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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IAUA200N04S5N010ATMA1

Name: IAUA200N04S5N010ATMA1
Brand: Infineon Technologies
SKU: IAUA200N04S5N010ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IAUA200N04S5N010ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 5-PowerSFN

Datasheet:: IAUA200N04S5N010ATMA1.pdf

Description:: MOSFET_(20V 40V)

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Product details

Overview

IAUA200N04S5N010ATMA1 from Infineon is an N-channel enhancement-mode automotive power MOSFET in PG-HSOF-5-1 package, rated for 40 V V_DS, 0.94 mΩ max R_DS(on) at 100 A/10 V, and 200 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature, supports 800 A pulsed drain current, and is 100% avalanche tested for robustness in high-reliability vehicle subsystems including 48 V mild-hybrid DC-DC converters.

For engineers reviewing the IAUA200N04S5N010ATMA1 datasheet, IAUA200N04S5N010ATMA1 pinout, IAUA200N04S5N010ATMA1 application, or IAUA200N04S5N010ATMA1 equivalent, key selection criteria include its 0.90 K/W R_thJC, AEC-Q101 qualification beyond standard requirements, MSL3 reflow compatibility, and integrated body diode with 65 ns t_rr and 80 nC Q_rr.

Technical Context

This OptiMOS™ 5 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current automotive power stages. Its gate threshold voltage (2.2–3.4 V) enables reliable turn-on with standard 5 V or 10 V gate drivers, while the 4.7 V gate plateau voltage supports stable Miller region control during hard-switching.

The MOSFET integrates a fast, soft-recovery body diode with 0.8–1.1 V forward voltage at 100 A and 25 °C, enabling synchronous rectification and freewheeling in bidirectional topologies. Thermal design leverages direct die-to-case conduction via exposed drain pad, achieving 0.90 K/W junction-to-case resistance under defined PCB mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 48 V nominal automotive systems with transient margin.
R_DS(on), max	0.94 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1 W conduction loss at 100 A, critical for thermal management in compact power modules.
I_D, cont	200 A at T_C = 25 °C - Chip-limited current rating supporting high-power traction inverters and DC-DC stages without derating.
E_AS	200 mJ single-pulse avalanche energy - Confirmed ruggedness against inductive switching stress without external snubbers.
t_r/t_f	6 ns / 12 ns - Fast switching transitions reduce switching losses in >100 kHz PWM applications like on-board chargers.
Q_g	99–132 nC - Gate charge optimized for low driver power consumption while maintaining robust dv/dt immunity.
T_j max	175 °C - Extended operating range for under-hood placement near engines or transmissions.

Pinout & Package

PG-HSOF-5-1 is a thermally enhanced 5-pin surface-mount package with exposed drain pad on bottom for low-inductance, high-current routing and efficient heat transfer to PCB copper. The package complies with MSL3 per J-STD-020 and supports peak reflow up to 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to ground or low-side switch node; carries full load current with minimal parasitic inductance.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <132 nC total charge; sensitive to ESD and layout-induced ringing.
Pin 3 (Drain)	Main power output	Exposed metal pad on underside - primary thermal and current path; must be soldered to ≥6 cm² copper area.
Pin 4 (Source)	Source terminal (redundant)	Second source connection to reduce bond-wire inductance and improve current sharing in parallel configurations.
Pin 5 (Source)	Source terminal (redundant)	Third source connection enhancing low-inductance return path for high-di/dt operation in motor drives.

Key Features

Feature	Design Value
AEC-Q101 qualified beyond standard	Extended reliability testing ensures >15-year lifetime in harsh automotive environments including vibration, thermal cycling, and humidity.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 200 mJ, eliminating field failure risk from unclamped inductive energy.
Optimized body diode	65 ns t_rr and 80 nC Q_rr enable zero-voltage switching (ZVS) in resonant topologies without external diodes.
0.90 K/W R_thJC	Direct die-to-case thermal path allows 200 A operation with only 180 K temperature rise above case, simplifying heatsink design.
Green product (RoHS)	Lead-free and halogen-free construction meets global automotive environmental compliance requirements including ELV and REACH.

Applications

48 V Mild-Hybrid DC-DC Converter

Automotive Traction Inverter Half-Bridge

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in start-stop and regenerative braking systems.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 200–300 kHz with 100 A RMS current.

Use Value: 0.94 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 2 mΩ devices, improving system efficiency from 92% to 94.5%.

Use Scenario: Low-side switching in 3-phase inverter driving PMSM motors for electric power steering (EPS) and e-axles.

IC Role / Device Role / Timing Role: Power switch in hard-switched half-bridge with 200 A peak phase current and 10 kHz PWM frequency.

Use Value: 175 °C T_j max and 0.90 K/W R_thJC allow operation at 155 °C case temperature without derating, reducing cooling volume by 30%.

On-Board Charger (OBC) Primary Switch

Automotive DC Fast Charging Module

Use Scenario: Primary-side switch in LLC resonant converter converting AC grid to 400 V DC bus for EV battery charging.

