Infineon Technologies IAUA180N04S5N012AUMA1

Overview

IAUA180N04S5N012AUMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in the OptiMOS™ 5 family, rated for 40 V V_DS, 1.16 mΩ R_DS(on) max at V_GS = 10 V and I_D = 90 A, with 180 A continuous drain current capability and 175 °C maximum junction temperature. It serves as a high-current, low-loss main switch in 12 V automotive power distribution systems including battery disconnect and motor control inverters.

For engineers reviewing the IAUA180N04S5N012AUMA1 datasheet, IAUA180N04S5N012AUMA1 pinout, IAUA180N04S5N012AUMA1 application, or IAUA180N04S5N012AUMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 1.00 K/W R_thJC, 100% avalanche tested robustness, MSL3 reflow compatibility, and integrated body diode with 0.8–1.1 V V_SD at 90 A.

Technical Context

This device implements a trench-based silicon MOSFET structure optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate threshold voltage (2.2–3.4 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while its 75–100 nC total gate charge supports efficient PWM operation up to 100 kHz.

The integrated body diode exhibits 50 ns reverse recovery time and 50 nC Q_rr under specified conditions, enabling use in synchronous rectification and freewheeling paths without external diodes. Thermal design leverages direct die-to-case conduction via PG-HSOF-5-2 package with exposed drain pad, achieving 1.00 K/W junction-to-case resistance.

Key Specifications

Pinout & Package

Package: PG-HSOF-5-2 - Thermally enhanced surface-mount package with 5 terminals, exposed drain pad for low-inductance, high-current routing and direct thermal path to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with IAUZ40N04S5N014AUMA1 and IPB180N04S5H5ATMA1, IAUA180N04S5N012AUMA1 delivers optimal balance of ultra-low R_DS(on), compact PG-HSOF-5-2 footprint, and proven under-hood thermal performance - making it preferred for space-constrained, high-current automotive modules requiring minimal conduction loss and high reliability.

Availability

IAUA180N04S5N012AUMA1 is available at Aetrix Electronics and suitable for engine start-stop control, electric power steering, and transmission control modules requiring stable component supply across automotive production lifecycles.

Supply support for IAUA180N04S5N012AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V vehicle electrical systems - emphasizing low R_DS(on), AEC-Q101 compliance, and robust transient handling.

FAQ

What is the maximum allowable gate-source voltage for IAUA180N04S5N012AUMA1?

The absolute maximum V_GS is ±20 V, per the datasheet's "Maximum ratings" table. Operation above +20 V risks irreversible gate oxide damage, while negative gate voltage beyond –20 V may cause parasitic turn-on or latch-up. Recommended drive range is 0 V to 10 V for standard enhancement-mode switching, with 4.7 V gate plateau voltage confirming stable Miller region behavior.

Does IAUA180N04S5N012AUMA1 require an external flyback diode in inductive load circuits?

No - the device integrates a robust body diode rated for 180 A continuous forward current and 720 A pulsed current, with 50 ns reverse recovery time and 50 nC Q_rr. This eliminates need for external diodes in typical automotive solenoid, motor, and relay drive applications, provided layout minimizes stray inductance and thermal management meets R_thJC = 1.00 K/W requirements.

How does the PG-HSOF-5-2 package improve thermal performance over standard SO-8?

PG-HSOF-5-2 uses an exposed drain pad directly soldered to large PCB copper areas, achieving 1.00 K/W junction-to-case thermal resistance - nearly 3× better than SO-8's ~3.0 K/W. Its 5-terminal layout also reduces source inductance by distributing current across three parallel source leads, critical for minimizing voltage overshoot during 180 A switching transients in automotive power stages.

Is IAUA180N04S5N012AUMA1 suitable for 48 V mild-hybrid systems?

No - its 40 V V_DS rating provides insufficient margin for 48 V nominal systems, which experience up to 58 V transients per ISO 16750-2. For 48 V applications, Infineon recommends devices like IAIU028N04S5L017 (60 V-rated OptiMOS™ 5) with appropriate avalanche and thermal derating. IAUA180N04S5N012AUMA1 is strictly intended for 12 V architectures.