive, and compatibility with automated reflow assembly without mechanical stress on the SFP body.

Technical Context

The HVD132-7KRF-E operates as a voltage-controlled RF switch via forward/reverse biasing of its PIN junction, enabling low-loss signal path selection between antennas and transceivers. Its low 0.5 pF capacitance ensures minimal detuning of matching networks at 800–2700 MHz, while 2.0 Ω forward resistance delivers <0.2 dB typical insertion loss at 900 MHz.

Designed for DC-biased operation, it sustains 100 mA forward current and withstands 60 V reverse voltage, with junction temperature limited to 125°C. The SFP package's 1.4 × 1.0 mm footprint and 0.3 mm height enable integration into space-constrained RF front-end modules without compromising thermal dissipation.

Key Specifications

Pinout & Package

Package: Super Small Flat Package (SFP), 2-pin surface-mount, 1.4 mm × 1.0 mm × 0.3 mm, cathode-marked top-side marking "2".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode antenna switching applications.

Compared with SKY13353-374LF and BAV99,115, the HVD132-7KRF-E uniquely balances 0.5 pF/2.0 Ω RF performance with 60 V reverse rating and 1.4 × 1.0 mm SFP footprint-making it optimal for space-constrained, multi-band cellular front-ends requiring both isolation and power handling.

Availability

HVD132-7KRF-E is available at Aetrix Electronics and suitable for cellular handset antenna switching, Wi-Fi/BT diversity modules, GPS front-end filtering, and LPWA sub-GHz transceiver designs requiring stable component supply and RoHS-compliant sourcing.

Supply support for HVD132-7KRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, infrastructure, and IoT applications.

The HVD132-7KRF-E belongs to Renesas' RF PIN diode product line, engineered specifically for high-isolation, low-loss antenna switching in compact wireless communication devices operating up to 2.7 GHz.

FAQ

What is the maximum reverse voltage rating for the HVD132-7KRF-E?

The HVD132-7KRF-E has a maximum reverse voltage (VR) rating of 60 V and a peak reverse voltage (VRM) of 65 V. This rating ensures reliable blocking of RF signals and protection against transient voltage spikes in antenna switching applications. Operating above 60 V reverse bias risks junction breakdown and permanent device failure. Always verify bias network design margins using the absolute maximum ratings table in the official HVD132-7KRF-E datasheet.

Does the HVD132-7KRF-E require special soldering precautions?

Yes-the HVD132-7KRF-E uses a Super Small Flat Package (SFP) that is mechanically sensitive to thermal stress. Renesas explicitly advises against using soldering irons due to risk of package cracking or bond wire damage. Reflow soldering per J-STD-020 profile is required, with peak temperature ≤260°C and time above liquidus ≤60 seconds. Avoid localized heating or mechanical force during placement or rework to preserve RF performance and reliability of the HVD132-7KRF-E.

What is the typical forward resistance of the HVD132-7KRF-E at 100 MHz?

The HVD132-7KRF-E has a maximum forward resistance (rf) of 2.0 Ω at IF = 10 mA and f = 100 MHz. Typical values are lower, contributing to insertion loss below 0.25 dB in 900 MHz antenna paths. This rf value is measured under RF-forward bias conditions and directly impacts RF power efficiency and thermal rise during sustained transmission. Designers should use this parameter with the 150 mW power dissipation limit to ensure safe operation of the HVD132-7KRF-E in continuous-duty applications.

Can the HVD132-7KRF-E be used in GPS L1 band applications?

Yes-the HVD132-7KRF-E is suitable for GPS L1 band (1575.42 MHz) front-end switching due to its 0.5 pF capacitance and stable RF characteristics up to 2.7 GHz. At L1 frequency, it provides >35 dB isolation in shunt configuration and adds <0.15 dB noise figure penalty when placed before LNA input. Its 125°C junction rating also supports operation near heat-generating baseband ICs in GNSS modules, making the HVD132-7KRF-E a validated choice for precision timing and location devices.

Is the HVD132-7KRF-E RoHS compliant and lead-free?

Yes-the HVD132-7KRF-E is RoHS compliant and lead-free, manufactured in accordance with EU Directive 2011/65/EU and Renesas' environmental policy. The SFP package uses matte tin termination, and all materials meet halogen-free and REACH SVHC requirements. Full compliance documentation-including test reports and declarations-is available through Renesas' official portal and Aetrix Electronics' quality assurance system for the HVD132-7KRF-E.