IC Role / Device Role / Timing Role: High-frequency (500 kHz) switching element with 200 A pulsed current capability and fast body diode recovery.

Use Value: 65 ns t_rr and soft recovery minimize voltage overshoot and EMI, enabling compliance with CISPR 25 Class 5 without added filtering.

Use Scenario: Output stage switch in 800 V/350 kW modular DC fast charger power stack.

IC Role / Device Role / Timing Role: Parallel-configured low-side switch handling 800 A pulsed current with synchronized gate drive.

Use Value: Triple-source pin layout reduces common-source inductance by 60%, suppressing shoot-through risk during 100 ns dead-time intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IAUZ400N04S5N010ATMA1	Same OptiMOS™ 5 platform, 40 V, but 0.47 mΩ R_DS(on) at 100 A - 50% lower on-resistance due to larger die size.	Higher current density requires larger PCB copper area and stricter thermal management; not drop-in for existing layouts.	Select when peak efficiency >96% is required and board space allows increased thermal footprint.
IPB180N04S4-02	Legacy OptiMOS™ 4 device, 40 V, 1.8 mΩ R_DS(on) - higher conduction loss and 150 °C T_j max.	Lower thermal capability limits use to ambient ≤105 °C; unsuitable for under-hood traction inverters.	Choose only for cost-sensitive legacy designs where 175 °C operation and 0.94 mΩ performance are not mandatory.

Compared with IAUZ400N04S5N010ATMA1 and IPB180N04S4-02, IAUA200N04S5N010ATMA1 delivers optimal balance of conduction loss, thermal headroom, and PCB integration-enabling 200 A operation in compact 48 V systems without over-engineering thermal design or sacrificing AEC-Q101 robustness.

Availability

IAUA200N04S5N010ATMA1 is available at Aetrix Electronics and suitable for 48 V mild-hybrid DC-DC converters, automotive traction inverters, and on-board chargers requiring stable component supply across multi-year vehicle production cycles.

Supply support for IAUA200N04S5N010ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in 12 V–48 V vehicle electrical architectures including ADAS, electrified powertrains, and energy recovery systems.

FAQ

What is the maximum allowable gate-source voltage for IAUA200N04S5N010ATMA1?

The absolute maximum V_GS is ±20 V per datasheet Rev. 1.4. Operation above +10 V provides no significant R_DS(on) improvement but increases gate oxide stress and leakage. Recommended drive is +10 V for full enhancement and -5 V to -10 V for fast, controlled turn-off with minimized Miller-induced false triggering.

Does IAUA200N04S5N010ATMA1 require external gate resistors in automotive applications?

Yes - a 3.5 Ω gate resistor is specified in the datasheet for switching characterization (t_d(on), t_r, etc.). In production, gate resistance must be selected based on layout parasitics and EMI targets; typical values range from 2.2 Ω to 10 Ω to balance switching speed, dv/dt control, and gate driver thermal load.

How is the PG-HSOF-5-1 package mounted to ensure thermal performance?

Mounting requires full-solder coverage of the exposed drain pad to ≥6 cm² of 70 µm thick copper on FR4 PCB, with vertical orientation in still air. Thermal vias under the pad (≥12×0.3 mm diameter) are recommended to enhance conduction to inner layers or heatsinks, ensuring R_thJC remains ≤0.90 K/W.

Can IAUA200N04S5N010ATMA1 be paralleled with identical units?

Yes - the triple-source pin configuration minimizes common-source inductance, and matching R_DS(on) tolerance (±15%) and threshold voltage (2.2–3.4 V) enable stable current sharing. Use individual gate resistors and Kelvin source connections to avoid imbalance; derate total current by 10% for thermal margin in parallel operation.

IAUA200N04S5N010ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 5-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 132 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-5-1

IAUA200N04S5N010ATMA1 FAQ

1.How can I place an order for IAUA200N04S5N010ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IAUA200N04S5N010ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IAUA200N04S5N010ATMA1 reliable?

The price and inventory of IAUA200N04S5N010ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IAUA200N04S5N010ATMA1 is usually 5 days.

3.What payment methods are accepted for IAUA200N04S5N010ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IAUA200N04S5N010ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IAUA200N04S5N010ATMA1?

IAUA200N04S5N010ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IAUA200N04S5N010ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IAUA200N04S5N010ATMA1?

For technical support, including IAUA200N04S5N010ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IAUA200N04S5N010ATMA1 requirements.

6.How does Aetrix verify that IAUA200N04S5N010ATMA1 is sourced from the original manufacturer or authorized distributors?

All IAUA200N04S5N010ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IAUA200N04S5N010ATMA1 meets industry standards.

7.What is the process for return or replacement of IAUA200N04S5N010ATMA1?

All IAUA200N04S5N010ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IAUA200N04S5N010ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IAUA200N04S5N010ATMA1 part is unused and in its original packaging.

Return procedure for IAUA200N04S5N010ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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